STGWT40H65DFB STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock
The STGWT40H65DFB is an N-channel IGBT from STMicroelectronics rated at 650 V collector-emitter voltage and 80 A maximum collector current, with a 283 W power dissipation limit in a through-hole vertical TO-247 style package. It is designed for hard-switching power conversion applications including inverters, motor drives, and UPS systems requiring high-efficiency switching up to 650 V.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGWT40H65DFB Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.5025(MOQ 1)
- Temp Range
- ?°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V VCES and 80 A IC rating for high-power switch-mode and motor-drive applications
- 283 W maximum power dissipation supported by large TO-247 through-hole package and heatsink mounting
- 20 V gate-emitter voltage maximum enabling standard IGBT gate driver compatibility
- N-channel type for straightforward high-side and low-side switch topologies in H-bridge designs
- JESD-609 e3 rating confirms Pb-free, RoHS-compliant construction
- YTEOL of 6 years indicating active production availability for industrial power converter designs
Applications
The STGWT40H65DFB is used in three-phase motor inverters, solar-panel string inverters, and industrial servo drives where its 650 V / 80 A capability handles the high bus voltages and peak currents characteristic of 400 V AC mains-fed power stages. It also suits UPS, welding equipment, and induction heating power supplies that require robust switching performance and reliable heatsink mounting in demanding 283 W continuous dissipation environments.
Specifications
| Factory Lead Time | 15Weeks |
| YTEOL | 6 |
| Collector Current-Max (IC) | 80A |
| Collector-Emitter Voltage-Max | 650V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-609 Code | e3 |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 283W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | South Korea |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the STGWT40H65DFB, and which inverter topologies can it support?
The STGWT40H65DFB is rated for 650 V collector-emitter voltage and 80 A maximum collector current, with a 20 V gate-emitter voltage limit. These ratings are well matched to half-bridge and full-bridge inverter topologies operating from 400 V AC rectified bus rails, covering single-phase and three-phase motor drives up to approximately 20 kW.
How should the STGWT40H65DFB be thermally managed given its 283 W maximum power dissipation?
The device is packaged in a through-hole vertical TO-247-style case that mounts directly to an external heatsink via a bolt or clip. To dissipate the full 283 W at maximum current, the heatsink thermal resistance must be low enough to keep the junction below the maximum rated temperature; a heatsink with thermal resistance below 0.3 °C/W is typically required when derating is not possible.
Is the STGWT40H65DFB compatible with standard IGBT gate driver ICs, and what gate voltage does it require?
Yes. The gate-emitter voltage maximum is 20 V, which is fully compatible with common IGBT gate driver ICs that deliver +15 V / -5 V or +15 V / -8 V gate drives. The positive 15 V gate-on voltage provides adequate saturation voltage reduction, while the negative turn-off voltage helps suppress parasitic turn-on in bridge configurations operating at high dV/dt.
What is the lead time and lifecycle outlook for the STGWT40H65DFB in industrial power design programs?
The factory lead time is 15 weeks, and the YTEOL indicator is 6 years, confirming the part remains in active production. Industrial power converter programs that expect 5-year production runs can design in the STGWT40H65DFB with reasonable confidence, but a safety stock buffer of at least 16 weeks is advisable to absorb lead-time variability for this discrete through-hole power device.
Related Guides
CL31A107MQHNNNE 1206 100 uF MLCC Selection Guide
How to choose CL31A107MQHNNNE and related 1206 MLCCs for low-voltage bulk capacitance and regulator stability.
Jul 2, 2026
CL05B103KB5NNNC 0402 10 nF X7R MLCC Selection Guide
How to choose CL05B103KB5NNNC and related 0402 MLCCs for bypassing, filtering, voltage derating, and sourcing.
Jul 2, 2026
ADAQ7768-1 Design Guide for Precision Vibration and Dynamic Signal Measurement
Design ADAQ7768-1 precision data acquisition channels for vibration and dynamic sensing with the right bandwidth, reference, clock, and layout choices.
Jun 30, 2026
AD5204BRZ10 Design Guide for SPI-Controlled Gain and Offset Calibration
Design AD5204BRZ10 digital potentiometer calibration loops with bounded trim span, safe wiper current, clean SPI routing, and reliable startup codes.
Jun 30, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.3900 | $4.39 |
| 3+ | $1.5430 | $4.63 |
| 4800+ | $1.5298 | $7343.14 |
| 9600+ | $1.5025 | $14424.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”