IRF7309TRPBF Infineon MOSFET (N-Channel) (Small Outline Packages) In Stock

IRF7309TRPBF is a dual N-channel MOSFET from Infineon in an 8-pin SOIC-8 package, rated at 30 V drain-source breakdown voltage and 4 A drain current per element with an ultra-low 50 mΩ on-resistance. Two independent MOSFETs with built-in body diodes share one compact SMT package. Available on tape-and-reel with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
IRF7309TRPBFSmall Outline Packages
Quick Facts
Manufacturer
Infineon
Package
Small Outline Packages
Pin Count
8
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Dual N-channel MOSFET configuration with 2 independent 30 V, 4 A elements in a single 8-pin SOIC-8 package halves board area versus two discrete MOSFETs
  • Ultra-low 50 mΩ (0.05 Ω) drain-source on-resistance minimises conduction losses in synchronous rectification and load-switch applications
  • Built-in body diode on each element enables use in synchronous buck converters and H-bridge motor drivers without external freewheeling diodes
  • Infineon ultra-low-resistance MOSFET technology delivers high efficiency at 4 A loads in battery-powered and portable designs

Applications

The IRF7309TRPBF is widely used in synchronous buck DC-DC converters, dual-channel load switches, and H-bridge motor drivers operating from 5 V to 24 V bus rails where two N-channel MOSFETs are needed in a compact 8-pin SOIC footprint. Its ultra-low 50 mΩ on-resistance makes it effective in battery protection circuits for lithium-ion packs, where conduction loss at 4 A charge and discharge currents determines thermal performance and runtime. The dual independent configuration also suits power sequencing circuits in embedded computing boards where two separate supply rails must be enabled in a defined order.

Specifications

YTEOL5.4
Additional FeatureULTRA LOW RESISTANCE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30V
Drain Current-Max (ID)4A
Drain-source On Resistance-Max0.05Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeMS-012AA
JESD-30 CodeR-PDSO-G8
JESD-609 Codee3
Number of Elements2
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)260
Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)1.4W
Pulsed Drain Current-Max (IDM)16A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMatte Tin (Sn)
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)30
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageSmall Outline Packages

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
HTS Code8541.29.00.95

Datasheet

IRF7309TRPBF Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the drain-source voltage and drain current ratings of the IRF7309TRPBF, and how many MOSFET elements does it contain?

The IRF7309TRPBF contains 2 independent N-channel MOSFET elements, each rated at 30 V drain-source breakdown voltage and 4 A maximum drain current. The dual configuration in a single 8-pin SOIC-8 package provides the equivalent of two discrete MOSFETs while occupying roughly half the PCB area, a decisive advantage in compact battery-management and load-switch designs.

How does the 50 mΩ on-resistance of the IRF7309TRPBF affect power loss in a 3 A synchronous buck converter?

At 3 A drain current, a 50 mΩ on-resistance produces a conduction power loss of I² × R = 9 A² × 0.05 Ω = 0.45 W per MOSFET element. This is significantly lower than typical 100 mΩ to 200 mΩ MOSFETs in the same voltage class, reducing self-heating in the 8-pin SOIC-8 package and improving converter efficiency by 1% to 3% at moderate loads.

Can the built-in body diode in the IRF7309TRPBF replace external freewheeling diodes in a dual-channel H-bridge motor driver?

Yes. Each of the 2 N-channel elements in the IRF7309TRPBF includes an integral body diode that conducts reverse current during MOSFET off-time, eliminating the need for external Schottky freewheeling diodes in most H-bridge motor driver designs. For a small DC motor drawing up to 3 A, the body diode's continuous current rating is sufficient to handle the freewheeling current during each switching cycle at frequencies up to several hundred kHz.

When should a designer choose the IRF7309TRPBF over a single discrete 30 V N-channel MOSFET for a lithium-ion battery protection circuit?

Lithium-ion battery protection requires separate N-channel MOSFETs for charge and discharge path switching, making a dual-element part like the IRF7309TRPBF the natural fit. The two 4 A, 30 V elements in a single SOIC-8 package cut BOM count from 2 ICs to 1, reduce soldering defect risk, and shrink the PCB footprint by approximately 50%, which is critical in slim wearable or compact power bank form factors where PCB space is the binding constraint.

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About Infineon

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AvailabilityIn Stock
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Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

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Marco Rossi
CTO, AutoDrive Systems, Italy