STGF30H65DFB2 STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGF30H65DFB2 is a 650V, 30A trench gate field-stop IGBT with built-in fast-recovery diode in an isolated TO-220FP package. It belongs to the high-speed HB2 series optimized for hard-switching converters with a 50A peak collector current rating. Designed for motor drives, welding inverters, and industrial switching power supplies.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGF30H65DFB2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.3580(MOQ 4000)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGF30H65DFB2?
- 650V collector-emitter voltage with 30A continuous and 50A peak current rating for robust power switching
- Trench gate field-stop technology for low conduction and switching losses in hard-switching topologies
- Integrated built-in fast-recovery antiparallel diode reducing external diode count
- Isolated TO-220FP package enabling direct heatsink mounting without insulating pads
What is STGF30H65DFB2 used for?
The STGF30H65DFB2 is used in variable-speed motor drives, induction heating inverters, and welding machines operating from 400V AC mains. Its 650V blocking capability and high-speed HB2 characteristics support switching frequencies up to tens of kilohertz with low switching losses. The isolated TO-220FP package simplifies thermal management in industrial power modules.
What are the specifications of STGF30H65DFB2?
| Factory Lead Time | 15Weeks |
| Date Of Intro | 2020-05-25 |
| YTEOL | 0 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 50A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 50W |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 184ns |
| Turn-on Time-Nom (ton) | 27.5ns |
| VCEsat-Max | 2.1V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGF30H65DFB2 datasheet?
STGF30H65DFB2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGF30H65DFB2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the STGF30H65DFB2 for motor drive applications?
The STGF30H65DFB2 is rated for 650V collector-emitter voltage and 30A continuous collector current, with a 50A peak pulse rating. These specifications make it suitable for controlling three-phase motors powered from 400V AC mains in variable frequency drives. The gate threshold voltage is below 7V, allowing direct drive from standard gate drivers.
How does the trench gate field-stop technology in the STGF30H65DFB2 reduce switching losses?
The trench gate field-stop structure of the STGF30H65DFB2 reduces the on-state voltage drop (VCE(sat)) and shortens the tail current during turn-off, lowering switching energy losses compared to planar IGBTs. This allows higher switching frequencies up to tens of kilohertz in hard-switching topologies like half-bridge converters. Reduced losses translate to smaller heatsink requirements in 650V industrial designs.
What advantage does the integrated diode in the STGF30H65DFB2 provide over discrete IGBT configurations?
The STGF30H65DFB2 integrates a fast-recovery antiparallel diode, eliminating the need for an external freewheeling diode in bridge topologies. This reduces component count and PCB area in motor drives and power converters. The diode is co-optimized with the 650V IGBT cell for matched reverse recovery characteristics, minimizing ringing and EMI at switching transitions.
Which industrial power conversion circuits are best matched to the STGF30H65DFB2 HB2 series rating?
The HB2 series STGF30H65DFB2 targets single-phase and three-phase inverter legs in motor drives, induction heaters, and arc-welding power sources with 400V to 480V AC inputs. Its 650V blocking and 30A continuous rating provide a typical 2x derating margin on 400V bus applications. The isolated TO-220FP package enables direct bolt-down to aluminum heatsinks without additional isolation hardware.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 4000+ | $1.3720 | $5488.00 |
| 8000+ | $1.3650 | $10920.00 |
| 16000+ | $1.3580 | $21728.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
IXGH24N170
IXYS SEMICONDUCTOR
Transistor IGBT
ACPL-W341-000E
Avago Technologies
Transistor IGBT
IXYH30N120C3D1
IXYS SEMICONDUCTOR
Transistor IGBT
IXA12IF1200HB
IXYS SEMICONDUCTOR
Transistor IGBT
GT50JR22
Toshiba
Transistor IGBT
GT50J342,Q(O
Toshiba
Transistor IGBT
FGH25T120SMD_F155
ON Semiconductor
Transistor IGBT
AFGHL40T120RWD
onsemi
Transistor IGBT
IRGP4066DPBF
International Rectifier
Transistor IGBT
IRGP4062DPBF
International Rectifier
Transistor IGBT
IRGB4062DPBF
International Rectifier
Transistor IGBT
IRG4PC50UD-EPBF
International Rectifier
Transistor IGBT
NGTB30N120LWG
ON Semiconductor
Transistor IGBT
IRG7PH46UD-EP
Infineon
Transistor IGBT
IRG7PH42UPBF
Infineon
Transistor IGBT
FGI3040G2_F085
ON Semiconductor
Transistor IGBT
FGP3440G2_F085
ON Semiconductor
Transistor IGBT
IRGB20B60PD1PBF
Infineon
Transistor IGBT
IKW50N60T
Infineon
Transistor IGBT
RJH60F0DPQ-A0#T0
Renesas Electronics
Transistor IGBT
IKW30N65ES5
Infineon
Transistor IGBT
IKW75N65ES5
Infineon
Transistor IGBT
IRGS14C40LPBF
International Rectifier
Transistor IGBT
IXBH12N300
IXYS SEMICONDUCTOR
Transistor IGBT