STGH30H65DFB-2AG STMicroelectronics Transistor IGBT (Other) In Stock
STMicroelectronics STGH30H65DFB-2AG is an automotive-grade trench gate field-stop IGBT rated at 650 V and 30 A (60 A pulsed) with 16 ns fall time in an H²PAK-2 package. Integrates a fast built-in diode for high-speed half-bridge switching in EV and industrial motor drives. Available globally with fast delivery.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STGH30H65DFB-2AG Datasheet PDF
- Category
- Transistor IGBT
- Price
- From $1.1891(MOQ 5)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STGH30H65DFB-2AG?
- Automotive-grade 650 V / 30 A trench gate field-stop IGBT with AEC-Q101 qualification for e-mobility and on-board charger applications
- 16 ns maximum fall time enables high-speed switching in half-bridge topologies, reducing switching losses in inverter stages above 10 kHz
- Integrated built-in fast diode in H²PAK-2 package reduces external component count and simplifies PCB layout for compact power modules
What is STGH30H65DFB-2AG used for?
The STGH30H65DFB-2AG is designed for automotive on-board chargers, electric vehicle traction inverters, and industrial servo drives requiring 650 V breakdown with fast 16 ns switching. Its automotive-grade qualification and H²PAK-2 packaging make it well-suited for compact power stage designs in EV auxiliary inverters and DC-AC converters. The built-in fast recovery diode eliminates separate freewheeling diode components, reducing BOM complexity in half-bridge and full-bridge motor-drive configurations.
What are the specifications of STGH30H65DFB-2AG?
| Factory Lead Time | 15Weeks |
| YTEOL | 9 |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 60A |
| Collector-Emitter Voltage-Max | 650V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Fall Time-Max (tf) | 16ns |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Gate-Emitter Voltage-Max | 20V |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 260W |
| Reference Standard | AEC-Q101 |
| Rise Time-Max (tr) | 20ns |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 186ns |
| Turn-on Time-Nom (ton) | 44ns |
| VCEsat-Max | 2V |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STGH30H65DFB-2AG datasheet?
STGH30H65DFB-2AG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STGH30H65DFB-2AG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What are the voltage and current ratings of STGH30H65DFB-2AG for half-bridge inverter design?
STGH30H65DFB-2AG is rated for 650 V collector-emitter voltage and 30 A continuous collector current, with a 60 A peak pulsed rating. These specifications support half-bridge inverter designs for 400 V bus systems in automotive on-board chargers and industrial motor drives operating at switching frequencies above 10 kHz.
How does the 16 ns fall time of STGH30H65DFB-2AG benefit high-frequency switching circuits?
The 16 ns maximum fall time of STGH30H65DFB-2AG enables efficient switching at frequencies up to 100 kHz in resonant converters and PWM inverters, significantly reducing switching energy loss compared to slower IGBTs. For a 650 V / 30 A half-bridge switching at 20 kHz, lower fall time directly translates to measurable efficiency improvement in watts saved per switching cycle.
Is STGH30H65DFB-2AG qualified for automotive on-board charger designs?
Yes, STGH30H65DFB-2AG carries automotive-grade qualification aligned with AEC-Q101 standards, confirming reliability across automotive temperature and stress conditions for 650 V on-board charger stages. The H²PAK-2 package provides robust thermal performance with low thermal resistance, essential for dissipating switching losses in EV battery charging at 30 A continuous load.
Related Guides
DP83TG720SWRHATQ1 Automotive Ethernet PHY Selection Guide
Choose DP83TG720SWRHATQ1 by comparing MAC interfaces, exact ordering codes, qualification evidence, and documented supply offers.
Nov 15, 2026
TLV76033 Selection Guide: Headroom, Heat, and Sourcing
Choose a TLV76033 3.3-V supply using manufacturer ratings, load profiles, dropout calculations, thermal checks, and exact orderable parts.
Nov 14, 2026
DP83TG720SWRHATQ1 Automotive Ethernet Board Design Guide
A practical DP83TG720SWRHATQ1 board checklist for host interfaces, startup, channel validation, qualified variants, and sourcing.
Nov 14, 2026
BQ76942PFBR Battery Monitor Selection and Procurement Guide
Choose BQ76942PFBR by cell count, protection architecture, factory configuration, measurement needs, and a controlled sourcing specification.
Nov 13, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $1.2400 | $6.20 |
| 1000+ | $1.2074 | $1207.40 |
| 16000+ | $1.1890 | $19024.80 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
IXGH24N170
IXYS SEMICONDUCTOR
Transistor IGBT
ACPL-W341-000E
Avago Technologies
Transistor IGBT
IXYH30N120C3D1
IXYS SEMICONDUCTOR
Transistor IGBT
IXA12IF1200HB
IXYS SEMICONDUCTOR
Transistor IGBT
GT50JR22
Toshiba
Transistor IGBT
GT50J342,Q(O
Toshiba
Transistor IGBT
FGH25T120SMD_F155
ON Semiconductor
Transistor IGBT
AFGHL40T120RWD
onsemi
Transistor IGBT
IRGP4066DPBF
International Rectifier
Transistor IGBT
IRGP4062DPBF
International Rectifier
Transistor IGBT
IRGB4062DPBF
International Rectifier
Transistor IGBT
IRG4PC50UD-EPBF
International Rectifier
Transistor IGBT
NGTB30N120LWG
ON Semiconductor
Transistor IGBT
IRG7PH46UD-EP
Infineon
Transistor IGBT
IRG7PH42UPBF
Infineon
Transistor IGBT
FGI3040G2_F085
ON Semiconductor
Transistor IGBT
FGP3440G2_F085
ON Semiconductor
Transistor IGBT
IRGB20B60PD1PBF
Infineon
Transistor IGBT
IKW50N60T
Infineon
Transistor IGBT
RJH60F0DPQ-A0#T0
Renesas Electronics
Transistor IGBT
IKW30N65ES5
Infineon
Transistor IGBT
IKW75N65ES5
Infineon
Transistor IGBT
IRGS14C40LPBF
International Rectifier
Transistor IGBT
IXBH12N300
IXYS SEMICONDUCTOR
Transistor IGBT