IPB048N15N5ATMA1 Infineon MOSFET (N-Channel) (Other) In Stock

Infineon IPB048N15N5ATMA1 is a 150 V, 120 A N-channel power MOSFET with an ultra-low 4.8 mΩ Rds(on), built-in body diode, and 230 mJ avalanche energy rating in a TO-263 (D2PAK) package, optimized for high-efficiency motor drives and DC-DC power conversion.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
IPB048N15N5ATMA1Other
Quick Facts
Manufacturer
Infineon
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Ultra-low Rds(on) of 4.8 mΩ at 150 V / 120 A rating for minimal conduction losses in high-current motor drive and power converter topologies
  • 230 mJ avalanche energy rating (Eas) ensures robust tolerance to inductive switching transients in motor control and flyback converter applications
  • Integrated built-in body diode eliminates need for external freewheeling diodes in synchronous rectifier and half-bridge switching stages
  • TO-263 (D2PAK-3) surface-mount package provides efficient thermal dissipation to PCB copper planes without requiring through-hole mounting

Applications

The IPB048N15N5ATMA1 is engineered for high-efficiency switched-mode power supplies, synchronous DC-DC buck and boost converters, and three-phase BLDC motor drives operating from 12 V to 48 V bus systems where low switching and conduction losses are critical. Its 120 A drain current capability and ultra-low 4.8 mΩ Rds(on) make it a direct fit for electric vehicle on-board chargers, industrial servo drives, and solar inverter power stages. The D2PAK surface-mount format enables high-current PCB layouts with direct thermal coupling to copper fill, reducing heatsink requirements in thermally constrained power electronics designs.

Specifications

Pbfree CodeYes
Factory Lead Time26Weeks
YTEOL6
Avalanche Energy Rating (Eas)230mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min150V
Drain Current-Max (ID)120A
Drain-source On Resistance-Max0.0048Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Polarity/Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)480A
Surface MountYES
Terminal FinishTin (Sn)
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginGermany, Malaysia, Mexico

Datasheet

IPB048N15N5ATMA1 Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What drain-source breakdown voltage and maximum drain current does the IPB048N15N5ATMA1 support for power switching designs?

The IPB048N15N5ATMA1 is rated for a minimum drain-source breakdown voltage of 150 V and a maximum drain current of 120 A. This combination supports high-power switching applications such as 48 V motor drives, synchronous buck converters with heavy loads, and EV battery management switches where both elevated bus voltages and high peak currents must be handled without avalanche breakdown or thermal runaway.

How does the 4.8 mΩ Rds(on) of the IPB048N15N5ATMA1 impact power loss in a 48 V synchronous buck converter?

At 120 A continuous drain current, the 4.8 mΩ Rds(on) results in a conduction power loss of only 69 W (I² × R = 120² × 0.0048), making the IPB048N15N5ATMA1 one of the most efficient 150 V MOSFETs in its class for high-current 48 V bus applications. This low resistance allows designers to achieve converter efficiencies above 98% in synchronous buck topologies used in industrial motor drives and on-board chargers.

Why is the 230 mJ avalanche energy rating of the IPB048N15N5ATMA1 important for motor drive reliability?

In motor drive applications, inductive loads generate voltage spikes when switching currents are interrupted, which can exceed the 150 V rated breakdown and cause device failure if the MOSFET cannot safely absorb that energy. The 230 mJ avalanche energy rating (Eas) of the IPB048N15N5ATMA1 means the device can absorb substantial unclamped energy pulses during motor braking or fault conditions without catastrophic breakdown, providing a critical safety margin in brushless DC and servo motor controller designs.

How does the TO-263 (D2PAK) package of IPB048N15N5ATMA1 benefit thermal management in high-power PCB designs?

The TO-263 (D2PAK-3) surface-mount package provides a large exposed drain pad thermally bonded to the PCB copper plane, enabling junction-to-board thermal resistance values typically below 1°C/W with adequate copper fill. This allows the IPB048N15N5ATMA1 to dissipate the heat generated at 120 A operation without bulky heatsinks, supporting compact high-density power module designs in solar inverters, EV chargers, and industrial drives operating at ambient temperatures up to 175°C junction limit.

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Lead Time3-7 business days
MOQFrom 1 piece
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OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy