STGWA20H65DFB STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGWA20H65DFB is a trench gate field-stop HB series IGBT rated at 650 V collector-emitter voltage and 20 A continuous collector current with integrated anti-parallel diode. Designed for high-speed switching in TO-247 package for power conversion efficiency. Available from authorized distributors with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWA20H65DFB Datasheet PDF
- Category
- Transistor IGBT
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGWA20H65DFB?
- 650 V / 20 A (40 A pulsed) trench gate field-stop IGBT optimized for high-speed switching in power conversion stages
- Integrated built-in anti-parallel diode eliminates external freewheeling diode, reducing BOM count and PCB area
- TO-247 through-hole package with low thermal resistance enables efficient heat dissipation in motor drive and inverter designs
What is STGWA20H65DFB used for?
The STGWA20H65DFB is used in single-phase and three-phase inverter stages for solar power systems, UPS, and industrial motor drives operating from 400 V AC mains. Its 650 V blocking voltage and 20 A continuous current rating cover the high-side and low-side switch positions in half-bridge and full-bridge topologies. The integrated diode and high-speed switching characteristics support switching frequencies up to several tens of kHz with reduced switching losses.
What are the specifications of STGWA20H65DFB?
| YTEOL | 5.35 |
| Collector Current-Max (IC) | 40A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 168W |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 185ns |
| Turn-on Time-Nom (ton) | 51.4ns |
| VCEsat-Max | 2V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGWA20H65DFB datasheet?
STGWA20H65DFB Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGWA20H65DFB?
Compatible alternatives and drop-in replacements for STGWA20H65DFB:
Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, TO-247
Frequently Asked Questions
What are the key voltage and current ratings of the STGWA20H65DFB IGBT?
The STGWA20H65DFB is rated for 650 V collector-emitter voltage and 20 A continuous collector current (40 A pulsed peak), with a maximum gate-emitter voltage of 20 V and gate threshold voltage up to 7 V, making it suitable for 400 V AC mains power conversion stages.
In which power conversion topologies can the STGWA20H65DFB be used as a half-bridge switch?
The STGWA20H65DFB can operate as the high-side or low-side switch in half-bridge and full-bridge inverter topologies for solar grid-tie inverters, UPS systems, and industrial motor drives. Its 650 V blocking voltage covers the DC bus voltages derived from 400 V three-phase mains, and the integrated anti-parallel diode handles freewheeling current during dead-time intervals.
How does the TO-247 package of the STGWA20H65DFB support thermal management in a motor drive design?
The TO-247 package provides a large exposed metal tab with low junction-to-case thermal resistance, typically around 0.5 °C/W, enabling direct mounting to a heatsink or cold plate. This allows the STGWA20H65DFB to dissipate the switching and conduction losses generated at 20 A through-current without exceeding the 150 °C maximum junction temperature in typical motor drive enclosures.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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