IPP180N10N3GXKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

Name: IPP180N10N3GXKSA1
Brand: Infineon
SKU: IPP180N10N3GXKSA1
Availability: InStock

The IPP180N10N3GXKSA1 is an Infineon N-channel MOSFET in TO-220 package rated at 100 V and 43 A with ultra-low 18 mΩ on-resistance, suited for power conversion and motor drive circuits. It features a built-in body diode and 50 mJ avalanche energy rating for robust switching reliability. Available from stock with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026

Package / Visual Reference

IPP180N10N3GXKSA1Transistor Outline, Vertical

Quick Facts

Manufacturer: Infineon
Package: Transistor Outline, Vertical
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: IPP180N10N3GXKSA1 Datasheet PDF
Category: MOSFET (N-Channel)
Price: From $0.3861(MOQ 3)
Temp Range: ?°C to 175.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of IPP180N10N3GXKSA1?

Ultra-low 18 mΩ drain-source on-resistance (RDS(on)) minimizes conduction losses in 100 V switching stages
43 A continuous drain current rating supports high-power motor drives, DC-DC converters, and load switches
50 mJ avalanche energy rating (Eas) provides robustness against inductive switching transients in unclamped inductive load conditions

What is IPP180N10N3GXKSA1 used for?

The IPP180N10N3GXKSA1 is used in industrial motor drives, synchronous buck converters, and battery management systems operating from 12 V to 48 V bus voltages, where its 100 V rating and 18 mΩ on-resistance reduce switching losses. It also suits power tool controllers and e-bike motor controllers that demand high continuous drain current up to 43 A within the compact TO-220 footprint operating across -55°C to 150°C.

What are the specifications of IPP180N10N3GXKSA1?

Pbfree Code	Yes
Factory Lead Time	16Weeks
YTEOL	5
Avalanche Energy Rating (Eas)	50mJ
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100V
Drain Current-Max (ID)	43A
Drain-source On Resistance-Max	0.018Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	172A
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Finish	Tin (Sn)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Transistor Outline, Vertical

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
ECCN	EAR99
Country of Origin	Germany, Mainland China

Where can I find the IPP180N10N3GXKSA1 datasheet?

IPP180N10N3GXKSA1 Datasheet Download

Official datasheet from Infineon

What are equivalent replacements for IPP180N10N3GXKSA1?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What is the maximum drain current and voltage rating for IPP180N10N3GXKSA1?

The IPP180N10N3GXKSA1 supports a maximum drain-to-source voltage of 100 V and a continuous drain current of 43 A at 25°C case temperature, making it suitable for industrial motor drives and DC-DC converters operating on 12 V to 48 V power rails.

How does IPP180N10N3GXKSA1 perform in inductive switching applications with energy spikes?

The IPP180N10N3GXKSA1 has an avalanche energy rating of 50 mJ, meaning it can absorb unclamped inductive switching transients without device failure, providing design margin for motor drive circuits where freewheeling currents create voltage spikes above the 100 V drain-source breakdown voltage.

Which power conversion topologies can benefit from IPP180N10N3GXKSA1's low on-resistance?

Synchronous buck converters, bidirectional DC-DC converters, and half-bridge inverter stages benefit most from the 18 mΩ RDS(on), as this ultra-low on-resistance reduces I²R conduction losses at 43 A load currents, allowing higher switching frequencies between 100 kHz and 500 kHz without excessive thermal dissipation.

What package does IPP180N10N3GXKSA1 use, and how does it aid thermal management?

The IPP180N10N3GXKSA1 is housed in a TO-220AB (3-pin through-hole) package with an exposed metal tab that can be directly bolted to a heatsink, enabling thermal resistance to ambient below 5°C/W when properly heatsunk, which supports continuous 43 A operation within a junction temperature limit of 150°C.

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AvailabilityIn Stock

Reference Price (USD)

From $0.3861

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
3+	$0.5878	$1.76
200+	$0.3985	$79.69
400+	$0.3923	$156.92
800+	$0.3861	$308.91

pcs

Unit price: $0.5878 · Total: $1.76

In Stock · 24h Response · Worldwide Shipping

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Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”

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CTO, AutoDrive Systems, Italy