IRF7309TRPBF Infineon MOSFET (N-Channel) (Small Outline Packages) In Stock
IRF7309TRPBF is a dual N-channel MOSFET from Infineon in an 8-pin SOIC-8 package, rated at 30 V drain-source breakdown voltage and 4 A drain current per element with an ultra-low 50 mΩ on-resistance. Two independent MOSFETs with built-in body diodes share one compact SMT package. Available on tape-and-reel with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- IRF7309TRPBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Dual N-channel MOSFET configuration with 2 independent 30 V, 4 A elements in a single 8-pin SOIC-8 package halves board area versus two discrete MOSFETs
- Ultra-low 50 mΩ (0.05 Ω) drain-source on-resistance minimises conduction losses in synchronous rectification and load-switch applications
- Built-in body diode on each element enables use in synchronous buck converters and H-bridge motor drivers without external freewheeling diodes
- Infineon ultra-low-resistance MOSFET technology delivers high efficiency at 4 A loads in battery-powered and portable designs
Applications
The IRF7309TRPBF is widely used in synchronous buck DC-DC converters, dual-channel load switches, and H-bridge motor drivers operating from 5 V to 24 V bus rails where two N-channel MOSFETs are needed in a compact 8-pin SOIC footprint. Its ultra-low 50 mΩ on-resistance makes it effective in battery protection circuits for lithium-ion packs, where conduction loss at 4 A charge and discharge currents determines thermal performance and runtime. The dual independent configuration also suits power sequencing circuits in embedded computing boards where two separate supply rails must be enabled in a defined order.
Specifications
| YTEOL | 5.4 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 0.05Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.4W |
| Pulsed Drain Current-Max (IDM) | 16A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the drain-source voltage and drain current ratings of the IRF7309TRPBF, and how many MOSFET elements does it contain?
The IRF7309TRPBF contains 2 independent N-channel MOSFET elements, each rated at 30 V drain-source breakdown voltage and 4 A maximum drain current. The dual configuration in a single 8-pin SOIC-8 package provides the equivalent of two discrete MOSFETs while occupying roughly half the PCB area, a decisive advantage in compact battery-management and load-switch designs.
How does the 50 mΩ on-resistance of the IRF7309TRPBF affect power loss in a 3 A synchronous buck converter?
At 3 A drain current, a 50 mΩ on-resistance produces a conduction power loss of I² × R = 9 A² × 0.05 Ω = 0.45 W per MOSFET element. This is significantly lower than typical 100 mΩ to 200 mΩ MOSFETs in the same voltage class, reducing self-heating in the 8-pin SOIC-8 package and improving converter efficiency by 1% to 3% at moderate loads.
Can the built-in body diode in the IRF7309TRPBF replace external freewheeling diodes in a dual-channel H-bridge motor driver?
Yes. Each of the 2 N-channel elements in the IRF7309TRPBF includes an integral body diode that conducts reverse current during MOSFET off-time, eliminating the need for external Schottky freewheeling diodes in most H-bridge motor driver designs. For a small DC motor drawing up to 3 A, the body diode's continuous current rating is sufficient to handle the freewheeling current during each switching cycle at frequencies up to several hundred kHz.
When should a designer choose the IRF7309TRPBF over a single discrete 30 V N-channel MOSFET for a lithium-ion battery protection circuit?
Lithium-ion battery protection requires separate N-channel MOSFETs for charge and discharge path switching, making a dual-element part like the IRF7309TRPBF the natural fit. The two 4 A, 30 V elements in a single SOIC-8 package cut BOM count from 2 ICs to 1, reduce soldering defect risk, and shrink the PCB footprint by approximately 50%, which is critical in slim wearable or compact power bank form factors where PCB space is the binding constraint.
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