STGB20H65FB2 STMicroelectronics Transistor IGBT (Other) In Stock
STGB20H65FB2 is an STMicroelectronics 650 V, 20 A trench gate field-stop IGBT from the high-speed HB2 series, with a 40 A peak collector current rating and a maximum gate-emitter threshold voltage of 7 V, packaged in the D²PAK (TO-263AB) for PCB-mount power switching applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGB20H65FB2 Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $0.6221(MOQ 10)
- Temp Range
- -55.0°C to 175.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V collector-emitter voltage with 20 A continuous / 40 A pulsed collector current for mid-power switching
- Trench gate field-stop technology in the HB2 series delivering fast switching with low switching losses
- Low gate-emitter threshold voltage maximum of 7 V enabling drive from 3.3 V or 5 V gate driver ICs
- D²PAK (TO-263AB) package with collector tab soldered to PCB copper for effective thermal management
- Introduced in 2020 as an active product with 15-week factory lead time for production planning
Applications
STGB20H65FB2 is suited for single-phase and three-phase inverter stages in solar microinverters, uninterruptible power supplies (UPS), and motor drive systems operating at 400 V AC bus voltage levels. The high-speed HB2 trench gate technology enables switching frequencies suitable for PFC boost stages and resonant LLC converters with reduced gate charge and tail current. Its D²PAK surface-mount package simplifies thermal design in space-constrained industrial power electronics without requiring separate heatsink mounting hardware.
Specifications
| Factory Lead Time | 15Weeks |
| Date Of Intro | 2020-05-25 |
| YTEOL | 5.82 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 40A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE |
| Gate-Emitter Thr Voltage-Max | 7V |
| Gate-Emitter Voltage-Max | 20V |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 147W |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 178ns |
| Turn-on Time-Nom (ton) | 26ns |
| VCEsat-Max | 2.1V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the continuous and pulsed collector current ratings for STGB20H65FB2 in a PFC or inverter design?
STGB20H65FB2 supports a continuous collector current of 20 A and a maximum pulsed collector current of 40 A at 650 V collector-emitter voltage, covering typical single-phase PFC stages and half-bridge inverter legs in 400 V AC industrial equipment.
Does the D²PAK package of STGB20H65FB2 provide adequate thermal performance for high-frequency switching?
The D²PAK (TO-263AB) package includes a large collector tab that directly bonds to the PCB copper pad, providing a low-resistance thermal path to the board. Combined with the HB2 series low switching losses at 20 A, this allows sustained high-frequency operation without an external heatsink clip in many applications.
What gate drive voltage and threshold voltage specification should engineers plan for when designing the STGB20H65FB2 gate driver circuit?
STGB20H65FB2 has a maximum gate-emitter threshold voltage of 7 V and a maximum gate-emitter voltage rating of 20 V, so a gate driver supplying +15 V / -8 V is a typical and safe choice to ensure full saturation and fast turn-off in the 650 V switching circuit.
For procurement planning, what is the typical factory lead time for STGB20H65FB2 and when was it introduced?
STGB20H65FB2 was introduced in May 2020 and remains an active product with a reported factory lead time of approximately 15 weeks, which buyers should factor into production scheduling when placing orders for the 650 V, 20 A IGBT in D²PAK packaging.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.4700 | $14.70 |
| 100+ | $0.9900 | $99.00 |
| 500+ | $0.8000 | $400.00 |
| 2000+ | $0.6878 | $1375.54 |
| 8000+ | $0.6252 | $5001.92 |
| 16000+ | $0.6220 | $9952.80 |
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