IRF7343TRPBF Infineon MOSFET (N-Channel) (Small Outline Packages) In Stock
Infineon IRF7343TRPBF is a dual MOSFET in an SO-8 package featuring one N-channel and one P-channel device, each rated at 55 V and 4.7 A with 50 mΩ maximum Rds(on). Avalanche-rated with ultra-low resistance for high-efficiency switching in compact designs. Available from authorized distributors with worldwide shipping.
- Manufacturer
- Infineon
- Package
- Small Outline Packages
- Pin Count
- 8
- Lifecycle
- ACTIVE
- Datasheet
- IRF7343TRPBF Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.4251(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of IRF7343TRPBF?
- Dual N/P-channel MOSFET in SO-8 package with separate elements enabling H-bridge and half-bridge motor drive in a single footprint
- 55 V drain-source breakdown voltage with 50 mΩ maximum Rds(on) delivering ultra-low conduction loss at up to 4.7 A drain current
- Avalanche-rated with 72 mJ avalanche energy handling, ensuring robustness against inductive switching transients in real-world applications
What is IRF7343TRPBF used for?
The IRF7343TRPBF is used in H-bridge motor drivers, DC-DC converters, and synchronous rectifiers where a dual complementary MOSFET pair in a single SO-8 package reduces board area and BOM count. It is suitable for battery-powered portable devices, power management modules, and low-voltage motor control circuits operating from 5 V to 55 V rails. Its ultra-low 50 mΩ Rds(on) minimizes conduction losses, making it a strong fit for efficiency-critical switching regulators.
What are the specifications of IRF7343TRPBF?
| YTEOL | 5 |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 72mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55V |
| Drain Current-Max (ID) | 4.7A |
| Drain-source On Resistance-Max | 0.05Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 38A |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Small Outline Packages |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China, Philippines, Thailand, Usa |
Where can I find the IRF7343TRPBF datasheet?
IRF7343TRPBF Datasheet DownloadOfficial datasheet from Infineon
What are equivalent replacements for IRF7343TRPBF?
Compatible alternatives and drop-in replacements for IRF7343TRPBF:
suggested
suggested
suggested
suggested
Frequently Asked Questions
What are the key voltage and current ratings of the IRF7343TRPBF dual MOSFET?
The IRF7343TRPBF is rated for a 55 V drain-source breakdown voltage and a maximum drain current of 4.7 A per channel. Both the N-channel and P-channel elements share these ratings, making the device suitable for symmetrical H-bridge designs operating from supplies up to 50 V with load currents in the low-ampere range.
How does the 50 mΩ Rds(on) of the IRF7343TRPBF benefit a DC-DC converter design?
A maximum Rds(on) of 50 mΩ results in very low conduction losses at 4.7 A, translating to under 1.1 W of power dissipation per channel at full load. This ultra-low resistance improves converter efficiency, reduces heatsinking requirements, and allows the SO-8 package to operate within its thermal limits at typical ambient temperatures of 25°C to 85°C.
Can the IRF7343TRPBF handle inductive load transients in motor control circuits?
Yes. The IRF7343TRPBF is avalanche-rated with a specified avalanche energy (Eas) of 72 mJ, providing robustness against inductive flyback spikes that occur when switching motors or relay coils. This rating ensures the device survives unclamped inductive switching events, reducing the need for external protection components in brushed DC motor drive applications.
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Why Buy from FindMyChip
About Infineon
Infineon is a leading electronic component manufacturer. FindMyChip sources Infineon ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1000 | $2.10 |
| 3+ | $1.6800 | $5.04 |
| 13+ | $1.0500 | $13.65 |
| 500+ | $0.6608 | $330.40 |
| 1000+ | $0.4721 | $472.10 |
| 2500+ | $0.4251 | $1062.75 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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