VN0104N3-G Supertex MOSFET (N-Channel) (Other) In Stock
Supertex VN0104N3-G is a 40 V, 0.35 A N-channel enhancement-mode vertical DMOS FET with 3 ohm on-resistance in TO-92-3 package. Features a built-in body diode and 8 pF feedback capacitance for switching and signal-routing applications. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Supertex
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VN0104N3-G Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.3636(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of VN0104N3-G?
- 40 V drain-source breakdown voltage with 0.35 A maximum drain current for low-power switching
- 3 ohm maximum drain-source on-resistance (RDS(on)) enables efficient low-current load switching
- Built-in body diode supports inductive load protection in switching circuit designs
- Low 8 pF feedback capacitance (Crss) for fast switching response in small-signal applications
- Compact TO-92-3 package suitable for through-hole PCB designs with minimal board footprint
What is VN0104N3-G used for?
The VN0104N3-G is designed for low-power switching applications such as LED drivers, relay driver circuits, and low-side load switches in consumer and industrial electronics. Its 40 V rating and 3 ohm on-resistance make it a practical choice for battery-powered circuits, signal multiplexers, and analog switching functions where compact TO-92 packaging and small drain currents up to 0.35 A are suitable. The built-in diode also enables use in motor control and solenoid driver circuits requiring inductive flyback protection.
What are the specifications of VN0104N3-G?
| Manufacturer Package Code | TO-92-3 |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40V |
| Drain Current-Max (ID) | 0.35A |
| Drain-source On Resistance-Max | 3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Where can I find the VN0104N3-G datasheet?
VN0104N3-G Datasheet DownloadOfficial datasheet from Supertex
What are equivalent replacements for VN0104N3-G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of VN0104N3-G that define its safe operating envelope?
VN0104N3-G is rated for a 40 V minimum drain-source breakdown voltage and a maximum drain current of 0.35 A. Its maximum drain-source on-resistance is 3 ohm, and it features an 8 pF maximum feedback capacitance. These parameters define the device as a small-signal, low-power N-channel MOSFET well-suited for load switching, LED driving, and logic-level switching functions in circuits with supply voltages up to 40 V.
How does the built-in body diode in VN0104N3-G benefit inductive load switching designs?
The built-in body diode in VN0104N3-G provides a freewheeling current path when an inductive load such as a relay coil or small motor is switched off. Without this diode, the inductive voltage spike at turn-off could exceed the 40 V drain-source breakdown rating, potentially damaging the MOSFET. The integrated body diode clamps this spike and allows the inductor current to recirculate, eliminating the need for an external flyback diode in most low-current inductive switching applications.
For a low-side LED driver circuit at 12 V, is VN0104N3-G a suitable MOSFET choice?
Yes, VN0104N3-G is a suitable choice for a low-side LED driver operating at 12 V. Its 40 V breakdown rating provides comfortable voltage margin above the 12 V rail, and the 0.35 A maximum drain current accommodates typical single or multi-LED strings. The 3 ohm on-resistance produces a voltage drop of approximately 1.05 V at 350 mA, which should be accounted for in LED bias current calculations. The compact TO-92-3 package is ideal for simple through-hole LED driver circuits.
When would an engineer choose VN0104N3-G over a logic-level MOSFET in a microcontroller-driven switching application?
An engineer would choose VN0104N3-G when the gate drive voltage is compatible with its threshold voltage and when the low 0.35 A drain current requirement suits the application. VN0104N3-G is a vertical DMOS enhancement-mode device, meaning it requires a gate-source voltage above its threshold to turn on. In microcontroller-driven circuits where 5 V gate drive is available and load currents stay below 0.35 A, VN0104N3-G offers a simple TO-92 packaged solution without the added cost of a fully logic-level-optimized gate threshold.
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Why Buy from FindMyChip
About Supertex
Supertex is a leading electronic component manufacturer. FindMyChip sources Supertex ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from Supertex
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3998 | $0.40 |
| 4000+ | $0.3797 | $1519.00 |
| 8000+ | $0.3704 | $2962.96 |
| 16000+ | $0.3636 | $5818.24 |
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