STB15810 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
The STB15810 is an N-channel power MOSFET from STMicroelectronics featuring ultra-low 3.4 mΩ (typ.) on-resistance, 100 V drain-source breakdown voltage, and 110 A drain current in the D2PAK through-hole-compatible package. Its STripFET F7 split-gate trench technology minimizes conduction and switching losses. Available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STB15810 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STB15810?
- Ultra-low 3.4 mΩ (typ.) RDS(on) at 100 V, enabling high-efficiency power conversion with minimal conduction losses
- 110 A continuous drain current and 495 mJ avalanche energy rating for robust motor drive and power supply designs
- STripFET F7 split-gate trench technology balancing low RDS(on) with fast switching for reduced total power dissipation
What is STB15810 used for?
The STB15810 is targeted at high-current DC-DC converters, synchronous rectification stages, and motor drive inverters where a 100 V / 110 A N-channel MOSFET with ultra-low on-resistance is required to maximize efficiency. Its D2PAK surface-mount package with an exposed drain pad provides excellent thermal dissipation directly through the PCB, making it ideal for server power supplies, industrial variable-speed drives, and automotive 48V battery management systems. The 495 mJ avalanche energy rating adds design margin in inductive switching environments.
What are the specifications of STB15810?
| YTEOL | 0 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 495mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 110A |
| Drain-source On Resistance-Max | 0.0039Ω |
| FET Technology | SPLIT GATE TRENCH MOSFET |
| Feedback Cap-Max (Crss) | 67pF |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 250W |
| Pulsed Drain Current-Max (IDM) | 440A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the STB15810 datasheet?
STB15810 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STB15810?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the typical RDS(on) of the STB15810, and how does it compare to competing 100 V MOSFETs?
The STB15810 achieves a typical RDS(on) of 3.4 mΩ at 100 V with a maximum rated value of 3.9 mΩ, placing it among the lowest on-resistance devices in the 100 V N-channel MOSFET category and reducing I²R conduction losses at 110 A load currents versus conventional trench MOSFETs with 5–8 mΩ RDS(on).
For which 48V or 100V power conversion topologies is the STB15810 most suitable?
The STB15810 is well suited for synchronous buck converters, half-bridge and full-bridge DC-DC stages operating from 12 V to 48 V bus rails, and automotive 48V mild-hybrid inverter switches where the 100 V breakdown voltage provides 2× margin above bus voltage transients and the 110 A rating handles peak inductor currents without derating.
How does the D2PAK package of the STB15810 aid thermal management in a high-current power stage?
The D2PAK (TO-263) package exposes the drain tab as a large top-side copper pad that solders directly to a PCB copper pour, providing a thermal resistance of approximately 0.5°C/W junction-to-case. Combined with an external heatsink or heavy copper pour, this allows the STB15810 to dissipate over 100 W continuously while keeping junction temperature below 150°C at 110 A load.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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