MOSFET (P-Channel)

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

STRH12P10GYT is a radiation-hardened P-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown and 12 A drain current with a 0.3 ohm on-resistance. It integrates a built-in diode, features 112 mJ avalanche energy rating, and is housed in a TO-257AA 3-pin package for space and high-reliability applications. Designed for spacecraft power switching, satellite power management, and rad-hard industrial power control circuits.

Use the download button to access the SCTWA30N120 schematic symbol, PCB footprint, and 3D model.

P-channel -30 V, 11 mΩ typ., -45 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package

STMicroelectronics SCTWA60N12G2-4AG is an automotive-grade silicon carbide (SiC) Power MOSFET rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247-4 package. Designed for AEC-Q101 compliance, it delivers high efficiency in demanding EV and industrial power conversion applications.

P-Channel 16.5 V 500mA (Tj) 1W (Tc) Through Hole TO-92

MOSFET 30V 0.6Ohm

Microchip TP2540N3-G is a P-channel MOSFET with 400 V breakdown voltage, 30 Ω max drain-source on resistance, 86 mA drain current, and a built-in body diode in TO-92-3 package. From $0.80 in stock, worldwide shipping.

DPAK-3/2

The VP2206N3-G is a P-channel enhancement-mode vertical DMOS FET from Microchip with a 60 V breakdown voltage and 0.64 A drain current in a TO-92 package. Its 0.9 Ω on-resistance and built-in body diode suit low-side switching and load management applications.

Microchip VP2450N3-G is a P-channel MOSFET rated 500 V drain-source breakdown with 0.1 A drain current and 30 Ω on-resistance in a TO-92 package. Built-in body diode suits flyback and switching topologies. Available from stock with worldwide shipping.

MIC94050YM4 TR is a P-channel MOSFET from Microchip (Micrel) rated at 1.8 A continuous drain current and 6 V maximum drain-to-source voltage. It is designed for low-voltage load switching and power control in handheld and portable applications. Supplied in a 4-pin SOT-143 surface-mount package with tape-and-reel packaging for automated assembly.

The TP2104N3 is a P-channel MOSFET from Microchip rated at 40 V drain-source voltage with 6 ohm on-state resistance for efficient low-side and high-side switching applications. It is suitable for load switching, battery protection, and power management circuits requiring a reliable P-channel device. Available in a compact through-hole or surface-mount package for versatile PCB integration.

TP0606N3-G-P002 is a P-channel enhancement mode MOSFET from Microchip in a TO-92-3 package, rated for 60 V drain-source breakdown voltage and 0.32 A maximum drain current with 3.5 Ω maximum on-resistance. Features a built-in body diode and 35 pF feedback capacitance for low-side switching applications. Available from stock worldwide.

Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island

P-Channel 40 V 430mA (Tj) 740mW (Ta) Through Hole TO-92-3

MOSFET 100V 12Ohm

Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package

Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package

Power Management Specialized - PMIC IC 12A programmable DPS w/s

MOSFET 60V 3.5Ohm

Use the download button to access the STD40P3LLH6 schematic symbol, PCB footprint, and 3D model.

STS6P3LLH6 is a P-channel STripFET H6 Power MOSFET rated at 30 V and 6 A with a 24 mΩ typical on-resistance, housed in an SO-8 package for compact board designs. It offers ultra-low conduction losses and fast switching performance for efficient power management. Available from STMicroelectronics with worldwide shipping.

MOSFET 1.8V-rated PFET w/Vgs pull-up

Use the download button to access the STL30P3LLH6 schematic symbol, PCB footprint, and 3D model.

MOSFET P-Ch 20 Volt 3 Amp

Use the download button to access the STL9P3LLH6 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STL62P3LLH6 schematic symbol, PCB footprint, and 3D model.

Micrel MIC94053YC6 TR P-channel MOSFET Transistor, ±2 A, -6 V, 6-Pin SC-70

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. SO-8 package

MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

VP2106N3-G is a single P-channel MOSFET from Microchip in a TO-92-3 through-hole package with built-in body diode. Offers 60 V breakdown voltage, 250 mA drain current, and 12 Ω on-resistance. Available in stock with worldwide shipping.

STD15P6F6AG is an STMicroelectronics automotive-grade P-channel power MOSFET rated for -60 V, -10 A drain current, and 0.16 Ω max on-resistance, built with STripFET F6 technology and a built-in diode in a DPAK package for automotive switching applications.

P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

Use the download button to access the STS5P3LLH6 schematic symbol, PCB footprint, and 3D model.

STD10PF06 is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 125 mJ; DS Breakdown Voltage-Min: 60 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.

Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube

P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package

TO-220, 3 PIN

STMICROELECTRONICS - STT7P2UH7 - MOSFET, P-CH, -20V, -7A, SOT-23

DPAK-3/2

The STD10P6F6 is a P-channel power MOSFET from STMicroelectronics rated for a 60V drain-source breakdown voltage and 10A maximum drain current, with a low 0.116-ohm on-resistance and a built-in body diode, packaged in a DPAK (TO-252) surface-mount package.

Use the download button to access the STS10P4LLF6 schematic symbol, PCB footprint, and 3D model.

SOP-8

P-channel -30 V, 48 mΩ typ., -2 A STripFET™ H6 Power MOSFET in a SOT‑23 package

Use the download button to access the STL42P6LLF6 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STD28P3LLH6AG schematic symbol, PCB footprint, and 3D model.

DPAK-3/2

Use the download button to access the STD36P4LLF6 schematic symbol, PCB footprint, and 3D model.