STD11N60M6 STMicroelectronics MOSFET (N-Channel) (Other) In Stock
STD11N60M6 is an N-channel 600 V MDmesh M6 Power MOSFET in a DPAK package, delivering 8 A continuous drain current with 520 mΩ maximum on-resistance. Optimized for high-efficiency power conversion with low switching losses. Suitable for SMPS, PFC stages, and industrial motor drives with worldwide availability.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STD11N60M6 Datasheet PDF
- Category
- MOSFET (N-Channel)
- Price
- From $0.6692(MOQ 2500)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of STD11N60M6?
- 600 V breakdown voltage with MDmesh M6 superjunction technology for superior switching efficiency
- Ultra-low drain-source on-resistance of 520 mΩ max at 8 A continuous drain current
- Compact DPAK (TO-252) surface-mount package ideal for high-density PCB layouts
- Integrated body diode enables synchronous rectification and avalanche ruggedness up to 100 mJ
What is STD11N60M6 used for?
STD11N60M6 is well-suited for switched-mode power supplies (SMPS), power factor correction (PFC) boost stages, and flyback converters operating from 85–265 VAC mains. Its low conduction and switching losses make it ideal for LED driver circuits, industrial servo drives, and solar microinverter designs where efficiency above 90% is required.
What are the specifications of STD11N60M6?
| Factory Lead Time | 14Weeks |
| Date Of Intro | 2020-07-27 |
| YTEOL | 6 |
| Avalanche Energy Rating (Eas) | 100mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600V |
| Drain Current-Max (ID) | 8A |
| Drain-source On Resistance-Max | 0.52Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 4pF |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 90W |
| Pulsed Drain Current-Max (IDM) | 19A |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the STD11N60M6 datasheet?
STD11N60M6 Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for STD11N60M6?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What continuous drain current and breakdown voltage does the STD11N60M6 support?
The STD11N60M6 supports a continuous drain current of 8 A and a drain-source breakdown voltage of 600 V minimum, making it suitable for offline power conversion applications operating from universal AC mains up to 265 VAC.
How does the MDmesh M6 technology in STD11N60M6 improve power supply efficiency?
MDmesh M6 superjunction technology reduces the drain-source on-resistance to 520 mΩ max while maintaining a 600 V rating. This lowers conduction losses by over 20% compared to standard MOSFETs, enabling power supply efficiencies above 90% in 50–100 W SMPS designs.
Which SMPS topologies benefit most from using STD11N60M6 in a DPAK footprint?
Flyback, boost PFC, and LLC half-bridge topologies benefit from STD11N60M6 in the DPAK (TO-252) package. The surface-mount footprint saves 40% board space versus a TO-220 through-hole device while dissipating up to 40 W with a suitable heat slug soldered to a copper pour.
What is the avalanche energy rating of the STD11N60M6, and why does it matter for inductive loads?
The STD11N60M6 is rated for 100 mJ of single-pulse avalanche energy (Eas), providing robust protection when switching inductive loads. This rating ensures the device can safely absorb energy spikes from unclamped inductive switching events without catastrophic failure, reducing the need for external snubber circuits.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 2500+ | $0.7523 | $1880.73 |
| 10000+ | $0.6762 | $6761.90 |
| 20000+ | $0.6727 | $13454.00 |
| 40000+ | $0.6692 | $26768.80 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
AO3416
Alpha & Omega Semiconductors
MOSFET (N-Channel)
2SK3568
Toshiba
MOSFET (N-Channel)
BSS139 H6327
Infineon
MOSFET (N-Channel)
TPWR8004PL,L1Q
Toshiba
MOSFET (N-Channel)
TPW1R005PL,L1Q
Toshiba
MOSFET (N-Channel)
ZXMN3B01FTA
Diodes Inc.
MOSFET (N-Channel)
AO3422
Alpha & Omega Semiconductors
MOSFET (N-Channel)
SI4204DY-T1-GE3
Vishay
MOSFET (N-Channel)
IRLML2402TRPBF
Infineon
MOSFET (N-Channel)
IRLML2803TRPBF
Infineon
MOSFET (N-Channel)
IRF7607TRPBF
Infineon
MOSFET (N-Channel)
IPD530N15N3GATMA1
Infineon
MOSFET (N-Channel)
BSZ520N15NS3GATMA1
Infineon
MOSFET (N-Channel)
BSC360N15NS3GATMA1
Infineon
MOSFET (N-Channel)
SQ3426AEEV-T1_GE3
Vishay
MOSFET (N-Channel)
IPI041N12N3 G
Infineon
MOSFET (N-Channel)
PMZB290UNE2
Nexperia
MOSFET (N-Channel)
ZVN4306GVTA
Diodes Inc.
MOSFET (N-Channel)
SIA459EDJ-T1-GE3
Vishay
MOSFET (N-Channel)
NTR3C21NZT1G
ON Semiconductor
MOSFET (N-Channel)
TN2404K-T1-E3
Vishay
MOSFET (N-Channel)
SI2312CDS-T1-GE3
Vishay
MOSFET (N-Channel)
DMN2230UQ-7
Diodes Inc.
MOSFET (N-Channel)
CPH6442-TL-W
ON Semiconductor
MOSFET (N-Channel)