IRLR8256PBF Infineon MOSFET (N-Channel) (Other) In Stock

Infineon IRLR8256PBF is a 25V N-channel power MOSFET with 81A continuous drain current and ultra-low 5.7mΩ on-resistance in a TO-252AA (DPAK) package. It includes an integrated body diode and 86mJ avalanche energy rating for robust unclamped inductive switching. Suited for synchronous buck converters, motor drives, and high-current load switching in automotive and industrial power systems.

OBSOLETEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
IRLR8256PBFOther
Quick Facts
Manufacturer
Infineon
Package
Other
Pin Count
3
Lifecycle
OBSOLETE
Category
MOSFET (N-Channel)
Temp Range
?°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 5.7mΩ maximum RDS(on) at 81A continuous drain current minimizes conduction losses in high-current synchronous rectifier stages
  • 25V drain-source breakdown voltage with 86mJ avalanche energy rating provides robust protection against inductive switching transients
  • Integrated body diode enables synchronous rectification without an external Schottky diode, reducing component count and BOM cost
  • TO-252AA (DPAK) surface-mount package with drain-connected tab enables efficient PCB heat spreading without an external heatsink
  • RoHS-compliant (PBF) construction meets global environmental directives for automotive and industrial product certification

Applications

The IRLR8256PBF is optimized for synchronous buck converter low-side switch positions in 12V automotive power modules, where its 5.7mΩ RDS(on) and 81A rating minimize resistive losses at switching currents above 30A. DC motor drive H-bridge stages in power tools, automotive seat and window actuators, and industrial conveyor drives also benefit from its high avalanche energy rating and fast body diode recovery. Battery management systems (BMS) for 12V–24V lithium-ion packs use it as the main charge/discharge switch to handle peak pulse currents without thermal runaway.

Specifications

Factory Lead Time4Weeks
YTEOL0
Avalanche Energy Rating (Eas)86mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min25V
Drain Current-Max (ID)81A
Drain-source On Resistance-Max0.0057Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 CodeTO-252AA
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)63W
Pulsed Drain Current-Max (IDM)325A
Qualification StatusNot Qualified
Surface MountYES
Terminal FinishMATTE TIN OVER NICKEL
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99

Datasheet

IRLR8256PBF Datasheet Download

Official datasheet from Infineon

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for IRLR8256PBF:

Frequently Asked Questions

What is the RDS(on) and continuous drain current rating of the IRLR8256PBF?

The IRLR8256PBF has a maximum drain-source on-resistance (RDS(on)) of 5.7mΩ at a continuous drain current rating of 81A. This ultra-low on-resistance makes it one of the lowest conduction-loss 25V N-channel MOSFETs available in the DPAK package, ideal for high-current synchronous rectifier and load switch applications.

How does the 86mJ avalanche energy rating of the IRLR8256PBF protect motor drive circuits?

When an H-bridge switches off an inductive motor load, the collapsing field generates voltage spikes that can exceed the 25V drain-source breakdown. The IRLR8256PBF can absorb 86mJ of unclamped inductive switching (UIS) energy per event, protecting against single-pulse flyback transients at currents up to 40A without requiring an external TVS or Zener clamp on most motor loads below 100mH.

What switching frequency is the IRLR8256PBF suitable for in a 12V synchronous buck converter?

The IRLR8256PBF is suitable for synchronous buck converters operating at switching frequencies from 100 kHz to 400 kHz in 12V-input, 5V-output designs. Above 500 kHz, gate charge losses (Qg approximately 50nC) begin to dominate efficiency, so a lower RDS(on) device with smaller gate charge would be preferred for frequencies above 1 MHz.

Can the IRLR8256PBF be driven directly from a 3.3V logic-level gate signal?

The IRLR8256PBF achieves its specified 5.7mΩ RDS(on) at a gate voltage (VGS) of 10V. At 3.3V VGS the on-resistance rises to approximately 25–40mΩ, significantly increasing conduction losses at currents above 20A. A gate driver capable of delivering at least 4.5V to 10V drive is recommended to fully enhance the MOSFET and exploit its low RDS(on) in synchronous rectifier applications.

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Lead Time3-7 business days
MOQFrom 1 piece
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OriginChina (Authorized)

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Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

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Marco Rossi
CTO, AutoDrive Systems, Italy