STRH100N6HY1 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STRH100N6HY1 is a radiation-hardened N-channel power MOSFET from STMicroelectronics rated at 60V drain-source breakdown and 40A maximum drain current. It features 24mΩ maximum on-resistance, 954mJ avalanche energy rating, and fast-switching operation in a TO-254AA package for space and hi-rel power applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH100N6HY1 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened design for satellite, spacecraft, and nuclear-environment power conversion
- 60V / 40A capability with 24mΩ max RDS(on) for high-efficiency low-conduction-loss switching
- 954mJ avalanche energy (Eas) rating for robust unclamped-inductive switching protection
- Integrated body diode and fast-switching characteristics for synchronous rectification and H-bridge stages
Applications
The STRH100N6HY1 is deployed in space-grade DC-DC converters, satellite power distribution units, and radiation-tolerant motor drivers where total ionizing dose (TID) and single-event effects (SEE) immunity are mandatory. Its 40A current capability and 24mΩ on-resistance support high-efficiency buck and boost converters for powering avionics payloads from an unregulated bus. It is also used in hi-rel terrestrial applications such as nuclear instrumentation, particle accelerator control electronics, and aerospace ground-support equipment that must operate in elevated-radiation environments without parametric drift.
Specifications
| YTEOL | 5.15 |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) | 954mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 0.024Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 470pF |
| JEDEC-95 Code | TO-254AA |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 176W |
| Pulsed Drain Current-Max (IDM) | 320A |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 280ns |
| Turn-on Time-Max (ton) | 300ns |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STRH100N6HY1:
Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Frequently Asked Questions
What does the 60V / 40A / 24mΩ specification of STRH100N6HY1 enable in a space-grade DC-DC converter design?
At 60V drain-source breakdown, the STRH100N6HY1 handles an unregulated 28V to 50V spacecraft bus with a 2:1 derating margin recommended by MIL-STD-975. At 40A drain current and 24mΩ RDS(on), conduction loss at 20A operating current is just 0.024Ω × (20A)² = 9.6W, enabling high-efficiency synchronous-buck converters that can sustain output power above 500W within the thermal budget of a passively cooled space chassis.
How does the 954mJ avalanche energy rating protect the STRH100N6HY1 in inductive-load switching circuits?
Avalanche energy (Eas) of 954mJ means the STRH100N6HY1 can absorb 954 millijoules of unclamped inductive switching energy in a single event before thermal failure. For a motor-drive application switching a 100µH inductor at 40A, the stored energy is 0.5 × 100µH × (40A)² = 80mJ, which is well below the 954mJ limit, giving a safety margin greater than 10:1 against single-pulse avalanche breakdown in worst-case fault conditions.
How does radiation hardening in the STRH100N6HY1 differ from a commercial-grade 60V MOSFET in the same package?
Radiation-hardened MOSFETs like the STRH100N6HY1 are designed and tested to withstand Total Ionizing Dose (TID) levels of 100krad(Si) or higher and to tolerate Single-Event Gate Rupture (SEGR) and Single-Event Burnout (SEB) at LET thresholds specified in ESA or MIL-spec test reports. A commercial 60V MOSFET of identical RDS(on) will experience threshold-voltage shift and leakage current increase above a few krad, leading to loss of gate control or destructive latch-up, which disqualifies it for any satellite or nuclear mission profile.
When should a system designer choose STRH100N6HY1 over a silicon-carbide (SiC) MOSFET for a hi-rel power stage?
The STRH100N6HY1 is preferred over SiC when radiation testing data, space heritage, and proven TID/SEE qualification reports are required by the program, because mature SiC MOSFETs still have limited radiation characterization data accepted by space agencies. Additionally, at 60V and 40A, silicon on-resistance is already competitive with SiC at similar die sizes, so the switching loss advantage of SiC at frequencies below 200kHz is marginal, while the STRH100N6HY1 benefits from a more established radiation test database for mission assurance reviews.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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