IRLHS6342TRPBF Infineon MOSFET (N-Channel) (Other) In Stock
Infineon IRLHS6342TRPBF is an N-channel MOSFET with 30 V breakdown voltage, 8.7 A drain current, and 19.5 mΩ on-resistance in a compact S-PDSO-N6 package with built-in diode. Ideal for high-efficiency switching in portable power designs. Available from stock with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Other
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- IRLHS6342TRPBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- N-channel MOSFET with 30 V VDS breakdown and ultra-low 19.5 mΩ RDS(on) at 4.5 V gate drive enabling high-efficiency DC-DC conversion in portable battery-powered designs
- 8.7 A continuous drain current with 14 mJ avalanche energy rating (Eas) in a compact S-PDSO-N6 (6-pin) package supporting robust load switching without heatsinking
- Single configuration with built-in body diode and 70 pF feedback capacitance (Crss) minimizing switching losses and external component count in synchronous buck or H-bridge circuits
Applications
The IRLHS6342TRPBF is designed for synchronous buck converters, load switches, and motor drive circuits in battery-powered IoT devices, smartphones, and wearables where 30 V blocking and 8.7 A current capability must fit in a compact 6-pin SMT package. Its 19.5 mΩ RDS(on) and low gate charge reduce conduction and switching losses in high-frequency converters operating above 1 MHz, making it effective for USB power delivery and LED driver applications.
Specifications
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 14mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 8.7A |
| Drain-source On Resistance-Max | 0.0195Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 70pF |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.1W |
| Pulsed Drain Current-Max (IDM) | 76A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
At what gate voltage does the IRLHS6342TRPBF achieve its rated 19.5 mΩ RDS(on), and how does this affect 3.3 V logic-level drive compatibility?
The IRLHS6342TRPBF achieves its maximum rated RDS(on) of 19.5 mΩ at a gate-to-source voltage of 4.5 V, which is fully compatible with 5 V gate drivers but requires a charge pump or dedicated gate driver to reach full enhancement from a 3.3 V logic rail. At 3.3 V VGS the on-resistance increases above 19.5 mΩ, raising conduction loss in the 8.7 A drain current path, so direct 3.3 V logic-level drive is not recommended for full-load efficiency.
How does the 14 mJ avalanche energy rating of the IRLHS6342TRPBF protect against inductive load transients in motor drive circuits?
The 14 mJ avalanche energy rating (Eas) means the IRLHS6342TRPBF can safely absorb up to 14 mJ of energy when the drain voltage exceeds the 30 V breakdown during inductive flyback, protecting the circuit from overvoltage spikes without requiring an external snubber. In small brushed DC motor drives switching at voltages up to 24 V, this built-in avalanche capability provides a first layer of protection for transients that would otherwise destroy a MOSFET with no rated Eas.
For a compact 2-phase synchronous buck converter, what advantage does the S-PDSO-N6 package of the IRLHS6342TRPBF offer over a larger D2PAK MOSFET?
The S-PDSO-N6 (6-pin WSON-like) package of the IRLHS6342TRPBF measures approximately 2.0 mm x 2.0 mm, occupying less than 10% of the PCB footprint required by a D2PAK device at similar 30 V and 8.7 A ratings. This allows two IRLHS6342TRPBF devices for a 2-phase buck converter to fit in the space of a single D2PAK, enabling high switching frequency above 1 MHz with reduced parasitic inductance and improved thermal performance through PCB copper spreading.
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