STGB20H65DFB2 STMicroelectronics Transistor IGBT (Other) In Stock

STMicroelectronics STGB20H65DFB2 is a 650 V, 20 A trench gate field-stop IGBT in a D²PAK (TO-263AB) package with built-in freewheeling diode, optimized for high-speed switching in the HB2 series. Available in stock with worldwide shipping for power conversion designs.

OBSOLETETransistor IGBTVerified Jun 2026
Package / Visual Reference
STGB20H65DFB2Other
Quick Facts
Manufacturer
STMicroelectronics
Package
Other
Pin Count
3
Lifecycle
OBSOLETE
Category
Transistor IGBT
Price
From $1.2416(MOQ 1000)
Temp Range
-55.0°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 650 V collector-emitter voltage and 20 A continuous collector current (40 A peak) in a compact D²PAK (TO-263AB) SMD package
  • Trench gate field-stop technology reduces conduction losses and switching energy for high-efficiency power conversion above 400 V
  • Integrated built-in freewheeling diode eliminates the need for an external antiparallel diode, simplifying PCB layout and reducing BOM count
  • HB2 high-speed series optimized for switching frequencies up to several tens of kHz in PFC and inverter topologies

Applications

The STGB20H65DFB2 is designed for switch-mode power supplies, PFC boost stages, and single-phase inverter bridges operating from 400 V AC mains where 650 V blocking capability and 20 A continuous current are required. Its trench gate field-stop structure and integrated diode make it ideal for air conditioner compressor drives, solar microinverters, and uninterruptible power supplies (UPS) requiring efficient hard-switching or soft-switching operation. The D²PAK surface-mount package facilitates automated assembly in motor control boards and industrial power modules where heatsink attachment to the PCB is advantageous.

Specifications

Factory Lead Time15Weeks
Date Of Intro2020-05-07
YTEOL0
Case ConnectionCOLLECTOR
Collector Current-Max (IC)40A
Collector-Emitter Voltage-Max650V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max7V
Gate-Emitter Voltage-Max20V
JEDEC-95 CodeTO-263AB
JESD-30 CodeR-PSSO-G2
JESD-609 Codee3
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Peak Reflow Temperature (Cel)245
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)147W
Surface MountYES
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationPOWER CONTROL
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)178ns
Turn-on Time-Nom (ton)26ns
VCEsat-Max2.1V
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
Moisture Sensitivity LevelMSL 1
ECCNEAR99
Country of OriginMainland China

Datasheet

STGB20H65DFB2 Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for STGB20H65DFB2:

STGB20H65FB2STMicroelectronics

Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, TO-263AB

View Part →

Frequently Asked Questions

What are the critical voltage and current ratings of the STGB20H65DFB2, and how do they map to typical AC mains applications?

The STGB20H65DFB2 is rated at 650 V collector-emitter voltage and 20 A continuous collector current, with a peak rating of 40 A. These specifications make it directly suitable for 230 V AC single-phase or 400 V AC three-phase industrial applications, providing the necessary voltage margin above the rectified bus voltage of approximately 325 V to 560 V.

How does the built-in freewheeling diode in the STGB20H65DFB2 affect circuit design for H-bridge or inverter topologies?

The integrated antiparallel freewheeling diode in the STGB20H65DFB2 eliminates the need for a separate external diode in each switch position of an H-bridge or half-bridge inverter, reducing the discrete component count by at least 1 diode per switch position. This lowers BOM cost, simplifies PCB routing, and decreases parasitic inductance in high-current 650 V switching paths.

Which power conversion topologies are best matched to the STGB20H65DFB2's HB2 high-speed characteristics?

The HB2 series designation indicates optimized performance in hard-switching topologies such as boost PFC converters, single-phase full-bridge inverters, and half-bridge DC-AC stages operating at switching frequencies typically between 16 kHz and 40 kHz. The trench gate field-stop technology delivers reduced turn-off energy (Eoff) at 650 V, which is critical for maintaining high efficiency in motor drive inverters and solar microinverters processing continuous loads of 20 A.

What thermal and package characteristics does the D²PAK (TO-263AB) format provide for the STGB20H65DFB2 in SMT designs?

The D²PAK (TO-263AB) package provides a large exposed copper tab on the bottom that solders directly to the PCB for thermal dissipation, with a junction-to-case thermal resistance (RθJC) typically around 1 °C/W, supporting power dissipation up to approximately 100 W when mounted on a 1 oz copper pour. The surface-mount format suits automated reflow assembly while also allowing a PCB-top heatsink clip for higher continuous power in 650 V, 20 A IGBT applications.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $1.2416
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1000+$1.4100$1410.00
2000+$1.3100$2620.00
4000+$1.2544$5017.60
8000+$1.2480$9984.00
16000+$1.2416$19865.60
pcs
Unit price: $1.4100 · Total: $1410.00

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy