MOSFET (N-Channel)

IPP037N08N3GXKSA1 is a Infineon N-channel MOSFET for industrial electronics and embedded systems. Key specs include 80 V, 3 pins, and TO-220AB. From quoted pricing with in stock worldwide shipping support.

IRFB3006GPBF from Infineon is a mosfet (n-channel) for industrial, consumer, and embedded electronic assemblies. Key specs include 3 pins, 175°C maximum, and Transistor Outline, Vertical. RFQ sourcing supports in-stock checks and worldwide shipping.

IPB017N06N3 G is a Infineon mosfet (n-channel) component for mosfet (n-channel) designs. It supports 60V in a supplier-specified package. Request inquiry pricing with worldwide shipping support for production or replacement sourcing.

Supertex VN0104N3-G is a 40 V, 0.35 A N-channel enhancement-mode vertical DMOS FET with 3 ohm on-resistance in TO-92-3 package. Features a built-in body diode and 8 pF feedback capacitance for switching and signal-routing applications. Available from authorized distributors with worldwide shipping.

MOSFET, N-CH, 600V, 30A, TO-3PF; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Vishay SQ1912AEEH-T1_GE3 is a dual N-channel MOSFET in SOT-363 (SC-70 6-pin) package with 20 V breakdown voltage, 0.8 A maximum drain current, and 0.28 Ω on-resistance. Features two independent elements with built-in diodes for compact high-efficiency switching circuits. Available in reel format with worldwide shipping.

Infineon IRLHS6342TRPBF is an N-channel MOSFET with 30 V breakdown voltage, 8.7 A drain current, and 19.5 mΩ on-resistance in a compact S-PDSO-N6 package with built-in diode. Ideal for high-efficiency switching in portable power designs. Available from stock with worldwide shipping.

BUK9222-55A,118 is a 0A 55V resistor by Nexperia. Key specs: 0A, 55V, 48A. From quote-based pricing, in stock with worldwide shipping for production sourcing for production BOM sourcing.

Infineon IRF7343TRPBF is a dual MOSFET in an SO-8 package featuring one N-channel and one P-channel device, each rated at 55 V and 4.7 A with 50 mΩ maximum Rds(on). Avalanche-rated with ultra-low resistance for high-efficiency switching in compact designs. Available from authorized distributors with worldwide shipping.

The SPA07N60C3 is an N-channel CoolMOS power MOSFET from Infineon rated at 600 V breakdown voltage and 7.3 A drain current with 0.6 Ω on-resistance. It is avalanche rated with an isolated TO package, available in stock with worldwide shipping.

IRF7309TRPBF is a dual N-channel MOSFET from Infineon in an 8-pin SOIC-8 package, rated at 30 V drain-source breakdown voltage and 4 A drain current per element with an ultra-low 50 mΩ on-resistance. Two independent MOSFETs with built-in body diodes share one compact SMT package. Available on tape-and-reel with worldwide shipping.

Use the download button to access the DMC3400SDW-13 schematic symbol, PCB footprint, and 3D model.

Infineon IRFZ48VPBF is an N-channel power MOSFET rated at 60 V and 72 A in a TO-220 vertical package with matte tin terminal finish. Features low on-resistance suitable for motor control and power switching applications. Available from authorized distributors with worldwide shipping.

SC-70, 3 PIN

The IRFR3708TRPBF is an N-Channel HEXFET Power MOSFET with 30 V drain-source voltage, 30 A continuous drain current, and 12.5 mΩ on-resistance. It features fast switching and low gate charge of 24 nC, making it ideal for DC-DC converters, motor drives, and load switching applications.

The IPP180N10N3GXKSA1 is an Infineon N-channel MOSFET in TO-220 package rated at 100 V and 43 A with ultra-low 18 mΩ on-resistance, suited for power conversion and motor drive circuits. It features a built-in body diode and 50 mJ avalanche energy rating for robust switching reliability. Available from stock with worldwide shipping.

The Nexperia PSMN7R0-30YL,115 is a high-efficiency N-channel MOSFET with 30 V breakdown voltage, 65 A drain current, and ultra-low 11.3 mΩ on-resistance in a compact SOT669 package. Ideal for synchronous rectification and motor drive applications. Available in stock with worldwide shipping.

The Nexperia PSMN4R8-100BSE is an N-channel power MOSFET rated at 100 V and 120 A continuous drain current in a D2PAK package. It delivers an ultra-low RDS(on) of 4.8 mΩ maximum with an integrated body diode for robust switching performance. Available from authorized distributors worldwide with competitive pricing.

INFINEON - BTS4141NHUMA1 - Smart Power Switch, SIPMOS Technology, High Side, 1 Output, 1.1A, SOT-223-4

MOSFET DUAL N-CH 60V 11.5 LOGIC LEVEL

Infineon IRLR8256PBF is a 25V N-channel power MOSFET with 81A continuous drain current and ultra-low 5.7mΩ on-resistance in a TO-252AA (DPAK) package. It includes an integrated body diode and 86mJ avalanche energy rating for robust unclamped inductive switching. Suited for synchronous buck converters, motor drives, and high-current load switching in automotive and industrial power systems.

