STP78N75F4 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics STP78N75F4 is a single N-channel power MOSFET rated at 75 V and 78 A drain current with an ultra-low RDS(on) of 11 milliohms in a TO-220AB package. It includes a built-in freewheeling diode and 185 mJ avalanche energy rating for robust motor drive and power switching applications. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STP78N75F4 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6744(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- N-channel power MOSFET rated at 75 V breakdown voltage and 78 A continuous drain current for high-current motor drive and power switching
- Ultra-low RDS(on) of 11 milliohms minimizes conduction losses and improves efficiency in DC-DC converters and synchronous rectifier designs
- 185 mJ avalanche energy rating (Eas) and built-in freewheeling diode provide robust protection against inductive load transients in motor driver applications
Applications
The STP78N75F4 is designed for high-current motor drive circuits, synchronous DC-DC converters, and industrial power switching applications requiring a 75 V N-channel MOSFET with minimal conduction losses. Its 11 milliohm RDS(on) at 78 A enables efficient power conversion in electric vehicle auxiliary drives, brushed DC motor controllers, and server power supply synchronous rectifiers. The TO-220AB package with exposed tab allows direct heatsink attachment for effective thermal management in high-power continuous conduction applications.
Specifications
| Pbfree Code | Yes |
| YTEOL | 0 |
| Avalanche Energy Rating (Eas) | 185mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 75V |
| Drain Current-Max (ID) | 78A |
| Drain-source On Resistance-Max | 0.011Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 312A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key voltage and current ratings of the STP78N75F4 and which power circuits do they suit?
The STP78N75F4 is rated at 75 V drain-source breakdown voltage and 78 A maximum drain current, making it suitable for 48 V bus motor drive circuits, industrial DC-DC converters, and high-current switching regulators. These ratings cover applications including brushed DC motor drivers and synchronous buck converters operating from 12 V to 48 V supply rails with continuous load currents up to 78 A.
How does the 11 milliohm RDS(on) of STP78N75F4 improve power supply efficiency?
The STP78N75F4's maximum RDS(on) of 11 milliohms at rated gate drive results in very low conduction losses even at 78 A drain current, limiting resistive power dissipation to under 66 W at full load. In synchronous DC-DC converter designs, this ultra-low RDS(on) improves overall efficiency and reduces heatsink requirements compared to MOSFETs with higher on-resistance in the same 75 V voltage class.
What protection feature does the STP78N75F4 provide for inductive motor load applications?
The STP78N75F4 includes an avalanche energy rating (Eas) of 185 mJ and a built-in freewheeling diode, providing robust protection against inductive kickback voltages generated when switching motor windings or relay coils. This avalanche capability allows the MOSFET to absorb energy spikes without external clamp circuits in DC motor drive designs operating at up to 75 V, reducing component count and BOM cost in motor controller stages.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6744 | $0.67 |
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