STMicroelectronics

VG6640CB1M/1 is an automotive-grade 1.3-megapixel high-dynamic-range CMOS image sensor from STMicroelectronics, featuring 132 dB dynamic range and 60 fps frame rate in a 9.3 × 9 mm BGA package for advanced driver-assistance systems.

The SCT20N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET from STMicroelectronics rated at 1700 V and 43 A with a 64 mΩ typical on-resistance. Housed in the HiP247 package, it is AEC-Q101 qualified for high-voltage EV powertrain and industrial power conversion applications.

SCT1000N170AG is an automotive-grade silicon carbide (SiC) N-channel power MOSFET rated at 1700 V and 7 A with a typical on-resistance of 1.0 Ω. It integrates a built-in diode in a HiP247 through-hole package, optimized for high-efficiency, high-voltage automotive power conversion applications.

STMicroelectronics SCTWA40N120G2V is a 1200 V, 36 A silicon carbide N-channel power MOSFET with 62 mΩ typical Rds(on) in an HiP247 long-lead package. From $18.00 in stock with worldwide shipping.

Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ

Automotive-grade silicon carbide N-channel power MOSFET from STMicroelectronics rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247 package. AEC-Q101 qualified for EV traction and onboard charger designs. Available worldwide.

The STGI25N36LZAG is an automotive-grade 360 V internally clamped IGBT with 25 A collector current, built-in TVS diode and gate resistor, 300 mJ ruggedness rating, and a compact ESCIS vertical package for motor drive applications.

The STGB4M65DF2 is an STMicroelectronics M-series trench gate field-stop IGBT rated at 650 V and 4 A (8 A peak) with integrated built-in anti-parallel diode in a D2PAK package for low-loss switching. Available from stock for worldwide shipping.

PowerMESH IGBT, S series 600 V, 13 A low drop

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package

The STGWT40H65DFB is an N-channel IGBT from STMicroelectronics rated at 650 V collector-emitter voltage and 80 A maximum collector current, with a 283 W power dissipation limit in a through-hole vertical TO-247 style package. It is designed for hard-switching power conversion applications including inverters, motor drives, and UPS systems requiring high-efficiency switching up to 650 V.

STMicroelectronics STGB25N36LZAG is an automotive-grade 360 V internally clamped N-channel IGBT with built-in TVS diode and resistor, rated at 25 A collector current. It offers robust ESD protection and a collector-emitter voltage up to 385 V. Available with worldwide shipping and in stock from authorized distributors.

Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads package

STMicroelectronics STGB40H65FB is a 650 V, 40 A trench gate field-stop IGBT in a D2PAK (TO-263) package, optimized for high-speed switching in motor drives and PFC stages. Available from stock with worldwide shipping.

Trench gate field-stop 650 V, 30 A high speed HB series IGBT

The STGWA80H65FB is a trench gate field-stop N-channel IGBT from STMicroelectronics rated at 650 V and 80 A continuous, with a peak power dissipation of 469 W in a TO-247 package. It belongs to the HB high-speed series optimized for low switching losses in inverter and motor-drive applications.

STMicroelectronics STGF30H65DFB2 is a 650V, 30A trench gate field-stop IGBT with built-in fast-recovery diode in an isolated TO-220FP package. It belongs to the high-speed HB2 series optimized for hard-switching converters with a 50A peak collector current rating. Designed for motor drives, welding inverters, and industrial switching power supplies.

STGB20H65FB2 is an STMicroelectronics 650 V, 20 A trench gate field-stop IGBT from the high-speed HB2 series, with a 40 A peak collector current rating and a maximum gate-emitter threshold voltage of 7 V, packaged in the D²PAK (TO-263AB) for PCB-mount power switching applications.

STMicroelectronics STGP20H65DFB2 is a trench gate field-stop IGBT rated at 650 V and 20 A (40 A pulsed) in a TO-220AB package with a built-in freewheeling diode. Part of the high-speed HB2 series, it delivers optimized switching performance for motor drives and power conversion applications.

STMicroelectronics STGP20H65FB2 is a 650 V, 20 A trench gate field-stop IGBT in the HB2 high-speed series housed in a TO-220AB package. Features a 40 A peak collector current, 7 V gate threshold, and optimized switching for hard-switching inverter topologies. Available from authorized distributors with worldwide shipping.

High voltage fast-switching NPN power transistor

DPAK-3/2

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220 package

The STGB30H65DFB2 is a 650 V, 30 A trench gate field-stop IGBT from STMicroelectronics in the HB2 high-speed series, housed in a D2PAK (TO-263AB) surface-mount package. It includes a built-in anti-parallel diode and is optimized for switching power conversion in motor drives and industrial inverters.

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-220 package

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in TO-3PF and TO-247 long leads packages

STFU11N65M2 is an N-channel 650 V MDmesh M2 power MOSFET from STMicroelectronics in TO-220FP ultra narrow leads package, rated at 7 A with 0.60 Ω typical on-resistance for efficient switching power conversion. Available with worldwide shipping.

STMicroelectronics STGWA40H65DHFB2 is a 650 V, 40 A trench gate field-stop IGBT with integrated anti-parallel diode from the high-speed HB2 series in a TO-247 long-leads package. Rated for up to 72 A peak collector current, it targets motor drives, solar inverters, and uninterruptible power supply designs.

N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

Use the download button to access the STU3N45K3 schematic symbol, PCB footprint, and 3D model.

Automotive-grade N-channel 600 V, 0.093 Ohm typ., 29 A MDmesh II Power MOSFET in a D2PAK package

STP13N60DM2 is a 3 pins mosfet (n-channel) by STMicroelectronics. Key specs: 3 pins, Transistor Outline, Vertical package, N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package. From quote-based sourcing, in stock checks support worldwide shipping.

N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

STD11N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET in a DPAK package, delivering 8 A continuous drain current with 520 mΩ maximum on-resistance. Optimized for high-efficiency power conversion with low switching losses. Suitable for SMPS, PFC stages, and industrial motor drives with worldwide availability.

N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package

N-channel 650 V, 51 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package

4 x 80 W digital input class-D automotive audio amplifier with Hi-Fi audio quality, advanced diagnostics, 2 MHz switching frequency and high resolution bandwidth

Automotive dual monolithic switching regulator with LDO and HSD

STMicroelectronics ST25TV02KC-TFH9 is an NFC Type 5 / ISO 15693 RFID tag IC with up to 2.5 Kbits of EEPROM memory for product identification and data protection. It features configurable password protection, energy harvesting output, and operates in the 13.56 MHz ISM band. Suitable for smart product labeling, anti-counterfeiting, and IoT asset tracking applications.

N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Automotive 650 V power Schottky silicon carbide diode

STPS15LCD80CFP is a 3 pins schottky diode by STMicroelectronics. Key specs: 3 pins, Transistor Outline, Vertical package, Power Schottky rectifier. From quote-based sourcing, in stock checks support worldwide shipping.

STMicroelectronics STU6N60DM2 is a MOSFET (N-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 600 V, 0.95 Ohm in Transistor Outline, Vertical. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

N-channel 650 V, 0.182 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a DPAK package

STF12N50DM2 is an N-channel power MOSFET from STMicroelectronics rated for 500 V drain-to-source voltage and 12 A continuous drain current. It features matte tin terminal finish for enhanced solderability in a TO-220 vertical package. Available from global distributors with worldwide shipping.

N-channel 600 V, 37 mΩ typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in an IPAK package

N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package