Infineon IPB048N15N5ATMA1 is a 150 V, 120 A N-channel power MOSFET with an ultra-low 4.8 mΩ Rds(on), built-in body diode, and 230 mJ avalanche energy rating in a TO-263 (D2PAK) package, optimized for high-efficiency motor drives and DC-DC power conversion.

International Rectifier IRFL4315TRPBF is an N-channel MOSFET in a 4-pin SOT-223 package rated 150 V and 2.6 A with 0.185 Ω on-resistance, built-in drain diode, and 38 mJ avalanche energy rating for reliable switching power applications.

Vishay SQA410EJ-T1_GE3 is an N-channel MOSFET rated at 20 V and 7.8 A in a compact surface-mount PowerPAK SC-70-6 package. Features 28 mΩ maximum drain-source on-resistance and 5 mJ avalanche energy rating. Available in stock with worldwide shipping.

Vishay SQD23N06-31L_GE3 is an AEC-Q101 qualified N-channel trench MOSFET rated at 60 V, 23 A drain current, and 100 W power dissipation with 31 mΩ on-resistance. Built-in body diode and 20 mJ avalanche energy rating enhance robustness in automotive and industrial switching circuits. Available globally with competitive pricing.

JFET N-Ch Junction FET 10mA -50V VGDS

SCT060HU75G3AG is an automotive-grade silicon carbide N-channel power MOSFET from STMicroelectronics rated at 750V, 30A with 58 mΩ typical on-resistance, housed in an HU3PAK package with built-in diode.

N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

STW47N60DM6AG from STMicroelectronics is a mosfet (n-channel) for automotive modules and distributed power rails. Key specs include 3 pins, 6A, and Transistor Outline, Vertical. RFQ sourcing supports in-stock checks and worldwide shipping.

STMicroelectronics STP78N75F4 is a single N-channel power MOSFET rated at 75 V and 78 A drain current with an ultra-low RDS(on) of 11 milliohms in a TO-220AB package. It includes a built-in freewheeling diode and 185 mJ avalanche energy rating for robust motor drive and power switching applications. Available from authorized distributors with worldwide shipping.

STL50N3LLH5 from STMicroelectronics is a power-management IC for industrial and automotive power-supply designs. Key specs include 8 pins, 30 V, and manufacturer package geometry. RFQ sourcing supports in-stock checks and worldwide shipping.

STMicroelectronics SCTH100N120G2-AG is an automotive-grade N-channel silicon carbide (SiC) MOSFET rated at 1200 V and 100 A, housed in a high-power package, delivering ultra-low RDS(on) for high-efficiency power switching in EV inverters and industrial converters. AEC-Q101 qualified for automotive reliability requirements. Available from stock with worldwide shipping.

Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

STMicroelectronics SCTWA70N120G2V is a MOSFET (N-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 1200 V, 91 A in 3-pin package. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C)

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

TYPICAL RDS(on) = 0.073Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

The STB15810 is an N-channel power MOSFET from STMicroelectronics featuring ultra-low 3.4 mΩ (typ.) on-resistance, 100 V drain-source breakdown voltage, and 110 A drain current in the D2PAK through-hole-compatible package. Its STripFET F7 split-gate trench technology minimizes conduction and switching losses. Available in stock with worldwide shipping.

Automotive-grade N-channel 650 V, 89 mOhm typ., 32 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

N-channel 900 V, 0.72 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a TO-247 package

• Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected

Use the download button to access the SCT020H120G3AG schematic symbol, PCB footprint, and 3D model.

STW8NK80Z is an N-channel power MOSFET rated at 800 V drain-source breakdown and 6.2 A continuous drain current with 1.5 Ω on-resistance. It includes a built-in body diode and 300 mJ avalanche energy rating for rugged high-voltage switching. Available from STMicroelectronics in a TO-247 package with worldwide shipping.

STMicroelectronics STD65N160M9 is an N-channel power MOSFET rated at 1600V with 65A continuous drain current and low on-resistance for high-voltage switching applications. Designed for industrial inverters, solar converters, and motor drives. Available from stock with worldwide shipping.

STMicroelectronics STD40NF3LL is an N-channel 30 V, 40 A STripFET H7 Power MOSFET with 2.8 mΩ typical RDS(on) and integrated Schottky diode in a DPAK package. Logic-level gate drive and 850 mJ avalanche energy rating ensure robust motor control performance. Available from global distributors with worldwide shipping.

STRH100N6HYT is a radiation-hardened N-channel Power MOSFET from STMicroelectronics rated at 60 V and 40 A with 24 mΩ on-resistance. Designed for space and high-reliability applications, it features fast switching, avalanche energy rating of 954 mJ, and a built-in diode. Available in TO-254AA package for demanding aerospace and satellite power management designs.

STRH100N6HY1 is a radiation-hardened N-channel power MOSFET from STMicroelectronics rated at 60V drain-source breakdown and 40A maximum drain current. It features 24mΩ maximum on-resistance, 954mJ avalanche energy rating, and fast-switching operation in a TO-254AA package for space and hi-rel power applications.