STW8NK80Z STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STW8NK80Z is an N-channel power MOSFET rated at 800 V drain-source breakdown and 6.2 A continuous drain current with 1.5 Ω on-resistance. It includes a built-in body diode and 300 mJ avalanche energy rating for rugged high-voltage switching. Available from STMicroelectronics in a TO-247 package with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STW8NK80Z Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.4100(MOQ 1)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 800 V drain-source breakdown voltage enables safe operation in high-voltage off-line power conversion and motor-drive stages
- 300 mJ avalanche energy rating (Eas) provides robust unclamped inductive switching protection in hard-switching topologies
- Single N-channel configuration with built-in body diode simplifies synchronous rectification and half-bridge designs without external freewheeling diodes
- TO-247 through-hole package offers low thermal resistance for high-power dissipation in heat-sinked industrial applications
Applications
STW8NK80Z is designed for high-voltage switch-mode power supplies, AC-DC flyback converters operating from 90–265 V mains, and variable-speed motor drives where an 800 V blocking capability provides a safe margin above line-voltage transients. Its 300 mJ avalanche rating makes it robust in inductive load switching applications such as solenoid drivers and relay coil discharge circuits. The TO-247 package suits high-current industrial designs where board-mounted heat-sinking is required for sustained 6.2 A operation.
Specifications
| Factory Lead Time | 16Weeks |
| YTEOL | 6.2 |
| Avalanche Energy Rating (Eas) | 300mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800V |
| Drain Current-Max (ID) | 6.2A |
| Drain-source On Resistance-Max | 1.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 140W |
| Pulsed Drain Current-Max (IDM) | 24.8A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the 300 mJ avalanche energy rating of STW8NK80Z protect circuits during inductive load switching?
When an inductive load such as a motor winding or transformer is switched off, the collapsing magnetic field generates a voltage spike that can exceed the 800 V drain-source rating. STW8NK80Z absorbs up to 300 mJ of unclamped inductive energy per pulse without damage, allowing it to safely handle transients from coil loads without requiring additional external TVS diodes in most industrial switching designs below 6.2 A.
Can STW8NK80Z be used in a flyback converter running from 230 V AC mains, and what derating should be applied?
Yes. A 230 V AC mains supply peaks at approximately 325 V, and transients can push bus voltage to 400–500 V in poorly filtered designs. STW8NK80Z's 800 V breakdown provides a comfortable 1.6× derating margin at 500 V, which is in line with the recommended 80% voltage stress rule for offline converters. With a 1.5 Ω on-resistance and 6.2 A maximum drain current, it supports up to roughly 100 W output in a typical CCM flyback topology.
What thermal management does the TO-247 package of STW8NK80Z require at full 6.2 A drain current?
The TO-247 package has a junction-to-case thermal resistance of approximately 1.5°C/W. At 6.2 A and 1.5 Ω on-resistance, conduction losses reach about 57.7 mW per ohm per ampere squared, and with switching losses a heat-sink of at most 2°C/W is recommended to keep Tj below 150°C at 25°C ambient. Using thermal paste between the device and heat-sink is mandatory to achieve the sub-0.1°C/W interface resistance needed for sustained operation.
How does STW8NK80Z compare to a 650 V rated MOSFET for use in a 400 V DC bus industrial inverter?
A 650 V MOSFET leaves only a 62% derating margin on a 400 V DC bus, which may be insufficient when line surges, load dump, or EMI filter resonance push the bus above 420 V. STW8NK80Z's 800 V rating gives a 50% margin at 530 V peak, satisfying IEC 61800 surge-immunity requirements for 400 V AC-fed inverters. The trade-off is a slightly higher 1.5 Ω on-resistance versus sub-0.5 Ω typical of 650 V devices, so gate-drive optimization at 10–15 V is important to minimize conduction losses.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0500 | $3.05 |
| 10+ | $2.5800 | $25.80 |
| 30+ | $1.5100 | $45.30 |
| 600+ | $1.4100 | $846.00 |
In Stock · 24h Response · Worldwide Shipping
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