Transistor IGBT

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package

ROHS COMPLIANT PACKAGE-3

19 A, 600 V, very fast IGBT with ultra-fast diode

Use the download button to access the STGW60V60DF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STGW60H65DFB schematic symbol, PCB footprint, and 3D model.

The STGW40V60DF is a single N-channel IGBT from STMicroelectronics with an integrated fast recovery diode, rated at 600V collector-emitter voltage and 80A continuous collector current in a TO-247 package. Designed for high-efficiency power switching, it offers low saturation voltage and excellent EMI performance. Available from major distributors worldwide with fast shipping options.

The STGW80V60DF is an N-channel IGBT transistor rated at 600 V collector-emitter voltage and 120 A continuous collector current with 469 W maximum power dissipation. It integrates a fast soft-recovery co-packaged diode optimized for hard-switching power conversion. This TO-247 through-hole device targets high-efficiency motor drives, PFC converters, and solar inverter applications.

The STGW60V60DLF is a high-performance IGBT from STMicroelectronics rated at 60 A and 600 V in a TO-247 package. It delivers low saturation voltage and fast switching for energy-efficient power conversion. Available from stock worldwide with competitive pricing for industrial and consumer applications.

The STGW30NC120HD is a single N-channel IGBT with a built-in anti-parallel diode from STMicroelectronics, rated at 1200V collector-emitter voltage and 60A maximum collector current. It features a gate-emitter threshold voltage of up to 5.75V and maximum gate-emitter voltage of 25V for robust switching performance. Housed in a TO-247 through-hole package, it is designed for high-power inverter, motor drive, and industrial switching applications.

STMicroelectronics STGW40N120KD IGBT, 80 A 1200 V, 3-Pin TO-247

STMICROELECTRONICS - STGW80H65DFB - IGBT, SINGLE, 650V, 120A, TO-247

Use the download button to access the STGW20V60DF schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STGW30NC60WD schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STGW39NC60VD schematic symbol, PCB footprint, and 3D model.

ROHS COMPLIANT, LEAD FREE, TO-247, 3 PIN

Use the download button to access the STGW30V60F schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STGP40V60F schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STGF10NC60KD schematic symbol, PCB footprint, and 3D model.

STMICROELECTRONICS - STGF20H60DF - IGBT, SINGLE, 600V, 40A, TO-220FP

STMICROELECTRONICS - STGD18N40LZT4 - IGBT Single Transistor, 25 A, 1.35 V, 125 W, 390 V, TO-252 (DPAK), 3 Pins

Trench gate field-stop, 600 V, 60 A, very high speed, V series IGBT in a TO-247 package

The STGY40NC60VD is an N-channel IGBT transistor rated at 600V collector-emitter voltage and 80A maximum collector current with a built-in freewheeling diode in a 3-pin MAX247 package. It features a 5.75V maximum gate-emitter threshold voltage and 20V gate drive rating for reliable high-power switching. Available from stock worldwide at competitive prices.

STMicroelectronics STGW20NC60VD is an ultra-fast N-channel IGBT rated at 600 V collector-emitter voltage and 60 A collector current with a built-in anti-parallel diode, housed in a 3-pin TO-247 through-hole package. Designed for high-frequency inverter and motor drive switching applications.

The STGP6NC60HD is an N-channel IGBT rated at 600 V collector-emitter voltage and 15 A continuous collector current. It integrates a built-in fast recovery antiparallel diode and features a maximum gate-emitter threshold voltage of 5.75 V with a 20 V gate oxide limit. Housed in a TO-220AB package, it targets motor drive inverters, switch-mode power supplies, and induction heating applications operating from mains voltage.

Use the download button to access the STGP7NC60HD schematic symbol, PCB footprint, and 3D model.

STGP14NC60KD is a single N-channel IGBT from STMicroelectronics rated at 25 A collector current and 600 V collector-emitter voltage, with an integrated anti-parallel diode in a 3-pin TO-220AB package. It features ultra-fast switching optimized for high-frequency inverter applications. The device targets motor drive inverters, UPS systems, and induction heating equipment operating at switching frequencies up to tens of kilohertz.

Use the download button to access the STGP10NC60KD schematic symbol, PCB footprint, and 3D model.

The STGD10NC60KDT4 is a 600 V, 10 A N-channel IGBT with short-circuit ruggedness from STMicroelectronics, packaged in a surface-mount DPAK. It integrates a built-in anti-parallel diode and operates across a -55 °C to 150 °C junction temperature range, dissipating up to 62 W. Designed for switched-mode power supplies, motor drives, and low-frequency inverter applications.

IGBT Transistors 20 A - 600 V - short circuit rugged IGBT