STGWA80H65FB STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGWA80H65FB is a trench gate field-stop N-channel IGBT from STMicroelectronics rated at 650 V and 80 A continuous, with a peak power dissipation of 469 W in a TO-247 package. It belongs to the HB high-speed series optimized for low switching losses in inverter and motor-drive applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWA80H65FB Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $2.2461(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGWA80H65FB?
- 650 V collector-emitter voltage supporting standard industrial and residential inverter bus voltages
- 80 A continuous / 120 A peak collector current for high-power motor-drive and inverter stages
- Trench gate field-stop structure minimizing on-state voltage drop and switching energy losses
- 469 W maximum power dissipation enabling sustained high-frequency operation with proper heatsinking
- HB high-speed series optimized for switching frequencies up to 30 kHz in hard-switching topologies
- TO-247 through-hole package with low thermal resistance for direct heatsink mounting in power modules
What is STGWA80H65FB used for?
The STGWA80H65FB is used in three-phase motor inverters, UPS systems, solar inverters, and induction heating equipment where a 650 V, high-speed IGBT is required for efficient switching at tens of kilohertz. Its 80 A rating and 469 W dissipation also suit welding power supplies and industrial servo drives that demand both high peak current and robust thermal performance.
What are the specifications of STGWA80H65FB?
| Factory Lead Time | 15Weeks |
| YTEOL | 6 |
| Collector Current-Max (IC) | 120A |
| Collector-Emitter Voltage-Max | 650V |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 469W |
| Surface Mount | NO |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGWA80H65FB datasheet?
STGWA80H65FB Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGWA80H65FB?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the trench gate field-stop structure in STGWA80H65FB reduce switching losses compared to a planar IGBT?
The trench gate structure in STGWA80H65FB reduces the cell pitch and on-state saturation voltage (VCE(sat)) compared to planar IGBTs of the same current rating. The field-stop layer controls the plasma tail during turn-off, shortening the current fall time and cutting turn-off energy (Eoff) by 20–40% versus older NPT designs, which lowers heat generated per switching cycle at frequencies above 10 kHz.
For a 15 kW solar inverter operating on a 400 V AC grid, how does STGWA80H65FB's 650 V rating provide design margin?
A 400 V AC grid presents a DC bus of approximately 560 V after rectification. STGWA80H65FB's 650 V collector-emitter rating provides about 90 V of headroom above that nominal bus, which absorbs switching transient voltage spikes without avalanche breakdown, reducing the gate-driver snubber complexity and improving reliability in single-phase and three-phase string inverters.
What peak collector current and power dissipation does STGWA80H65FB support for motor-drive fault-ride-through scenarios?
STGWA80H65FB is rated for a peak collector current of 120 A and a maximum power dissipation of 469 W. During a motor-drive fault-ride-through event, the IGBT must carry short-duration current surges above the continuous 80 A rating; the 120 A peak capability and 10 µs short-circuit withstand specification (typical for HB series) allow the gate driver to detect and shut down the fault before the device is damaged.
How does the TO-247 package of STGWA80H65FB affect thermal management choices, and what heatsink is typically required?
The TO-247 package provides a large exposed metal tab directly connecting the IGBT die to a heatsink via an M3 or M4 screw. With a junction-to-case thermal resistance (Rth(j-c)) of approximately 0.25°C/W for an 80 A device, maintaining the junction below 150°C at full 469 W dissipation requires a heatsink with a case-to-ambient resistance below 0.05°C/W, achievable with a medium-sized aluminum extrusion and forced-air cooling.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.0000 | $6.00 |
| 5+ | $3.1063 | $15.53 |
| 20+ | $2.3894 | $47.79 |
| 50+ | $2.2461 | $112.31 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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