SQ1912AEEH-T1_GE3 Vishay MOSFET (N-Channel) (SOT23 (6-Pin)) In Stock

Vishay SQ1912AEEH-T1_GE3 is a dual N-channel MOSFET in SOT-363 (SC-70 6-pin) package with 20 V breakdown voltage, 0.8 A maximum drain current, and 0.28 Ω on-resistance. Features two independent elements with built-in diodes for compact high-efficiency switching circuits. Available in reel format with worldwide shipping.

ACTIVEMOSFET (N-Channel)Verified Jun 2026
Package / Visual Reference
SQ1912AEEH-T1_GE3SOT23 (6-Pin)
Quick Facts
Manufacturer
Vishay
Package
SOT23 (6-Pin)
Pin Count
6
Lifecycle
ACTIVE
Category
MOSFET (N-Channel)
Temp Range
-55.0°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Dual N-channel MOSFET configuration with 2 independent elements plus built-in diodes in a single SOT-363 (SC-70, 6-pin) package for ultra-compact circuit integration
  • 20 V drain-source breakdown voltage and 0.8 A maximum drain current support low-power switching applications in 3.3 V to 12 V systems
  • Low 0.28 Ω maximum drain-source on-resistance minimizes I²R conduction losses for improved efficiency in portable and battery-powered designs
  • Feedback capacitance (Crss) of only 12 pF enables fast switching transitions for high-frequency DC-DC converters and signal multiplexers

Applications

The SQ1912AEEH-T1_GE3 is well suited for dual-channel load switching, battery protection circuits, and low-side motor control in portable devices and IoT sensor nodes operating from 3.3 V to 12 V supplies. Its dual element configuration with built-in diodes enables back-to-back MOSFET topologies for bidirectional power path control in single-cell and dual-cell Li-ion battery management systems. The compact SC-70 package is ideal for space-constrained wearable electronics, USB power switches, and analog signal multiplexer designs.

Specifications

Factory Lead Time15Weeks
YTEOL6.9
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20V
Drain Current-Max (ID)0.8A
Drain-source On Resistance-Max0.28Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)12pF
JESD-30 CodeR-PDSO-G6
Number of Elements2
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)1.5W
Reference StandardAEC-Q101
Surface MountYES
Terminal FormGULL WING
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor Element MaterialSILICON
PackageSOT23 (6-Pin)

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99

Datasheet

SQ1912AEEH-T1_GE3 Datasheet Download

Official datasheet from Vishay

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

What are the key electrical ratings of the SQ1912AEEH-T1_GE3 that define its safe operating area for 5 V bus switching?

The SQ1912AEEH-T1_GE3 is rated for a 20 V minimum drain-source breakdown voltage, 0.8 A maximum drain current, and 0.28 Ω maximum on-resistance. In a 5 V bus switching application, the device operates well within its 20 V breakdown margin. At 0.5 A load current, conduction loss is only 70 mW (I² × R = 0.25 × 0.28), within the thermal budget of the SC-70 package at room temperature.

How does the dual-element with built-in diode configuration benefit battery protection circuit designs?

The SQ1912AEEH-T1_GE3 integrates 2 independent N-channel MOSFET elements, each with a built-in body diode, in 6 pins. Back-to-back placement of the two elements with source pins tied together creates a bidirectional switch that blocks both charge and discharge current when gated off. This is the fundamental building block of single-cell Li-ion battery protection ICs, enabling overcurrent protection in both directions within the 20 V and 0.8 A rated envelope.

For a high-frequency DC-DC converter design, how does the 12 pF feedback capacitance (Crss) of SQ1912AEEH-T1_GE3 affect switching speed?

The maximum Crss (reverse transfer capacitance) of 12 pF is a critical switching parameter because it governs the Miller plateau duration during turn-on and turn-off transitions. At 12 pF, the SQ1912AEEH-T1_GE3 supports switching frequencies above 1 MHz in synchronous buck converters operating from a 5 V input. Lower Crss reduces gate charge requirements, cutting switching losses and enabling gate drive currents under 10 mA in lightweight microcontroller-driven power stages.

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About Vishay

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AvailabilityIn Stock
Reference Price (USD)
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pcs

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy