Transistor IGBT
Transistor IGBT components are essential building blocks in modern electronic systems. FindMyChip sources Transistor IGBT ICs from authorized China distributors with competitive pricing and reliable stock.
229 components
How to Choose Transistor IGBT Components
- 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
- 2Check package footprint and thermal characteristics against your PCB layout constraints.
- 3Confirm lifecycle status and long-term availability for production designs.
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Transistor IGBT Guides & Articles
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
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CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
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ADAQ7768-1 Design Guide for Precision Vibration and Dynamic Signal Measurement
Design ADAQ7768-1 precision data acquisition channels for vibration and dynamic sensing with the right bandwidth, reference, clock, and layout choices.
Jun 30, 2026
AD5204BRZ10 Design Guide for SPI-Controlled Gain and Offset Calibration
Design AD5204BRZ10 digital potentiometer calibration loops with bounded trim span, safe wiper current, clean SPI routing, and reliable startup codes.
Jun 30, 2026
All Transistor IGBT Components
Showing 51–100 of 229
The STGB4M65DF2 is an STMicroelectronics M-series trench gate field-stop IGBT rated at 650 V and 4 A (8 A peak) with integrated built-in anti-parallel diode in a D2PAK package for low-loss switching. Available from stock for worldwide shipping.
PowerMESH IGBT, S series 600 V, 13 A low drop
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package
The STGWT40H65DFB is an N-channel IGBT from STMicroelectronics rated at 650 V collector-emitter voltage and 80 A maximum collector current, with a 283 W power dissipation limit in a through-hole vertical TO-247 style package. It is designed for hard-switching power conversion applications including inverters, motor drives, and UPS systems requiring high-efficiency switching up to 650 V.
STMicroelectronics STGB25N36LZAG is an automotive-grade 360 V internally clamped N-channel IGBT with built-in TVS diode and resistor, rated at 25 A collector current. It offers robust ESD protection and a collector-emitter voltage up to 385 V. Available with worldwide shipping and in stock from authorized distributors.
Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads package
STMicroelectronics STGB40H65FB is a 650 V, 40 A trench gate field-stop IGBT in a D2PAK (TO-263) package, optimized for high-speed switching in motor drives and PFC stages. Available from stock with worldwide shipping.
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
The STGWA80H65FB is a trench gate field-stop N-channel IGBT from STMicroelectronics rated at 650 V and 80 A continuous, with a peak power dissipation of 469 W in a TO-247 package. It belongs to the HB high-speed series optimized for low switching losses in inverter and motor-drive applications.
STMicroelectronics STGF30H65DFB2 is a 650V, 30A trench gate field-stop IGBT with built-in fast-recovery diode in an isolated TO-220FP package. It belongs to the high-speed HB2 series optimized for hard-switching converters with a 50A peak collector current rating. Designed for motor drives, welding inverters, and industrial switching power supplies.
STGB20H65FB2 is an STMicroelectronics 650 V, 20 A trench gate field-stop IGBT from the high-speed HB2 series, with a 40 A peak collector current rating and a maximum gate-emitter threshold voltage of 7 V, packaged in the D²PAK (TO-263AB) for PCB-mount power switching applications.
STMicroelectronics STGP20H65FB2 is a 650 V, 20 A trench gate field-stop IGBT in the HB2 high-speed series housed in a TO-220AB package. Features a 40 A peak collector current, 7 V gate threshold, and optimized switching for hard-switching inverter topologies. Available from authorized distributors with worldwide shipping.
Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220 package
The STGB30H65DFB2 is a 650 V, 30 A trench gate field-stop IGBT from STMicroelectronics in the HB2 high-speed series, housed in a D2PAK (TO-263AB) surface-mount package. It includes a built-in anti-parallel diode and is optimized for switching power conversion in motor drives and industrial inverters.
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in TO-3PF and TO-247 long leads packages
STMicroelectronics STGWA40H65DHFB2 is a 650 V, 40 A trench gate field-stop IGBT with integrated anti-parallel diode from the high-speed HB2 series in a TO-247 long-leads package. Rated for up to 72 A peak collector current, it targets motor drives, solar inverters, and uninterruptible power supply designs.
STGIF7CH60TS-X is an STMicroelectronics SLLIMM 2nd series 3-phase inverter power module rated at 10 A and 600 V, integrating short-circuit rugged IGBTs with gate drivers and bootstrap circuitry in a compact 26-pin module for AC motor drives. Available in stock with worldwide shipping.
Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package
Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package
N-CHANNEL 3A - 600V - DPAK PowerMESH™ IGBT
Use the download button to access the STGIK50CH65T schematic symbol, PCB footprint, and 3D model.
Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package
STMicroelectronics STGW30NC60KD, IGBT Transistor, 60 A 600 V, 3-Pin TO-247
Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-220 package
Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-220 package
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO‑247 long leads package
Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages
SLLIMM 2nd series IPM, 3-phase inverter, 35 A, 600 V short-circuit rugged IGBT
SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBTs
SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D²PAK package
SLLIMM - 2nd series IPM, 3-phase inverter, 20 A, 600 V, short‑circuit rugged IGBT
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package
Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO‑247 long leads package
Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO‑247 long leads package
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package
31 A, 600 V, fast IGBT with UltraFAST diode
SLLIMM 2nd series IPM, 3-phase inverter, 15 A, 600 V short-circuit rugged IGBTs
Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package
The GW35NB60SD is an N-channel PowerMESH IGBT rated at 35 A and 600 V in a TO-247 through-hole package, featuring low collector-emitter saturation voltage for high-efficiency switching. It targets motor drives and inverter applications. Available from stock with worldwide shipping.
N-channel 600 V, 14 A, very fast IGBT
IGBT Transistors PTD IGBT & IPM Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package
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