STGB30H65DFB2 STMicroelectronics Transistor IGBT (Other) In Stock
The STGB30H65DFB2 is a 650 V, 30 A trench gate field-stop IGBT from STMicroelectronics in the HB2 high-speed series, housed in a D2PAK (TO-263AB) surface-mount package. It includes a built-in anti-parallel diode and is optimized for switching power conversion in motor drives and industrial inverters.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGB30H65DFB2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $0.8154(MOQ 10)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V collector-emitter voltage for high-voltage power conversion designs
- 30 A continuous collector current (50 A peak) for robust motor drive output stages
- Trench gate field-stop technology for low switching losses and high efficiency
- Built-in anti-parallel freewheeling diode eliminates external diode component
- D2PAK (TO-263AB) surface-mount package for automated PCB assembly
- HB2 high-speed series optimized for switching frequencies above 20 kHz
Applications
The STGB30H65DFB2 is targeted at three-phase inverter output stages, industrial motor drives, and uninterruptible power supply circuits operating from 400 V AC mains. Its trench gate field-stop construction reduces switching losses at high frequencies, making it effective in solar inverters and EV onboard chargers where efficiency above 98% is a system requirement. The integrated freewheeling diode simplifies half-bridge and full-bridge topologies by reducing component count and board area.
Specifications
| Factory Lead Time | 15Weeks |
| Date Of Intro | 2020-04-07 |
| YTEOL | 5.82 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 50A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 167W |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 184ns |
| Turn-on Time-Nom (ton) | 27.5ns |
| VCEsat-Max | 2.1V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| Moisture Sensitivity Level | MSL 1 |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What switching frequency range is STGB30H65DFB2 optimized for, and how does HB2 series affect inverter efficiency?
The STGB30H65DFB2 belongs to the HB2 high-speed IGBT series, designed for switching frequencies typically in the range of 20 kHz to 40 kHz. The trench gate field-stop structure reduces both turn-on and turn-off switching energy, directly improving inverter efficiency in 3-phase motor drives operating from a 400 V DC bus.
Does STGB30H65DFB2 include a freewheeling diode, and how does this simplify half-bridge IGBT designs?
Yes. The STGB30H65DFB2 integrates a built-in anti-parallel freewheeling diode rated for the same current path. In a half-bridge topology with 2 IGBTs, this eliminates 2 external discrete diodes, reducing component count, board area, and parasitic inductance in the commutation loop, which directly lowers voltage overshoot across the 650 V rated device.
How does the D2PAK package of STGB30H65DFB2 affect thermal management versus a TO-220 through-hole variant?
The STGB30H65DFB2 uses a D2PAK (TO-263AB) surface-mount package, which allows soldering directly to the PCB with the exposed metal tab transferring heat to a copper pour or external heatsink. Compared to TO-220, the D2PAK eliminates the mounting hardware and insulating pad while maintaining similar junction-to-case thermal resistance for the 50 A peak collector current.
What gate drive voltage is required to fully enhance STGB30H65DFB2 in a motor inverter gate driver circuit?
The STGB30H65DFB2 has a gate-emitter threshold voltage of up to 7 V and a maximum gate-emitter voltage rating of 20 V. Standard gate driver designs apply +15 V for full turn-on and a negative voltage of -8 V to -15 V for turn-off to ensure fast switching and robust noise immunity in high-dv/dt motor drive environments.
Related Guides
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
ADAQ7768-1 Design Guide for Precision Vibration and Dynamic Signal Measurement
Design ADAQ7768-1 precision data acquisition channels for vibration and dynamic sensing with the right bandwidth, reference, clock, and layout choices.
Jun 30, 2026
AD5204BRZ10 Design Guide for SPI-Controlled Gain and Offset Calibration
Design AD5204BRZ10 digital potentiometer calibration loops with bounded trim span, safe wiper current, clean SPI routing, and reliable startup codes.
Jun 30, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.9050 | $19.05 |
| 25+ | $1.6000 | $40.00 |
| 100+ | $1.3108 | $131.08 |
| 500+ | $1.0566 | $528.31 |
| 3000+ | $0.8713 | $2613.84 |
| 4000+ | $0.8154 | $3261.72 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”