STGWA80H65FB STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGWA80H65FB is a trench gate field-stop N-channel IGBT from STMicroelectronics rated at 650 V and 80 A continuous, with a peak power dissipation of 469 W in a TO-247 package. It belongs to the HB high-speed series optimized for low switching losses in inverter and motor-drive applications.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWA80H65FB Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $2.2461(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V collector-emitter voltage supporting standard industrial and residential inverter bus voltages
- 80 A continuous / 120 A peak collector current for high-power motor-drive and inverter stages
- Trench gate field-stop structure minimizing on-state voltage drop and switching energy losses
- 469 W maximum power dissipation enabling sustained high-frequency operation with proper heatsinking
- HB high-speed series optimized for switching frequencies up to 30 kHz in hard-switching topologies
- TO-247 through-hole package with low thermal resistance for direct heatsink mounting in power modules
Applications
The STGWA80H65FB is used in three-phase motor inverters, UPS systems, solar inverters, and induction heating equipment where a 650 V, high-speed IGBT is required for efficient switching at tens of kilohertz. Its 80 A rating and 469 W dissipation also suit welding power supplies and industrial servo drives that demand both high peak current and robust thermal performance.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 6 |
| Collector Current-Max (IC) | 120A |
| Collector-Emitter Voltage-Max | 650V |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 469W |
| Surface Mount | NO |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
How does the trench gate field-stop structure in STGWA80H65FB reduce switching losses compared to a planar IGBT?
The trench gate structure in STGWA80H65FB reduces the cell pitch and on-state saturation voltage (VCE(sat)) compared to planar IGBTs of the same current rating. The field-stop layer controls the plasma tail during turn-off, shortening the current fall time and cutting turn-off energy (Eoff) by 20–40% versus older NPT designs, which lowers heat generated per switching cycle at frequencies above 10 kHz.
For a 15 kW solar inverter operating on a 400 V AC grid, how does STGWA80H65FB's 650 V rating provide design margin?
A 400 V AC grid presents a DC bus of approximately 560 V after rectification. STGWA80H65FB's 650 V collector-emitter rating provides about 90 V of headroom above that nominal bus, which absorbs switching transient voltage spikes without avalanche breakdown, reducing the gate-driver snubber complexity and improving reliability in single-phase and three-phase string inverters.
What peak collector current and power dissipation does STGWA80H65FB support for motor-drive fault-ride-through scenarios?
STGWA80H65FB is rated for a peak collector current of 120 A and a maximum power dissipation of 469 W. During a motor-drive fault-ride-through event, the IGBT must carry short-duration current surges above the continuous 80 A rating; the 120 A peak capability and 10 µs short-circuit withstand specification (typical for HB series) allow the gate driver to detect and shut down the fault before the device is damaged.
How does the TO-247 package of STGWA80H65FB affect thermal management choices, and what heatsink is typically required?
The TO-247 package provides a large exposed metal tab directly connecting the IGBT die to a heatsink via an M3 or M4 screw. With a junction-to-case thermal resistance (Rth(j-c)) of approximately 0.25°C/W for an 80 A device, maintaining the junction below 150°C at full 469 W dissipation requires a heatsink with a case-to-ambient resistance below 0.05°C/W, achievable with a medium-sized aluminum extrusion and forced-air cooling.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.0000 | $6.00 |
| 5+ | $3.1063 | $15.53 |
| 20+ | $2.3894 | $47.79 |
| 50+ | $2.2461 | $112.31 |
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