MOSFET (N-Channel)

MOSFET (N-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (N-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.

2,078 components

How to Choose MOSFET (N-Channel) Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All MOSFET (N-Channel) Components

Showing 901–950 of 2,078

STRH100N6HYGSTMicroelectronics

STMicroelectronics STRH100N6HYG is a radiation-hardened N-channel power MOSFET rated at 60 V and 40 A, featuring 24 mΩ on-resistance and 954 mJ avalanche energy rating for space and hi-rel applications. Built-in diode and fast switching make it ideal for satellite power conversion and rad-hard motor drives.

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SCTWA35N65G2VAGSTMicroelectronics

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package

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SCTWA10N120STMicroelectronics

STMicroelectronics SCTWA10N120 is a 1200 V, 10 A N-channel silicon carbide (SiC) MOSFET in a through-hole TO-247 vertical package, optimized for high-efficiency power conversion. Ultra-low switching losses and high-temperature operation up to 175°C make it ideal for industrial inverters and EV charging systems. Available from authorized distributors with worldwide shipping.

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SCT20N170AGSTMicroelectronics

The SCT20N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET from STMicroelectronics rated at 1700 V and 43 A with a 64 mΩ typical on-resistance. Housed in the HiP247 package, it is AEC-Q101 qualified for high-voltage EV powertrain and industrial power conversion applications.

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SCT1000N170AGSTMicroelectronics

SCT1000N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET rated at 1700 V and 7 A with a typical on-resistance of 1.0 Ω. It integrates a built-in diode in a HiP247 through-hole package, optimized for high-efficiency, high-voltage automotive power conversion applications.

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STD11NM65NSTMicroelectronics

DPAK-3/2

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STP35N65DM2STMicroelectronics

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-220 package

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STFU11N65M2STMicroelectronics

STFU11N65M2 is an N-channel 650 V MDmesh M2 power MOSFET from STMicroelectronics in TO-220FP ultra narrow leads package, rated at 7 A with 0.60 Ω typical on-resistance for efficient switching power conversion. Available with worldwide shipping.

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STF22N60M6STMicroelectronics

N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

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STU3N45K3STMicroelectronics

Use the download button to access the STU3N45K3 schematic symbol, PCB footprint, and 3D model.

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STB36NM60NSTMicroelectronics

Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package

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STP13N60DM2STMicroelectronics

STP13N60DM2 is a 3 pins mosfet (n-channel) by STMicroelectronics. Key specs: 3 pins, Transistor Outline, Vertical package, N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package. From quote-based sourcing, in stock checks support worldwide shipping.

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STWA67N60M6STMicroelectronics

N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package

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STF33N60DM6STMicroelectronics

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

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STD11N60M6STMicroelectronics

STD11N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET in a DPAK package, delivering 8 A continuous drain current with 520 mΩ maximum on-resistance. Optimized for high-efficiency power conversion with low switching losses. Suitable for SMPS, PFC stages, and industrial motor drives with worldwide availability.

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STD9N80K5STMicroelectronics

N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package

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STW68N65DM6STMicroelectronics

N-channel 650 V, 51 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package

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STP9N65M2STMicroelectronics

N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

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STU6N60DM2STMicroelectronics

STMicroelectronics STU6N60DM2 is a MOSFET (N-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 600 V, 0.95 Ohm in Transistor Outline, Vertical. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

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STL26N65DM2STMicroelectronics

N-channel 650 V, 0.182 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STD6N60DM2STMicroelectronics

N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK package

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STF12N50DM2STMicroelectronics

STF12N50DM2 is an N-channel power MOSFET from STMicroelectronics rated for 500 V drain-to-source voltage and 12 A continuous drain current. It features matte tin terminal finish for enhanced solderability in a TO-220 vertical package. Available from global distributors with worldwide shipping.

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STWA70N60DM2STMicroelectronics

N-channel 600 V, 37 mΩ typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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STU7N60DM2STMicroelectronics

N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in an IPAK package

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STF26N65DM2STMicroelectronics

N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package

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STI33N60M6STMicroelectronics

N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in an I2PAK package

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STWA63N65DM2STMicroelectronics

N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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STD7N60DM2STMicroelectronics

N-channel 600 V, 0.78 Ω typ., 6 A MDmesh™ DM2 Power MOSFET in a DPAK package

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STB12N60DM2AGSTMicroelectronics

Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

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STF6N60DM2STMicroelectronics

N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a TO-220FP package

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STWA35N65DM2STMicroelectronics

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

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STL19N60M6STMicroelectronics

N-channel 600 V, 255 mOhm typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

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STW63N65DM2STMicroelectronics

Use the download button to access the STW63N65DM2 schematic symbol, PCB footprint, and 3D model.

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STWA72N60DM2AGSTMicroelectronics

Use the download button to access the STWA72N60DM2AG schematic symbol, PCB footprint, and 3D model.

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STD9N60M6STMicroelectronics

N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

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STFH10N60M6STMicroelectronics

N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide crepage package

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STP18N60M6STMicroelectronics

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220 package

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STD3N65M6STMicroelectronics

N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package

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STB33N60M6STMicroelectronics

N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a D²PAK package

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STD5N65M6STMicroelectronics

STMicroelectronics STD5N65M6 is an N-channel 650V superjunction MDmesh M6 Power MOSFET rated at 4A with a 1.15Ω typical on-resistance in a compact DPAK (TO-252) package. From $0.80 in stock, worldwide shipping available.

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STD12N60M6STMicroelectronics

N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

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STWA48N60M6STMicroelectronics

N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 long leads package

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STD7N60M6STMicroelectronics

N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

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STU7N65M6STMicroelectronics

N-channel 650 V, 0.91 Ohm typ., 5 A MDmesh M6 Power MOSFET in an IPAK package

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STD13N60M6STMicroelectronics

N-channel 600 V, 320 mΩ typ., 10 A, MDmesh M6 Power MOSFET in a DPAK package

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STL24N60M6STMicroelectronics

N-channel 600 V, 0.175 Ω typ., 15 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STL18N60M6STMicroelectronics

STMicroelectronics STL18N60M6 is an N-channel MDmesh M6 power MOSFET rated at 600 V and 9 A with a typical RDS(on) of 255 mΩ in a compact PowerFLAT 5x6 HV surface-mount package. Optimized for high-efficiency switching in PFC stages and LLC resonant converters, it delivers superior figure-of-merit performance at high frequencies.

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STP9NK65ZFPSTMicroelectronics

N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET

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STL17N60M6STMicroelectronics

N-channel 600 V, 300 mΩ typ., 10 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

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STB46N60M6STMicroelectronics

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a D²PAK package

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