SPA07N60C3 Infineon MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
The SPA07N60C3 is an N-channel CoolMOS power MOSFET from Infineon rated at 600 V breakdown voltage and 7.3 A drain current with 0.6 Ω on-resistance. It is avalanche rated with an isolated TO package, available in stock with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- END OF LIFE
- Datasheet
- SPA07N60C3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.7500(MOQ 25)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SPA07N60C3?
- 600 V minimum breakdown voltage with 7.3 A maximum drain current suits high-voltage power conversion designs
- 0.6 Ω maximum drain-source on-resistance reduces conduction losses, improving efficiency in switching power supplies
- 230 mJ avalanche energy rating (Eas) with built-in body diode provides robust protection against inductive flyback transients
What is SPA07N60C3 used for?
The SPA07N60C3 is suited for offline switching power supplies, LLC resonant converters, and PFC boost stages where a 600 V rated N-channel MOSFET with low 0.6 Ω Rds(on) and avalanche robustness is required. Its isolated TO package and single configuration with built-in diode simplify thermal management in industrial power adapters and motor drives.
What are the specifications of SPA07N60C3?
| Pbfree Code | Yes |
| Factory Lead Time | 15Weeks |
| YTEOL | 0 |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 230mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 7.3A |
| Drain-source On Resistance-Max | 0.6Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 32W |
| Pulsed Drain Current-Max (IDM) | 21.9A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the SPA07N60C3 datasheet?
SPA07N60C3 Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for SPA07N60C3?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the SPA07N60C3 MOSFET?
The SPA07N60C3 has a minimum drain-source breakdown voltage of 600 V and a maximum drain current of 7.3 A, with a maximum on-resistance of 0.6 Ω, making it appropriate for high-voltage switching applications such as offline power supplies and PFC stages.
How does the avalanche rating of the SPA07N60C3 benefit inductive switching circuits?
The SPA07N60C3 is avalanche rated with a maximum avalanche energy of 230 mJ, meaning it can safely absorb energy from inductive flyback transients without failing, which is critical for motor drive and switching converter designs where clamping circuits may be absent.
For which power conversion topologies is the SPA07N60C3 a practical choice over lower-voltage MOSFETs?
The SPA07N60C3's 600 V breakdown rating makes it directly suitable for AC mains-fed circuits including flyback converters, LLC resonant converters, and totem-pole PFC stages where bus voltages exceed 400 V DC, ruling out lower-voltage 200 V or 300 V devices.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 25+ | $0.9800 | $24.50 |
| 50+ | $0.7800 | $39.00 |
| 100+ | $0.7500 | $75.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)
2SK209-BL(TE85L,F)
Toshiba
MOSFET (N-Channel)
IXFH20N100P
IXYS SEMICONDUCTOR
MOSFET (N-Channel)
SI3932DV-T1-GE3
Vishay
MOSFET (N-Channel)
TPW1R306PL,L1Q
Toshiba
MOSFET (N-Channel)
SSM3K56ACT,L3F
Toshiba
MOSFET (N-Channel)
SI4126DY-T1-GE3
Vishay
MOSFET (N-Channel)
AOD4126
Alpha & Omega Semiconductors
MOSFET (N-Channel)
AO3418
Alpha & Omega Semiconductors
MOSFET (N-Channel)