PSMN4R8-100BSE Nexperia MOSFET (N-Channel) (Other) In Stock
The Nexperia PSMN4R8-100BSE is an N-channel power MOSFET rated at 100 V and 120 A continuous drain current in a D2PAK package. It delivers an ultra-low RDS(on) of 4.8 mΩ maximum with an integrated body diode for robust switching performance. Available from authorized distributors worldwide with competitive pricing.
- Manufacturer
- Nexperia
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- PSMN4R8-100BSE Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $3.5000(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of PSMN4R8-100BSE?
- Ultra-low maximum RDS(on) of 4.8 mΩ at 10 V gate drive reduces conduction losses significantly in high-current switching applications carrying up to 120 A
- 100 V drain-source breakdown voltage with 542 mJ avalanche energy rating (Eas) provides robust protection against inductive voltage spikes in motor drive and power conversion circuits
- D2PAK surface-mount package with drain-connected pad enables excellent thermal management, supporting high power densities in compact PCB layouts without through-hole mounting
What is PSMN4R8-100BSE used for?
The PSMN4R8-100BSE is designed for synchronous rectification and high-current DC-DC conversion in server power supplies, battery management systems, and electric vehicle charging equipment where efficiency at 120 A load is critical. Its low 4.8 mΩ on-resistance and 100 V rating also make it suitable for motor drive H-bridge stages in industrial automation and robotics. The integrated body diode and high avalanche energy rating support reliable operation in inductive load environments.
What are the specifications of PSMN4R8-100BSE?
| YTEOL | 5.9 |
| Avalanche Energy Rating (Eas) | 542mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 120A |
| Drain-source On Resistance-Max | 0.0048Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 643pF |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 405W |
| Power Dissipation-Max (Abs) | 405W |
| Pulsed Drain Current-Max (IDM) | 707A |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 294ns |
| Turn-on Time-Max (ton) | 159ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Where can I find the PSMN4R8-100BSE datasheet?
PSMN4R8-100BSE Datasheet DownloadOfficial datasheet from Nexperia
What are equivalent replacements for PSMN4R8-100BSE?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum RDS(on) of the PSMN4R8-100BSE and at what gate voltage is it specified?
The PSMN4R8-100BSE has a maximum drain-source on-resistance of 4.8 mΩ measured at a gate-source voltage of 10 V and a drain current of 25 A. This low RDS(on) value results in minimal conduction losses, making it suitable for high-efficiency power conversion designs handling up to 120 A continuous current.
How does the 542 mJ avalanche energy rating benefit motor drive designs using PSMN4R8-100BSE?
The 542 mJ unclamped inductive switching (UIS) avalanche energy rating ensures the PSMN4R8-100BSE can safely absorb the energy from inductive voltage spikes generated when switching motor windings off. This protects the device from avalanche breakdown failures in H-bridge and half-bridge motor drive stages operating at bus voltages up to 100 V.
Is the D2PAK package of the PSMN4R8-100BSE suitable for automated PCB assembly in high-volume production?
Yes, the D2PAK (TO-263) surface-mount package used on the PSMN4R8-100BSE is fully compatible with automated pick-and-place and reflow soldering processes used in high-volume PCB assembly. The exposed drain pad offers a thermal resistance path to the PCB copper pour, enabling dissipation of the power generated at 120 A current levels without external heatsinks in many applications.
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About Nexperia
Nexperia is a leading electronic component manufacturer. FindMyChip sources Nexperia ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2000 | $4.20 |
| 3+ | $3.5000 | $10.50 |
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