IPP180N10N3GXKSA1 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The IPP180N10N3GXKSA1 is an Infineon N-channel MOSFET in TO-220 package rated at 100 V and 43 A with ultra-low 18 mΩ on-resistance, suited for power conversion and motor drive circuits. It features a built-in body diode and 50 mJ avalanche energy rating for robust switching reliability. Available from stock with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- IPP180N10N3GXKSA1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Ultra-low 18 mΩ drain-source on-resistance (RDS(on)) minimizes conduction losses in 100 V switching stages
- 43 A continuous drain current rating supports high-power motor drives, DC-DC converters, and load switches
- 50 mJ avalanche energy rating (Eas) provides robustness against inductive switching transients in unclamped inductive load conditions
Applications
The IPP180N10N3GXKSA1 is used in industrial motor drives, synchronous buck converters, and battery management systems operating from 12 V to 48 V bus voltages, where its 100 V rating and 18 mΩ on-resistance reduce switching losses. It also suits power tool controllers and e-bike motor controllers that demand high continuous drain current up to 43 A within the compact TO-220 footprint operating across -55°C to 150°C.
Specifications
| Pbfree Code | Yes |
| Factory Lead Time | 16Weeks |
| YTEOL | 5 |
| Avalanche Energy Rating (Eas) | 50mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 43A |
| Drain-source On Resistance-Max | 0.018Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 172A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Germany, Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and voltage rating for IPP180N10N3GXKSA1?
The IPP180N10N3GXKSA1 supports a maximum drain-to-source voltage of 100 V and a continuous drain current of 43 A at 25°C case temperature, making it suitable for industrial motor drives and DC-DC converters operating on 12 V to 48 V power rails.
How does IPP180N10N3GXKSA1 perform in inductive switching applications with energy spikes?
The IPP180N10N3GXKSA1 has an avalanche energy rating of 50 mJ, meaning it can absorb unclamped inductive switching transients without device failure, providing design margin for motor drive circuits where freewheeling currents create voltage spikes above the 100 V drain-source breakdown voltage.
Which power conversion topologies can benefit from IPP180N10N3GXKSA1's low on-resistance?
Synchronous buck converters, bidirectional DC-DC converters, and half-bridge inverter stages benefit most from the 18 mΩ RDS(on), as this ultra-low on-resistance reduces I²R conduction losses at 43 A load currents, allowing higher switching frequencies between 100 kHz and 500 kHz without excessive thermal dissipation.
What package does IPP180N10N3GXKSA1 use, and how does it aid thermal management?
The IPP180N10N3GXKSA1 is housed in a TO-220AB (3-pin through-hole) package with an exposed metal tab that can be directly bolted to a heatsink, enabling thermal resistance to ambient below 5°C/W when properly heatsunk, which supports continuous 43 A operation within a junction temperature limit of 150°C.
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