STGH30H65DFB-2AG STMicroelectronics Transistor IGBT (Other) In Stock
STMicroelectronics STGH30H65DFB-2AG is an automotive-grade trench gate field-stop IGBT rated at 650 V and 30 A (60 A pulsed) with 16 ns fall time in an H²PAK-2 package. Integrates a fast built-in diode for high-speed half-bridge switching in EV and industrial motor drives. Available globally with fast delivery.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGH30H65DFB-2AG Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.1891(MOQ 5)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGH30H65DFB-2AG?
- Automotive-grade 650 V / 30 A trench gate field-stop IGBT with AEC-Q101 qualification for e-mobility and on-board charger applications
- 16 ns maximum fall time enables high-speed switching in half-bridge topologies, reducing switching losses in inverter stages above 10 kHz
- Integrated built-in fast diode in H²PAK-2 package reduces external component count and simplifies PCB layout for compact power modules
What is STGH30H65DFB-2AG used for?
The STGH30H65DFB-2AG is designed for automotive on-board chargers, electric vehicle traction inverters, and industrial servo drives requiring 650 V breakdown with fast 16 ns switching. Its automotive-grade qualification and H²PAK-2 packaging make it well-suited for compact power stage designs in EV auxiliary inverters and DC-AC converters. The built-in fast recovery diode eliminates separate freewheeling diode components, reducing BOM complexity in half-bridge and full-bridge motor-drive configurations.
What are the specifications of STGH30H65DFB-2AG?
| Factory Lead Time | 15Weeks |
| YTEOL | 9 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 60A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Fall Time-Max (tf) | 16ns |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 260W |
| Reference Standard | AEC-Q101 |
| Rise Time-Max (tr) | 20ns |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 186ns |
| Turn-on Time-Nom (ton) | 44ns |
| VCEsat-Max | 2V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGH30H65DFB-2AG datasheet?
STGH30H65DFB-2AG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGH30H65DFB-2AG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of STGH30H65DFB-2AG for half-bridge inverter design?
STGH30H65DFB-2AG is rated for 650 V collector-emitter voltage and 30 A continuous collector current, with a 60 A peak pulsed rating. These specifications support half-bridge inverter designs for 400 V bus systems in automotive on-board chargers and industrial motor drives operating at switching frequencies above 10 kHz.
How does the 16 ns fall time of STGH30H65DFB-2AG benefit high-frequency switching circuits?
The 16 ns maximum fall time of STGH30H65DFB-2AG enables efficient switching at frequencies up to 100 kHz in resonant converters and PWM inverters, significantly reducing switching energy loss compared to slower IGBTs. For a 650 V / 30 A half-bridge switching at 20 kHz, lower fall time directly translates to measurable efficiency improvement in watts saved per switching cycle.
Is STGH30H65DFB-2AG qualified for automotive on-board charger designs?
Yes, STGH30H65DFB-2AG carries automotive-grade qualification aligned with AEC-Q101 standards, confirming reliability across automotive temperature and stress conditions for 650 V on-board charger stages. The H²PAK-2 package provides robust thermal performance with low thermal resistance, essential for dissipating switching losses in EV battery charging at 30 A continuous load.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $1.2400 | $6.20 |
| 1000+ | $1.2074 | $1207.40 |
| 16000+ | $1.1890 | $19024.80 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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