STGB40H65FB STMicroelectronics Transistor IGBT (Other) In Stock
STMicroelectronics STGB40H65FB is a 650 V, 40 A trench gate field-stop IGBT in a D2PAK (TO-263) package, optimized for high-speed switching in motor drives and PFC stages. Available from stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGB40H65FB Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.2522(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V collector-emitter voltage and 40 A continuous collector current (80 A peak) handle high-power switching in 3-phase motor drives and solar inverters
- Trench gate field-stop technology reduces conduction losses and tail current for switching frequencies up to 30 kHz, improving inverter efficiency
- D2PAK (TO-263AB) surface mount package enables high power dissipation on PCB copper pours without requiring a separate heat sink clip
Applications
The STGB40H65FB is designed for high-frequency motor control inverters, power factor correction circuits, and induction heating systems operating from 400 V AC mains where a 650 V rated IGBT is required. Its trench gate field-stop construction delivers a balance of low switching losses and low conduction losses, making it well suited for variable-speed drives, UPS systems, and photovoltaic string inverters in the 1 kW to 5 kW power range.
Specifications
| Manufacturer Package Code | D2PAK |
| YTEOL | 5.82 |
| Additional Feature | BULK: 1000 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 80A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 283W |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 202ns |
| Turn-on Time-Nom (ton) | 52ns |
| VCEsat-Max | 2V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the STGB40H65FB, and which power levels do they support?
The STGB40H65FB is rated at 650 V collector-emitter and 40 A continuous collector current, with a peak of 80 A. These ratings support single-phase and 3-phase inverter designs in the 1 kW to 5 kW range operating from 230 V or 400 V AC mains.
How does the trench gate field-stop technology in the STGB40H65FB improve efficiency at switching frequencies above 10 kHz?
Trench gate field-stop construction reduces gate charge by approximately 30% and minimizes tail current at turn-off compared to standard planar IGBTs, lowering switching losses by up to 25% at 20 kHz, which improves inverter efficiency by 0.5% to 1% in motor drive applications.
What PCB thermal management is needed to run the STGB40H65FB at full 40 A in a D2PAK footprint?
At 40 A continuous, the STGB40H65FB dissipates up to 20 W to 30 W depending on duty cycle. A D2PAK copper pour of at least 25 cm² on a 2 oz copper layer is needed to keep junction temperature below 150°C without an external heat sink, or a clip-on heat sink rated at 5°C/W or better can be used for higher ambient temperatures.
When is the STGB40H65FB preferred over a SiC MOSFET in a 3 kW inverter design?
At switching frequencies below 20 kHz and in cost-sensitive designs, the STGB40H65FB offers lower component cost than a comparable 650 V SiC MOSFET while delivering adequate efficiency. For a 3 kW motor drive at 16 kHz, the IGBT solution can cut component cost by 40% to 60% with less than 0.5% efficiency penalty versus SiC.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.6300 | $3.63 |
| 10+ | $2.5200 | $25.20 |
| 50+ | $2.3800 | $119.00 |
| 100+ | $1.7699 | $176.99 |
| 500+ | $1.4653 | $732.64 |
| 2000+ | $1.2522 | $2504.44 |
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