Transistor IGBT

Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑220FP package

STMicroelectronics STGFW30V60DF is a trench gate field-stop IGBT rated at 600 V and 30 A with an integrated freewheeling diode. Features a single-element isolated TO-3PF package with 60 A max collector current and 20 V gate-emitter voltage. Available in stock with worldwide shipping.

STMicroelectronics STGWT30HP65FB is a 650 V, 30 A trench gate field-stop IGBT in the high-speed HB series with an integrated freewheeling diode. It supports up to 60 A peak collector current in a TO-3P package with a 20 V gate-emitter voltage rating. Available from stock worldwide with fast delivery.

STMicroelectronics STGWA20H65DFB is a trench gate field-stop HB series IGBT rated at 650 V collector-emitter voltage and 20 A continuous collector current with integrated anti-parallel diode. Designed for high-speed switching in TO-247 package for power conversion efficiency. Available from authorized distributors with worldwide shipping.

Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package

STMicroelectronics STGH30H65DFB-2AG is an automotive-grade trench gate field-stop IGBT rated at 650 V and 30 A (60 A pulsed) with 16 ns fall time in an H²PAK-2 package. Integrates a fast built-in diode for high-speed half-bridge switching in EV and industrial motor drives. Available globally with fast delivery.

STMicroelectronics STGB20H65DFB2 is a 650 V, 20 A trench gate field-stop IGBT in a D²PAK (TO-263AB) package with built-in freewheeling diode, optimized for high-speed switching in the HB2 series. Available in stock with worldwide shipping for power conversion designs.

Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ

The STGI25N36LZAG is an automotive-grade 360 V internally clamped IGBT with 25 A collector current, built-in TVS diode and gate resistor, 300 mJ ruggedness rating, and a compact ESCIS vertical package for motor drive applications.

The STGB4M65DF2 is an STMicroelectronics M-series trench gate field-stop IGBT rated at 650 V and 4 A (8 A peak) with integrated built-in anti-parallel diode in a D2PAK package for low-loss switching. Available from stock for worldwide shipping.

PowerMESH IGBT, S series 600 V, 13 A low drop

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package

The STGWT40H65DFB is an N-channel IGBT from STMicroelectronics rated at 650 V collector-emitter voltage and 80 A maximum collector current, with a 283 W power dissipation limit in a through-hole vertical TO-247 style package. It is designed for hard-switching power conversion applications including inverters, motor drives, and UPS systems requiring high-efficiency switching up to 650 V.

STMicroelectronics STGB25N36LZAG is an automotive-grade 360 V internally clamped N-channel IGBT with built-in TVS diode and resistor, rated at 25 A collector current. It offers robust ESD protection and a collector-emitter voltage up to 385 V. Available with worldwide shipping and in stock from authorized distributors.

Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads package

STMicroelectronics STGB40H65FB is a 650 V, 40 A trench gate field-stop IGBT in a D2PAK (TO-263) package, optimized for high-speed switching in motor drives and PFC stages. Available from stock with worldwide shipping.

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

The STGWA80H65FB is a trench gate field-stop N-channel IGBT from STMicroelectronics rated at 650 V and 80 A continuous, with a peak power dissipation of 469 W in a TO-247 package. It belongs to the HB high-speed series optimized for low switching losses in inverter and motor-drive applications.

STMicroelectronics STGF30H65DFB2 is a 650V, 30A trench gate field-stop IGBT with built-in fast-recovery diode in an isolated TO-220FP package. It belongs to the high-speed HB2 series optimized for hard-switching converters with a 50A peak collector current rating. Designed for motor drives, welding inverters, and industrial switching power supplies.

STGB20H65FB2 is an STMicroelectronics 650 V, 20 A trench gate field-stop IGBT from the high-speed HB2 series, with a 40 A peak collector current rating and a maximum gate-emitter threshold voltage of 7 V, packaged in the D²PAK (TO-263AB) for PCB-mount power switching applications.

STMicroelectronics STGP20H65FB2 is a 650 V, 20 A trench gate field-stop IGBT in the HB2 high-speed series housed in a TO-220AB package. Features a 40 A peak collector current, 7 V gate threshold, and optimized switching for hard-switching inverter topologies. Available from authorized distributors with worldwide shipping.

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220 package

The STGB30H65DFB2 is a 650 V, 30 A trench gate field-stop IGBT from STMicroelectronics in the HB2 high-speed series, housed in a D2PAK (TO-263AB) surface-mount package. It includes a built-in anti-parallel diode and is optimized for switching power conversion in motor drives and industrial inverters.

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in TO-3PF and TO-247 long leads packages

STMicroelectronics STGWA40H65DHFB2 is a 650 V, 40 A trench gate field-stop IGBT with integrated anti-parallel diode from the high-speed HB2 series in a TO-247 long-leads package. Rated for up to 72 A peak collector current, it targets motor drives, solar inverters, and uninterruptible power supply designs.

STGIF7CH60TS-X is an STMicroelectronics SLLIMM 2nd series 3-phase inverter power module rated at 10 A and 600 V, integrating short-circuit rugged IGBTs with gate drivers and bootstrap circuitry in a compact 26-pin module for AC motor drives. Available in stock with worldwide shipping.

Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package

Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT

Use the download button to access the STGIK50CH65T schematic symbol, PCB footprint, and 3D model.

Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

STMicroelectronics STGW30NC60KD, IGBT Transistor, 60 A 600 V, 3-Pin TO-247

Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-220 package

Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-220 package

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages

SLLIMM 2nd series IPM, 3-phase inverter, 35 A, 600 V short-circuit rugged IGBT

SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs

SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBTs

SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D²PAK package

SLLIMM - 2nd series IPM, 3-phase inverter, 20 A, 600 V, short‑circuit rugged IGBT

Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package