STGWA40H65DHFB2 STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGWA40H65DHFB2 is a 650 V, 40 A trench gate field-stop IGBT with integrated anti-parallel diode from the high-speed HB2 series in a TO-247 long-leads package. Rated for up to 72 A peak collector current, it targets motor drives, solar inverters, and uninterruptible power supply designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGWA40H65DHFB2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.4019(MOQ 10)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V, 40 A continuous collector current with 72 A peak rating for high-power switching
- Trench gate field-stop technology for low on-state voltage and reduced conduction losses
- Integrated anti-parallel freewheeling diode eliminates external diode for simplified circuit design
- TO-247 long-leads package enables direct heatsink mounting for efficient thermal management
- HB2 series high-speed switching optimized for inverter frequencies from 8 kHz to 30 kHz
Applications
The STGWA40H65DHFB2 is used in 3-phase motor drives, solar string inverters, and industrial UPS systems where 650 V blocking capability and low switching losses at 40 A are required. Its integrated diode and TO-247 package simplify power module assembly in welding machines, air-conditioning compressor drives, and PFC boost stages.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 0 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 72A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 230W |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 183ns |
| Turn-on Time-Nom (ton) | 24.6ns |
| VCEsat-Max | 2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the trench gate field-stop structure in the STGWA40H65DHFB2 reduce conduction losses versus planar IGBTs?
The trench gate field-stop design allows a thinner drift region and lower collector-emitter saturation voltage (VCEsat) compared with planar IGBT structures, typically achieving VCEsat below 2 V at 40 A and 25°C. This reduces power dissipation in continuous-conduction inverter stages, improving system efficiency at switching frequencies of 8 kHz to 20 kHz.
What is the peak collector current rating of the STGWA40H65DHFB2 and how does it affect short-circuit protection design?
The STGWA40H65DHFB2 has a peak collector current rating of 72 A, which is 1.8 times its 40 A continuous rating. Gate drive circuits should be designed with a short-circuit withstand time of at least 5 µs and a VGE of 15 V to ensure the IGBT survives fault conditions before the protection circuitry clamps the gate.
Can the STGWA40H65DHFB2 be used directly in a 400 V DC bus three-phase inverter for motor control?
Yes. The 650 V collector-emitter breakdown voltage provides adequate margin above a 400 V DC bus, accounting for derating and voltage spikes up to 50% above bus voltage. The integrated anti-parallel diode handles freewheeling current in each phase leg without external components, making the TO-247 package suitable for standard through-hole power stage assembly.
What gate-emitter drive voltage is recommended for the STGWA40H65DHFB2 and what is the threshold voltage range?
The recommended gate drive is +15 V for turn-on and -5 V to 0 V for turn-off to ensure low VCEsat and reliable switching. The gate-emitter threshold voltage is specified up to 7 V maximum, and the gate-emitter voltage absolute maximum is 20 V, so the gate drive circuit should stay within the -5 V to +15 V operating range to avoid gate oxide stress.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.4500 | $34.50 |
| 100+ | $2.8200 | $282.00 |
| 250+ | $2.6800 | $670.00 |
| 2400+ | $1.4467 | $3472.18 |
| 4800+ | $1.4243 | $6836.69 |
| 9600+ | $1.4019 | $13458.05 |
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