STGB4M65DF2 STMicroelectronics Transistor IGBT (Other) In Stock
The STGB4M65DF2 is an STMicroelectronics M-series trench gate field-stop IGBT rated at 650 V and 4 A (8 A peak) with integrated built-in anti-parallel diode in a D2PAK package for low-loss switching. Available from stock for worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGB4M65DF2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $0.4332(MOQ 1000)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V / 4 A (8 A pulsed) trench gate field-stop structure delivers low conduction and switching losses in 650 V power conversion stages
- Integrated built-in anti-parallel diode eliminates the need for an external freewheeling diode, reducing BOM and PCB area
- M-series optimized for low-loss operation at medium frequencies, making it suitable for hard-switching converter topologies
- D2PAK surface mount package provides excellent thermal dissipation with direct heatsink mounting and gate-emitter threshold voltage up to 7 V for robust drive compatibility
Applications
The STGB4M65DF2 is used as the main switching element in 650 V LLC resonant converters, PFC boost stages, and half-bridge inverters for industrial power supplies and solar microinverters. Its integrated diode and low-loss trench field-stop IGBT cell structure simplify circuit design in motor drives and induction heating systems operating from a 400 V AC mains supply. The D2PAK package allows efficient thermal management on PCB-level heatsinks in compact power stage designs rated up to several hundred watts.
Specifications
| Manufacturer Package Code | D2PAK |
| Factory Lead Time | 15Weeks |
| Date Of Intro | 2016-11-23 |
| YTEOL | 5.82 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 8A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 68W |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 296ns |
| Turn-on Time-Nom (ton) | 19.6ns |
| VCEsat-Max | 2.1V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of the STGB4M65DF2, and how do they influence topology selection?
The STGB4M65DF2 is rated at 650 V collector-emitter voltage and 4 A continuous collector current (8 A pulsed IC max). These ratings make it suitable for single-phase 230 V AC mains-connected topologies where the DC bus reaches 400 V, such as PFC boost converters, half-bridge LLC resonant converters, and single-phase motor drives operating up to a few hundred watts.
Does the STGB4M65DF2 require an external freewheeling diode, and why does this matter for board layout?
No, the STGB4M65DF2 has a built-in anti-parallel diode integrated in the same D2PAK package, eliminating the need for an external freewheeling diode. This reduces the component count by 1 diode per switch position, saving PCB area and shortening the commutation loop — a key advantage in compact 650 V half-bridge and full-bridge power stage designs.
What gate drive voltage and threshold should designers plan for when driving the STGB4M65DF2?
The STGB4M65DF2 has a gate-emitter threshold voltage (Vge(th)) maximum of 7 V and a gate-emitter voltage absolute maximum of 20 V. A typical gate drive design applies +15 V turn-on and -5 V to -8 V turn-off gate voltages, providing sufficient overdrive above the 7 V threshold for full saturation while the negative turn-off voltage improves dV/dt immunity in 650 V bus environments.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000+ | $0.6040 | $604.00 |
| 2000+ | $0.4466 | $893.20 |
| 8000+ | $0.4377 | $3501.36 |
| 16000+ | $0.4354 | $6967.04 |
| 32000+ | $0.4332 | $13862.40 |
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