SPA07N60C3 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock

The SPA07N60C3 is an N-channel CoolMOS power MOSFET from Infineon rated at 600 V breakdown voltage and 7.3 A drain current with 0.6 Ω on-resistance. It is avalanche rated with an isolated TO package, available in stock with worldwide shipping.

END OF LIFEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
SPA07N60C3Transistor Outline, Vertical
Quick Facts
Manufacturer
Infineon
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
END OF LIFE
Category
MOSFET (N-Channel)
Temp Range
?°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 600 V minimum breakdown voltage with 7.3 A maximum drain current suits high-voltage power conversion designs
  • 0.6 Ω maximum drain-source on-resistance reduces conduction losses, improving efficiency in switching power supplies
  • 230 mJ avalanche energy rating (Eas) with built-in body diode provides robust protection against inductive flyback transients

Applications

The SPA07N60C3 is suited for offline switching power supplies, LLC resonant converters, and PFC boost stages where a 600 V rated N-channel MOSFET with low 0.6 Ω Rds(on) and avalanche robustness is required. Its isolated TO package and single configuration with built-in diode simplify thermal management in industrial power adapters and motor drives.

Specifications

Pbfree CodeYes
Factory Lead Time15Weeks
YTEOL0
Additional FeatureAVALANCHE RATED
Avalanche Energy Rating (Eas)230mJ
Case ConnectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600V
Drain Current-Max (ID)7.3A
Drain-source On Resistance-Max0.6Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-220AB
JESD-30 CodeR-PSFM-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)32W
Pulsed Drain Current-Max (IDM)21.9A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishTin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

SPA07N60C3 Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key voltage and current ratings of the SPA07N60C3 MOSFET?

The SPA07N60C3 has a minimum drain-source breakdown voltage of 600 V and a maximum drain current of 7.3 A, with a maximum on-resistance of 0.6 Ω, making it appropriate for high-voltage switching applications such as offline power supplies and PFC stages.

How does the avalanche rating of the SPA07N60C3 benefit inductive switching circuits?

The SPA07N60C3 is avalanche rated with a maximum avalanche energy of 230 mJ, meaning it can safely absorb energy from inductive flyback transients without failing, which is critical for motor drive and switching converter designs where clamping circuits may be absent.

For which power conversion topologies is the SPA07N60C3 a practical choice over lower-voltage MOSFETs?

The SPA07N60C3's 600 V breakdown rating makes it directly suitable for AC mains-fed circuits including flyback converters, LLC resonant converters, and totem-pole PFC stages where bus voltages exceed 400 V DC, ruling out lower-voltage 200 V or 300 V devices.

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About Infineon

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AvailabilityIn Stock
Reference Price (USD)
Contact for Price
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pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy