MOSFET (N-Channel)

MOSFET (N-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (N-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.

2,078 components

How to Choose MOSFET (N-Channel) Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All MOSFET (N-Channel) Components

Showing 901950 of 2,078

STRH100N6HYGSTMicroelectronics

STMicroelectronics STRH100N6HYG is a radiation-hardened N-channel power MOSFET rated at 60 V and 40 A, featuring 24 mΩ on-resistance and 954 mJ avalanche energy rating for space and hi-rel applications. Built-in diode and fast switching make it ideal for satellite power conversion and rad-hard motor drives.

SCTWA35N65G2VAGSTMicroelectronics

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package

SCTWA10N120STMicroelectronics

STMicroelectronics SCTWA10N120 is a 1200 V, 10 A N-channel silicon carbide (SiC) MOSFET in a through-hole TO-247 vertical package, optimized for high-efficiency power conversion. Ultra-low switching losses and high-temperature operation up to 175°C make it ideal for industrial inverters and EV charging systems. Available from authorized distributors with worldwide shipping.

SCT20N170AGSTMicroelectronics

The SCT20N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET from STMicroelectronics rated at 1700 V and 43 A with a 64 mΩ typical on-resistance. Housed in the HiP247 package, it is AEC-Q101 qualified for high-voltage EV powertrain and industrial power conversion applications.

SCT1000N170AGSTMicroelectronics

SCT1000N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET rated at 1700 V and 7 A with a typical on-resistance of 1.0 Ω. It integrates a built-in diode in a HiP247 through-hole package, optimized for high-efficiency, high-voltage automotive power conversion applications.

STD11NM65NSTMicroelectronics

DPAK-3/2

STP35N65DM2STMicroelectronics

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-220 package

STFU11N65M2STMicroelectronics

STFU11N65M2 is an N-channel 650 V MDmesh M2 power MOSFET from STMicroelectronics in TO-220FP ultra narrow leads package, rated at 7 A with 0.60 Ω typical on-resistance for efficient switching power conversion. Available with worldwide shipping.

STF22N60M6STMicroelectronics

N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

STU3N45K3STMicroelectronics

Use the download button to access the STU3N45K3 schematic symbol, PCB footprint, and 3D model.

STB36NM60NSTMicroelectronics

Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package

STP13N60DM2STMicroelectronics

STP13N60DM2 is a 3 pins mosfet (n-channel) by STMicroelectronics. Key specs: 3 pins, Transistor Outline, Vertical package, N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package. From quote-based sourcing, in stock checks support worldwide shipping.

STWA67N60M6STMicroelectronics

N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package

STF33N60DM6STMicroelectronics

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

STD11N60M6STMicroelectronics

STD11N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET in a DPAK package, delivering 8 A continuous drain current with 520 mΩ maximum on-resistance. Optimized for high-efficiency power conversion with low switching losses. Suitable for SMPS, PFC stages, and industrial motor drives with worldwide availability.

STD9N80K5STMicroelectronics

N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package

STW68N65DM6STMicroelectronics

N-channel 650 V, 51 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package

STP9N65M2STMicroelectronics

N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STU6N60DM2STMicroelectronics

STMicroelectronics STU6N60DM2 is a MOSFET (N-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 600 V, 0.95 Ohm in Transistor Outline, Vertical. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

STL26N65DM2STMicroelectronics

N-channel 650 V, 0.182 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

STD6N60DM2STMicroelectronics

N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK package

STF12N50DM2STMicroelectronics

STF12N50DM2 is an N-channel power MOSFET from STMicroelectronics rated for 500 V drain-to-source voltage and 12 A continuous drain current. It features matte tin terminal finish for enhanced solderability in a TO-220 vertical package. Available from global distributors with worldwide shipping.

STWA70N60DM2STMicroelectronics

N-channel 600 V, 37 mΩ typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

STU7N60DM2STMicroelectronics

N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in an IPAK package

STF26N65DM2STMicroelectronics

N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package

STI33N60M6STMicroelectronics

N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in an I2PAK package

STWA63N65DM2STMicroelectronics

N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

STD7N60DM2STMicroelectronics

N-channel 600 V, 0.78 Ω typ., 6 A MDmesh™ DM2 Power MOSFET in a DPAK package

STB12N60DM2AGSTMicroelectronics

Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

STF6N60DM2STMicroelectronics

N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a TO-220FP package

STWA35N65DM2STMicroelectronics

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

STL19N60M6STMicroelectronics

N-channel 600 V, 255 mOhm typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

STW63N65DM2STMicroelectronics

Use the download button to access the STW63N65DM2 schematic symbol, PCB footprint, and 3D model.

STWA72N60DM2AGSTMicroelectronics

Use the download button to access the STWA72N60DM2AG schematic symbol, PCB footprint, and 3D model.

STD9N60M6STMicroelectronics

N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

STFH10N60M6STMicroelectronics

N-channel 600 V, 520 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide crepage package

STP18N60M6STMicroelectronics

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a TO-220 package

STD3N65M6STMicroelectronics

N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package

STB33N60M6STMicroelectronics

N-channel 600 V, 105 mΩ typ., 25 A, MDmesh M6 Power MOSFET in a D²PAK package

STD5N65M6STMicroelectronics

STMicroelectronics STD5N65M6 is an N-channel 650V superjunction MDmesh M6 Power MOSFET rated at 4A with a 1.15Ω typical on-resistance in a compact DPAK (TO-252) package. From $0.80 in stock, worldwide shipping available.

STD12N60M6STMicroelectronics

N-channel 600 V, 0.29 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

STWA48N60M6STMicroelectronics

N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 long leads package

STD7N60M6STMicroelectronics

N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

STU7N65M6STMicroelectronics

N-channel 650 V, 0.91 Ohm typ., 5 A MDmesh M6 Power MOSFET in an IPAK package

STD13N60M6STMicroelectronics

N-channel 600 V, 320 mΩ typ., 10 A, MDmesh M6 Power MOSFET in a DPAK package

STL24N60M6STMicroelectronics

N-channel 600 V, 0.175 Ω typ., 15 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

STL18N60M6STMicroelectronics

STMicroelectronics STL18N60M6 is an N-channel MDmesh M6 power MOSFET rated at 600 V and 9 A with a typical RDS(on) of 255 mΩ in a compact PowerFLAT 5x6 HV surface-mount package. Optimized for high-efficiency switching in PFC stages and LLC resonant converters, it delivers superior figure-of-merit performance at high frequencies.

STP9NK65ZFPSTMicroelectronics

N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET

STL17N60M6STMicroelectronics

N-channel 600 V, 300 mΩ typ., 10 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package

STB46N60M6STMicroelectronics

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a D²PAK package

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