STGFW30V60DF STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
STMicroelectronics STGFW30V60DF is a trench gate field-stop IGBT rated at 600 V and 30 A with an integrated freewheeling diode. Features a single-element isolated TO-3PF package with 60 A max collector current and 20 V gate-emitter voltage. Available in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STGFW30V60DF Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.4188(MOQ 1)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 600 V collector-emitter breakdown voltage with 30 A continuous collector current for high-power switching applications
- Trench gate field-stop technology delivering very high switching speed and reduced switching losses versus planar IGBTs
- Integrated anti-parallel freewheeling diode in a single package eliminating external diode in half-bridge and full-bridge topologies
- Isolated TO-3PF (ISOTOP) package simplifying heatsink mounting without electrical isolation pads
Applications
The STGFW30V60DF is designed for motor drive inverters, solar inverters, and uninterruptible power supplies (UPS) operating from 400 V AC mains where fast switching at 600 V enables high-efficiency power conversion. Its integrated freewheeling diode and isolated package simplify half-bridge and full-bridge circuit designs by reducing component count and thermal management complexity. The very high speed switching characteristics make it suitable for induction heating, welding equipment, and switched-mode power supply topologies up to tens of kilohertz.
Specifications
| YTEOL | 0 |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 60A |
| Collector-Emitter Voltage-Max | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 58W |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 225ns |
| Turn-on Time-Nom (ton) | 59ns |
| VCEsat-Max | 2.3V |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | South Korea |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the maximum voltage and current ratings of the STGFW30V60DF?
The STGFW30V60DF is rated for a 600 V collector-emitter voltage maximum and a 30 A continuous collector current, with a peak pulsed collector current of 60 A. The gate-emitter voltage must not exceed 20 V, and the threshold voltage for turn-on is below 7 V, enabling standard gate-drive circuits.
How does the integrated freewheeling diode benefit motor drive designs using STGFW30V60DF?
The built-in anti-parallel diode eliminates the need for an external fast-recovery diode in each half-bridge leg, reducing bill-of-materials count by 1 diode per switch position. In a 3-phase motor drive operating at 400 V DC bus and 10 kHz PWM, this saves PCB space and lowers assembly cost while maintaining soft-recovery diode characteristics that reduce EMI noise.
For which power conversion topologies is the STGFW30V60DF most appropriate?
With its 600 V rating, very high switching speed, and integrated diode, the STGFW30V60DF suits half-bridge, full-bridge, and 3-phase inverter topologies in motor drives rated up to 5 kW, solar microinverters at 230 V AC output, and UPS systems. Switching frequencies up to 20 kHz are achievable with the trench gate field-stop structure's low switching energy.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.8000 | $3.80 |
| 10+ | $2.4900 | $24.90 |
| 100+ | $1.8300 | $183.00 |
| 600+ | $1.4188 | $851.30 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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