SCTW60N120G2AG STMicroelectronics Integrated Circuit (Transistor Outline, Vertical) In Stock
Automotive-grade silicon carbide N-channel power MOSFET from STMicroelectronics rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247 package. AEC-Q101 qualified for EV traction and onboard charger designs. Available worldwide.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- OBSOLETE
- Datasheet
- SCTW60N120G2AG Datasheet PDF
- Category
- Integrated Circuit
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTW60N120G2AG?
- 1200 V / 52 A SiC MOSFET with 45 mΩ typical Rds(on) for high-efficiency switching in EV powertrains
- AEC-Q101 automotive-grade qualification ensuring reliability in traction inverters and onboard chargers
- HiP247 package with exposed drain pad enabling superior thermal management at high switching frequencies
What is SCTW60N120G2AG used for?
The SCTW60N120G2AG is designed for automotive traction inverters, onboard chargers (OBC), and DC-DC converters in electric and hybrid vehicles where the 1200 V breakdown voltage covers full battery pack transients. Its 45 mΩ on-resistance minimizes conduction losses at 52 A, improving system efficiency in three-phase motor drive stages. The AEC-Q101 qualification and HiP247 package ensure reliable operation over the wide thermal cycling range demanded by automotive power modules.
What are the specifications of SCTW60N120G2AG?
| Date Of Intro | 2020-05-20 |
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 52A |
| Drain-source On Resistance-Max | 0.058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 18pF |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 388W |
| Pulsed Drain Current-Max (IDM) | 156A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTW60N120G2AG datasheet?
SCTW60N120G2AG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTW60N120G2AG?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What makes the SCTW60N120G2AG suitable for EV traction inverter designs compared to silicon IGBTs?
The SCTW60N120G2AG is a silicon carbide MOSFET with a 1200 V rating, 52 A drain current, and 45 mΩ typical Rds(on), which enables switching frequencies above 20 kHz with lower switching losses than comparable silicon IGBTs. Higher switching frequency reduces the size of passive filtering components in the inverter, and SiC's lower reverse recovery charge (Qrr) improves system efficiency in traction drives operating from 400 V or 800 V battery packs.
How does the HiP247 package affect thermal performance of the SCTW60N120G2AG in high-power modules?
The HiP247 package used by the SCTW60N120G2AG features an isolated drain pad exposed on the back, allowing direct attachment to a heatsink or direct bonded copper (DBC) substrate without an insulating washer. This reduces thermal resistance between junction and case, enabling the MOSFET to sustain 52 A continuous drain current at high ambient temperatures typical of automotive under-hood environments ranging up to 150°C.
Is the SCTW60N120G2AG qualified for safety-critical automotive applications, and what certification applies?
Yes, the SCTW60N120G2AG is AEC-Q101 automotive-grade qualified, which is the standard reliability qualification for discrete semiconductors used in safety-critical vehicle systems. This covers high-temperature reverse bias (HTRB) at 1200 V, intermittent operation life (IOL), and thermal shock testing, ensuring the device meets the stringent reliability requirements of EV traction inverters and onboard chargers that must operate for 15 years or more.
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Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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