SQ1912AEEH-T1_GE3 Vishay MOSFET (N-Channel) (SOT23 (6-Pin)) In Stock
Vishay SQ1912AEEH-T1_GE3 is a dual N-channel MOSFET in SOT-363 (SC-70 6-pin) package with 20 V breakdown voltage, 0.8 A maximum drain current, and 0.28 Ω on-resistance. Features two independent elements with built-in diodes for compact high-efficiency switching circuits. Available in reel format with worldwide shipping.
- Manufacturer
- Vishay
- Package
- SOT23 (6-Pin)
- Pin Count
- 6
- Lifecycle
- ACTIVE
- Datasheet
- SQ1912AEEH-T1_GE3 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.1453(MOQ 100)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SQ1912AEEH-T1_GE3?
- Dual N-channel MOSFET configuration with 2 independent elements plus built-in diodes in a single SOT-363 (SC-70, 6-pin) package for ultra-compact circuit integration
- 20 V drain-source breakdown voltage and 0.8 A maximum drain current support low-power switching applications in 3.3 V to 12 V systems
- Low 0.28 Ω maximum drain-source on-resistance minimizes I²R conduction losses for improved efficiency in portable and battery-powered designs
- Feedback capacitance (Crss) of only 12 pF enables fast switching transitions for high-frequency DC-DC converters and signal multiplexers
What is SQ1912AEEH-T1_GE3 used for?
The SQ1912AEEH-T1_GE3 is well suited for dual-channel load switching, battery protection circuits, and low-side motor control in portable devices and IoT sensor nodes operating from 3.3 V to 12 V supplies. Its dual element configuration with built-in diodes enables back-to-back MOSFET topologies for bidirectional power path control in single-cell and dual-cell Li-ion battery management systems. The compact SC-70 package is ideal for space-constrained wearable electronics, USB power switches, and analog signal multiplexer designs.
What are the specifications of SQ1912AEEH-T1_GE3?
| Factory Lead Time | 15Weeks |
| YTEOL | 6.9 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20V |
| Drain Current-Max (ID) | 0.8A |
| Drain-source On Resistance-Max | 0.28Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 12pF |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.5W |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |
| Package | SOT23 (6-Pin) |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
Where can I find the SQ1912AEEH-T1_GE3 datasheet?
SQ1912AEEH-T1_GE3 Datasheet DownloadOfficial datasheet from Vishay
What are equivalent replacements for SQ1912AEEH-T1_GE3?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the key electrical ratings of the SQ1912AEEH-T1_GE3 that define its safe operating area for 5 V bus switching?
The SQ1912AEEH-T1_GE3 is rated for a 20 V minimum drain-source breakdown voltage, 0.8 A maximum drain current, and 0.28 Ω maximum on-resistance. In a 5 V bus switching application, the device operates well within its 20 V breakdown margin. At 0.5 A load current, conduction loss is only 70 mW (I² × R = 0.25 × 0.28), within the thermal budget of the SC-70 package at room temperature.
How does the dual-element with built-in diode configuration benefit battery protection circuit designs?
The SQ1912AEEH-T1_GE3 integrates 2 independent N-channel MOSFET elements, each with a built-in body diode, in 6 pins. Back-to-back placement of the two elements with source pins tied together creates a bidirectional switch that blocks both charge and discharge current when gated off. This is the fundamental building block of single-cell Li-ion battery protection ICs, enabling overcurrent protection in both directions within the 20 V and 0.8 A rated envelope.
For a high-frequency DC-DC converter design, how does the 12 pF feedback capacitance (Crss) of SQ1912AEEH-T1_GE3 affect switching speed?
The maximum Crss (reverse transfer capacitance) of 12 pF is a critical switching parameter because it governs the Miller plateau duration during turn-on and turn-off transitions. At 12 pF, the SQ1912AEEH-T1_GE3 supports switching frequencies above 1 MHz in synchronous buck converters operating from a 5 V input. Lower Crss reduces gate charge requirements, cutting switching losses and enabling gate drive currents under 10 mA in lightweight microcontroller-driven power stages.
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Why Buy from FindMyChip
About Vishay
Vishay is a leading electronic component manufacturer. FindMyChip sources Vishay ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.3489 | $34.89 |
| 500+ | $0.2667 | $133.33 |
| 1000+ | $0.2401 | $240.13 |
| 3000+ | $0.2150 | $645.00 |
| 6000+ | $0.2100 | $1260.00 |
| 12000+ | $0.1453 | $1743.36 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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