SCTWA40N120G2V STMicroelectronics MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
STMicroelectronics SCTWA40N120G2V is a 1200 V, 36 A silicon carbide N-channel power MOSFET with 62 mΩ typical Rds(on) in an HiP247 long-lead package. From $18.00 in stock with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA40N120G2V Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $9.7500(MOQ 1)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA40N120G2V?
- 1200 V drain-source breakdown voltage with 62 mΩ typical Rds(on) for high-efficiency switching in SiC power stages
- 36 A continuous drain current rating in HiP247 long-lead package enabling direct PCB mounting with reduced parasitic inductance
- Silicon carbide (SiC) MOSFET technology delivering ultra-low switching losses at 100 kHz+ for EV inverters and solar converters
What is SCTWA40N120G2V used for?
The SCTWA40N120G2V is designed for high-frequency power conversion in electric vehicle traction inverters and on-board chargers where 1200 V blocking voltage and low switching losses are critical. Its 62 mΩ Rds(on) and 36 A rating support three-phase motor drives and bidirectional DC-DC converters operating at switching frequencies above 50 kHz. The HiP247 long-lead package reduces parasitic inductance during fast switching transitions, making it a strong fit for industrial solar inverters and UPS systems.
What are the specifications of SCTWA40N120G2V?
| Factory Lead Time | 32Weeks |
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 36A |
| Drain-source On Resistance-Max | 0.1Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 15pF |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 278W |
| Pulsed Drain Current-Max (IDM) | 108A |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA40N120G2V datasheet?
SCTWA40N120G2V Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA40N120G2V?
Compatible alternatives and drop-in replacements for SCTWA40N120G2V:
Power Field-Effect Transistor, 36A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What Rds(on) and drain current does the SCTWA40N120G2V offer compared to a silicon MOSFET in a similar package?
The SCTWA40N120G2V achieves a typical Rds(on) of 62 mΩ at 25°C and supports 36 A continuous drain current at 1200 V. Silicon MOSFETs at 1200 V typically exhibit Rds(on) exceeding 500 mΩ, so this SiC device reduces conduction losses by 8x or more in the same HiP247 footprint.
In which EV or renewable energy designs can the SCTWA40N120G2V replace a 650 V Si IGBT for higher efficiency?
EV on-board chargers (OBC) operating on 800 V battery platforms and grid-tied solar inverters running at 50 kHz to 100 kHz benefit most. At those frequencies, IGBT switching losses dominate, while the SiC MOSFET's 15 pF Crss and fast body diode cut total switching losses by over 50%, enabling smaller magnetics and better thermal margins.
How does the HiP247 long-lead package affect gate-drive design for the SCTWA40N120G2V?
The HiP247 package extends lead length to reduce parasitic source inductance versus standard TO-247, which lowers gate-drive voltage ringing at 1200 V. Designers typically use a 10 Ω to 22 Ω gate resistor with a -5 V to 0 V off-state bias to prevent spurious turn-on during fast dv/dt transients in bridge topologies.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.4700 | $17.47 |
| 10+ | $12.4300 | $124.30 |
| 100+ | $10.4640 | $1046.40 |
| 600+ | $9.7500 | $5850.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
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