STFU11N65M2 STMicroelectronics MOSFET (N-Channel) (Transistor Outline, Vertical) In Stock
STFU11N65M2 is an N-channel 650 V MDmesh M2 power MOSFET from STMicroelectronics in TO-220FP ultra narrow leads package, rated at 7 A with 0.60 Ω typical on-resistance for efficient switching power conversion. Available with worldwide shipping.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- STFU11N65M2 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $1.1400(MOQ 10)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 650 V drain-source breakdown voltage supporting direct switching from 400 V rectified mains in power supplies and inverters
- 0.60 Ω typical on-resistance at 7 A enabling low conduction loss in mid-power AC-DC converter stages
- MDmesh M2 technology optimizing the figure of merit (Rds_on × Qg) for high-frequency switching efficiency
Applications
The STFU11N65M2 is designed for offline AC-DC power conversion applications including flyback converters, LLC resonant converters, and PFC boost stages operating from 230 V or 110 V mains. Its 650 V rating and 0.60 Ω on-resistance make it suitable for adapter power supplies up to 50 W, lighting ballasts, and industrial SMPS where TO-220FP through-hole mounting simplifies heatsink attachment. The MDmesh M2 superjunction technology provides a low gate charge for efficient operation at switching frequencies up to 200 kHz.
Specifications
| YTEOL | 0 |
| JESD-609 Code | e3 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What continuous drain current does STFU11N65M2 support and at what on-resistance?
The STFU11N65M2 is rated for 7 A continuous drain current with a typical on-resistance of 0.60 Ω and a maximum of slightly higher at elevated temperatures. At 7 A conduction, resistive power dissipation is approximately 29 W, so adequate heatsinking through the TO-220FP package is required for designs operating near full current rating in ambient temperatures above 25°C.
For which offline power converter topologies is STFU11N65M2 best suited given its 650 V rating?
The 650 V breakdown voltage of STFU11N65M2 provides sufficient margin above the 400 V DC bus present in 230 V AC mains rectifier circuits, accounting for line transients and ringing peaks. It is best suited for single-switch flyback converters up to 50 W, active clamp flyback designs, and boost PFC stages where the switch node voltage swings to 400 V plus 50% overshoot, making the 650 V rating the industry-standard choice for this class of converter.
How does MDmesh M2 technology in STFU11N65M2 improve switching performance compared to standard planar MOSFETs?
MDmesh M2 uses a superjunction column structure to reduce on-resistance per unit area by 5× to 10× compared to standard planar high-voltage MOSFETs, while also lowering gate charge (Qg) to achieve a better Rds_on × Qg figure of merit. In a 100 kHz flyback converter, the reduced gate charge translates to lower gate drive power loss and faster switching transitions below 50 ns, improving overall converter efficiency by 0.5% to 1.5% compared to a conventional 650 V planar MOSFET at the same on-resistance.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $1.8900 | $18.90 |
| 100+ | $1.3500 | $135.00 |
| 500+ | $1.1400 | $570.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
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