STGWA40H65DHFB2 STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGWA40H65DHFB2 is a 650 V, 40 A trench gate field-stop IGBT with integrated anti-parallel diode from the high-speed HB2 series in a TO-247 long-leads package. Rated for up to 72 A peak collector current, it targets motor drives, solar inverters, and uninterruptible power supply designs.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGWA40H65DHFB2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.4019(MOQ 10)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGWA40H65DHFB2?
- 650 V, 40 A continuous collector current with 72 A peak rating for high-power switching
- Trench gate field-stop technology for low on-state voltage and reduced conduction losses
- Integrated anti-parallel freewheeling diode eliminates external diode for simplified circuit design
- TO-247 long-leads package enables direct heatsink mounting for efficient thermal management
- HB2 series high-speed switching optimized for inverter frequencies from 8 kHz to 30 kHz
What is STGWA40H65DHFB2 used for?
The STGWA40H65DHFB2 is used in 3-phase motor drives, solar string inverters, and industrial UPS systems where 650 V blocking capability and low switching losses at 40 A are required. Its integrated diode and TO-247 package simplify power module assembly in welding machines, air-conditioning compressor drives, and PFC boost stages.
What are the specifications of STGWA40H65DHFB2?
| Factory Lead Time | 15Weeks |
| YTEOL | 0 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 72A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 230W |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 183ns |
| Turn-on Time-Nom (ton) | 24.6ns |
| VCEsat-Max | 2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGWA40H65DHFB2 datasheet?
STGWA40H65DHFB2 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGWA40H65DHFB2?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the trench gate field-stop structure in the STGWA40H65DHFB2 reduce conduction losses versus planar IGBTs?
The trench gate field-stop design allows a thinner drift region and lower collector-emitter saturation voltage (VCEsat) compared with planar IGBT structures, typically achieving VCEsat below 2 V at 40 A and 25°C. This reduces power dissipation in continuous-conduction inverter stages, improving system efficiency at switching frequencies of 8 kHz to 20 kHz.
What is the peak collector current rating of the STGWA40H65DHFB2 and how does it affect short-circuit protection design?
The STGWA40H65DHFB2 has a peak collector current rating of 72 A, which is 1.8 times its 40 A continuous rating. Gate drive circuits should be designed with a short-circuit withstand time of at least 5 µs and a VGE of 15 V to ensure the IGBT survives fault conditions before the protection circuitry clamps the gate.
Can the STGWA40H65DHFB2 be used directly in a 400 V DC bus three-phase inverter for motor control?
Yes. The 650 V collector-emitter breakdown voltage provides adequate margin above a 400 V DC bus, accounting for derating and voltage spikes up to 50% above bus voltage. The integrated anti-parallel diode handles freewheeling current in each phase leg without external components, making the TO-247 package suitable for standard through-hole power stage assembly.
What gate-emitter drive voltage is recommended for the STGWA40H65DHFB2 and what is the threshold voltage range?
The recommended gate drive is +15 V for turn-on and -5 V to 0 V for turn-off to ensure low VCEsat and reliable switching. The gate-emitter threshold voltage is specified up to 7 V maximum, and the gate-emitter voltage absolute maximum is 20 V, so the gate drive circuit should stay within the -5 V to +15 V operating range to avoid gate oxide stress.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $3.4500 | $34.50 |
| 100+ | $2.8200 | $282.00 |
| 250+ | $2.6800 | $670.00 |
| 2400+ | $1.4467 | $3472.18 |
| 4800+ | $1.4243 | $6836.69 |
| 9600+ | $1.4019 | $13458.05 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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