SCTH100N120G2-AG STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STMicroelectronics SCTH100N120G2-AG is an automotive-grade N-channel silicon carbide (SiC) MOSFET rated at 1200 V and 100 A, housed in a high-power package, delivering ultra-low RDS(on) for high-efficiency power switching in EV inverters and industrial converters. AEC-Q101 qualified for automotive reliability requirements. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 8
- Lifecycle
- OBSOLETE
- Datasheet
- SCTH100N120G2-AG Datasheet PDF
- Category
- MOSFET (N-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 1200 V drain-source breakdown voltage for high-voltage EV and industrial power applications
- 100 A continuous drain current enabling multi-kilowatt power conversion in compact designs
- SiC MOSFET technology delivers ultra-low RDS(on) and fast switching for reduced switching losses
- AEC-Q101 automotive qualification for reliable operation in harsh under-hood environments
- High-temperature operation capability suitable for power modules up to 175°C junction temperature
Applications
The SCTH100N120G2-AG is designed for high-efficiency power switching in automotive traction inverters, onboard chargers (OBC), and DC-DC converters in electric and hybrid vehicles requiring 1200 V isolation capability and up to 100 A current handling. It is also widely used in industrial motor drives, solar inverters, and uninterruptible power supplies (UPS) where SiC technology provides lower switching losses and higher operating frequencies compared to silicon IGBTs. AEC-Q101 qualification ensures it meets strict automotive supply chain reliability and traceability standards.
Specifications
| YTEOL | 0 |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for SCTH100N120G2-AG:
Power Field-Effect Transistor, 95A I(D), 650V, 0.026ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What are the key voltage and current ratings of SCTH100N120G2-AG for EV traction inverter designs?
The SCTH100N120G2-AG is rated for 1200 V drain-source voltage and 100 A continuous drain current, making it suitable for 800 V bus EV traction inverter topologies with adequate design margin. Its SiC MOSFET construction enables switching frequencies above 20 kHz, reducing passive component size while achieving conversion efficiencies exceeding 98% in typical three-phase inverter stages.
How does SCTH100N120G2-AG benefit a solar inverter design compared to an equivalent silicon IGBT at 1200 V?
Compared to a 1200 V silicon IGBT, SCTH100N120G2-AG offers significantly lower switching losses due to SiC's wide bandgap properties, enabling operation at 50 kHz or higher versus the typical 20 kHz limit for IGBTs. This allows solar inverters to use smaller inductors and capacitors, reduce thermal management requirements, and achieve higher overall conversion efficiency, often improving system efficiency by 1 to 2 percentage points at full load.
Is SCTH100N120G2-AG qualified for automotive use, and what reliability standard does it meet?
Yes, SCTH100N120G2-AG carries AEC-Q101 automotive qualification, which is the industry-standard reliability qualification for discrete semiconductors in automotive applications. It is tested for high-temperature gate bias, high-temperature reverse bias, and other automotive stress conditions, confirming suitability for under-hood environments with junction temperatures up to 175°C and ambient temperatures ranging from -40°C to +125°C.
For a 22 kW onboard EV charger, can SCTH100N120G2-AG handle the switching requirements at high switching frequency?
A 22 kW OBC operating on an 800 V bus with phase currents around 30 A RMS per phase is well within SCTH100N120G2-AG's 100 A and 1200 V ratings with substantial margin. Its SiC gate structure supports switching at 100 kHz or beyond, enabling the power factor correction (PFC) and DC-DC stages to use compact magnetics and achieve total harmonic distortion below 5%, meeting automotive OBC efficiency and EMC requirements.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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