STGI25N36LZAG STMicroelectronics Transistor IGBT (Transistor Outline, Vertical) In Stock

The STGI25N36LZAG is an automotive-grade 360 V internally clamped IGBT with 25 A collector current, built-in TVS diode and gate resistor, 300 mJ ruggedness rating, and a compact ESCIS vertical package for motor drive applications.

ACTIVETransistor IGBTVerified Jun 2026
Package / Visual Reference
STGI25N36LZAGTransistor Outline, Vertical
Quick Facts
Manufacturer
STMicroelectronics
Package
Transistor Outline, Vertical
Pin Count
3
Lifecycle
ACTIVE
Category
Transistor IGBT
Price
From $0.8158(MOQ 1000)
Temp Range
-55.0°C to 175.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • Automotive AEC-Q101 qualified 360 V IGBT with built-in TVS clamp
  • 25 A maximum collector current (IC) at rated conditions
  • Internal TVS diode and gate resistor for simplified gate drive design
  • 300 mJ avalanche energy ruggedness for robust overvoltage protection
  • Collector-emitter voltage max 385 V for safe operating margin
  • ESCIS (R-PSIP-T3) 3-pin vertical package for dense inverter layouts

Applications

The STGI25N36LZAG is designed for automotive inverter and motor control applications such as electric power steering, HVAC compressor drives, and mild hybrid system converters where AEC-Q101 qualification and internal overvoltage clamping are required. Its integrated TVS diode and resistor reduce external component count in gate drive circuits for high-reliability automotive platforms.

Specifications

Factory Lead Time14Weeks
Date Of Intro2020-08-25
YTEOL5
Case ConnectionCOLLECTOR
Collector Current-Max (IC)25A
Collector-Emitter Voltage-Max385V
ConfigurationSINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Gate-Emitter Thr Voltage-Max2.1V
Gate-Emitter Voltage-Max16V
JESD-30 CodeR-PSIP-T3
JESD-609 Codee3
Number of Elements1
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)150W
Reference StandardAEC-Q101
Surface MountNO
Terminal FinishMatte Tin (Sn) - annealed
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationAUTOMOTIVE IGNITION
Transistor Element MaterialSILICON
Turn-off Time-Nom (toff)14500ns
Turn-on Time-Nom (ton)4560ns
VCEsat-Max1.25V
PackageTransistor Outline, Vertical

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
Country of OriginMainland China

Datasheet

STGI25N36LZAG Datasheet Download

Official datasheet from STMicroelectronics

Alternate & Equivalent Parts

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Why does the STGI25N36LZAG include a built-in TVS diode and gate resistor instead of relying on external components?

Integrating the TVS diode (clamping at 360 V) and a gate resistor directly into the STGI25N36LZAG package reduces the number of external components on the gate drive PCB, shortens parasitic inductance paths, and ensures the clamp response is tightly matched to the IGBT's 385 V collector-emitter rating in automotive inverter designs.

What collector current and voltage ratings make STGI25N36LZAG appropriate for electric power steering systems?

The STGI25N36LZAG is rated at 25 A maximum collector current and 385 V collector-emitter voltage, which covers the phase current and bus voltage requirements of 12 V to 48 V electric power steering inverters, particularly when the 300 mJ energy rating provides margin against transient overvoltage events on the motor winding.

Is STGI25N36LZAG AEC-Q101 qualified and what temperature range is it specified for?

Yes, the STGI25N36LZAG carries AEC-Q101 automotive qualification and is specified for operation over -40°C to +150°C junction temperature, meeting the stringent reliability and thermal requirements of under-hood and near-motor automotive electronics in production vehicles.

How does the ESCIS package of STGI25N36LZAG affect PCB layout in a three-phase inverter module?

The ESCIS (R-PSIP-T3) vertical 3-pin package of the STGI25N36LZAG allows upright, through-hole or surface-mount placement close to a heatsink, enabling compact three-phase H-bridge layouts where six IGBT devices are arrayed with short bus bar connections, reducing stray inductance in the 25 A switching loop.

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About STMicroelectronics

STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.

AvailabilityIn Stock
Reference Price (USD)
From $0.8158
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1000+$0.9168$916.76
4000+$0.8242$3296.72
8000+$0.8200$6559.84
16000+$0.8158$13052.32
pcs
Unit price: $0.9168 · Total: $916.76

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.

MR
Marco Rossi
CTO, AutoDrive Systems, Italy