STRH100N6HYT STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STRH100N6HYT is a radiation-hardened N-channel Power MOSFET from STMicroelectronics rated at 60 V and 40 A with 24 mΩ on-resistance. Designed for space and high-reliability applications, it features fast switching, avalanche energy rating of 954 mJ, and a built-in diode. Available in TO-254AA package for demanding aerospace and satellite power management designs.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N6HYT Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STRH100N6HYT?
- Radiation-hardened design for space and high-reliability aerospace applications
- 60 V / 40 A rating with ultra-low 24 mΩ drain-source on-resistance
- 954 mJ avalanche energy rating with built-in body diode for robust switching
- Fast switching performance optimized for high-frequency power conversion
What is STRH100N6HYT used for?
STRH100N6HYT is designed for radiation-hardened power management in satellites, spacecraft, and military electronics where ionizing radiation tolerance is critical. Its 60 V / 40 A rating and fast switching characteristics make it ideal for DC-DC converters, motor drives, and load switches operating in space environments. The built-in diode and high avalanche energy rating further support synchronous rectification and inductive load driving in mission-critical systems.
What are the specifications of STRH100N6HYT?
| YTEOL | 5.15 |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 0.024Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 470pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 280ns |
| Turn-on Time-Max (ton) | 300ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Where can I find the STRH100N6HYT datasheet?
STRH100N6HYT Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STRH100N6HYT?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What drain-source voltage and current ratings make STRH100N6HYT suitable for high-power space applications?
The STRH100N6HYT is rated for a 60 V drain-source breakdown voltage and a maximum drain current of 40 A, enabling robust power switching in satellites and aerospace power systems. Its ultra-low 24 mΩ on-resistance minimizes conduction losses, making it efficient for continuous high-current operation.
How does STRH100N6HYT handle inductive load switching, and what avalanche energy can it absorb?
The STRH100N6HYT features a single built-in body diode and an avalanche energy rating (Eas) of 954 mJ, allowing it to safely absorb energy from inductive kickback during switching transients. This makes it well-suited for motor drives and DC-DC converters where unclamped inductive switching is a concern at voltages up to 60 V.
Which space or military power converter designs benefit most from STRH100N6HYT's radiation hardening?
Satellite power conditioning units, radiation-tolerant DC-DC converters, and military avionics power supplies benefit most from STRH100N6HYT's radiation-hardened construction. The device maintains reliable switching performance at 40 A and 60 V even under total ionizing dose and single-event effect environments typical in LEO or GEO satellite orbits.
What package does STRH100N6HYT use and how does it affect PCB integration for aerospace designs?
STRH100N6HYT is housed in the TO-254AA package, a through-hole package with robust thermal performance that can dissipate significant heat in space-grade assemblies. The package supports secure mechanical mounting and is commonly used in high-reliability designs requiring vibration resistance and tight thermal management with heatsinks rated for the 40 A, 60 V operating conditions.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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