PSMN7R0-30YL,115 Nexperia MOSFET (N-Channel) (SOIC) In Stock
The Nexperia PSMN7R0-30YL,115 is a high-efficiency N-channel MOSFET with 30 V breakdown voltage, 65 A drain current, and ultra-low 11.3 mΩ on-resistance in a compact SOT669 package. Ideal for synchronous rectification and motor drive applications. Available in stock with worldwide shipping.
- Manufacturer
- Nexperia
- Package
- —
- Pin Count
- 4
- Lifecycle
- NOT RECOMMENDED
- Datasheet
- PSMN7R0-30YL,115 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 65 A drain current and 30 V breakdown voltage TrenchFET for high-power switching in motor drives and DC-DC converters
- Ultra-low Rds(on) of 11.3 mΩ maximizes efficiency in synchronous rectification and power conversion stages
- Avalanche energy rating of 21 mJ provides robustness against inductive switching transients
- Compact SOT669 package with drain case connection enables excellent thermal dissipation on PCB
Applications
The PSMN7R0-30YL,115 is optimized for synchronous buck converters, motor control H-bridges, and battery protection circuits in consumer electronics and industrial power systems operating up to 30 V. Its 65 A current capacity and 11.3 mΩ on-resistance make it an ideal switch for high-frequency, high-efficiency DC-DC converters and load switches in portable devices, e-bikes, and battery management systems.
Specifications
| Manufacturer Package Code | SOT669 |
| Factory Lead Time | 16Weeks |
| YTEOL | 3 |
| Additional Feature | HIGH EFFICIENCY |
| Avalanche Energy Rating (Eas) | 21mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30V |
| Drain Current-Max (ID) | 65A |
| Drain-source On Resistance-Max | 0.0113Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 145pF |
| JEDEC-95 Code | MO-235 |
| JESD-30 Code | R-PSSO-G4 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 51W |
| Pulsed Drain Current-Max (IDM) | 260A |
| Qualification Status | Not Qualified |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Malaysia, Philippines |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the PSMN7R0-30YL,115 MOSFET?
The Nexperia PSMN7R0-30YL,115 is rated for a 30 V minimum drain-source breakdown voltage, 65 A maximum drain current, and an ultra-low maximum on-resistance of 11.3 mΩ (0.0113 Ω). These specifications make it highly efficient for synchronous rectification and motor drive switching applications.
How does the 21 mJ avalanche energy rating benefit inductive load switching applications?
The PSMN7R0-30YL,115 has an avalanche energy rating (Eas) of 21 mJ, meaning it can safely absorb inductive flyback energy during switching without damage. This is critical in motor control H-bridges and DC-DC converters where 65 A drain currents switch through inductive loads at up to 30 V.
In which power conversion topologies does the PSMN7R0-30YL,115 deliver the highest efficiency gains?
The PSMN7R0-30YL,115 excels in synchronous buck converters, synchronous rectification stages, and low-side switches in 12 V to 30 V power systems, where its 11.3 mΩ Rds(on) and 65 A current rating minimize conduction losses at high switching frequencies, delivering efficiency improvements over conventional rectifiers.
What package does the PSMN7R0-30YL,115 use and what is its lead time for procurement?
The PSMN7R0-30YL,115 is housed in an SOT669 surface-mount package with the drain connected to the case for improved thermal performance. Its factory lead time is 16 weeks, so procurement planning for production runs should account for this lead time when sourcing this 30 V / 65 A N-channel MOSFET.
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