SCTWA60N12G2-4AG STMicroelectronics MOSFET (P-Channel) (Other) In Stock
STMicroelectronics SCTWA60N12G2-4AG is an automotive-grade silicon carbide (SiC) Power MOSFET rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247-4 package. Designed for AEC-Q101 compliance, it delivers high efficiency in demanding EV and industrial power conversion applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA60N12G2-4AG Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of SCTWA60N12G2-4AG?
- Automotive-grade AEC-Q101 silicon carbide (SiC) MOSFET with 1200 V breakdown voltage for robust high-voltage operation
- Ultra-low 45 mΩ typical drain-source on-resistance (RDS(on)) at 52 A continuous drain current for minimal conduction losses
- HiP247-4 package with built-in diode enables compact, high-power-density designs in EV drivetrain and industrial inverters
What is SCTWA60N12G2-4AG used for?
The SCTWA60N12G2-4AG is engineered for automotive electric vehicle (EV) traction inverters, on-board chargers (OBC), and DC-DC converters where high-voltage switching efficiency is critical. Its SiC technology enables switching at frequencies above 100 kHz with significantly reduced switching losses compared to conventional silicon IGBTs, making it ideal for industrial motor drives and solar inverters as well.
What are the specifications of SCTWA60N12G2-4AG?
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 52A |
| Drain-source On Resistance-Max | 0.058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 18pF |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 388W |
| Pulsed Drain Current-Max (IDM) | 156A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Where can I find the SCTWA60N12G2-4AG datasheet?
SCTWA60N12G2-4AG Datasheet DownloadOfficial datasheet from STMicroelectronics
What are equivalent replacements for SCTWA60N12G2-4AG?
Compatible alternatives and drop-in replacements for SCTWA60N12G2-4AG:
Power Field-Effect Transistor, 52A I(D), 1200V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What are the key electrical ratings of the SCTWA60N12G2-4AG SiC MOSFET?
The SCTWA60N12G2-4AG is rated for 1200 V drain-source breakdown voltage, 52 A continuous drain current (ID), and a maximum drain-source on-resistance (RDS(on)) of 58 mΩ, with a typical value of 45 mΩ, making it suitable for high-power automotive and industrial applications.
Is the SCTWA60N12G2-4AG suitable for automotive EV inverter designs that require AEC-Q101 qualification?
Yes, the SCTWA60N12G2-4AG is fully AEC-Q101 qualified for automotive environments. Its SiC construction supports junction temperatures up to 175°C and allows switching frequencies above 100 kHz, enabling compact EV inverter designs with reduced heat sink requirements and improved overall system efficiency.
How does the HiP247-4 package of the SCTWA60N12G2-4AG benefit high-power PCB layouts?
The HiP247-4 package includes a Kelvin source pin for precise gate drive control, reducing switching losses significantly. It provides 4 electrical connections in an industry-standard through-hole footprint measuring approximately 16 mm × 21 mm, simplifying thermal management in motor drive and solar inverter designs.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Their engineering team helped us find a pin-compatible alternative when our original MCU went EOL.”
You May Also Like
SPD15P10P G
Infineon
MOSFET (P-Channel)
AO3407A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
SI5403DC-T1-GE3
Vishay
MOSFET (P-Channel)
BSL303SPEH6327XTSA1
Infineon
MOSFET (P-Channel)
SIA427DJ-T1-GE3
Vishay
MOSFET (P-Channel)
SiSS71DN-T1-GE3
Vishay
MOSFET (P-Channel)
SIS407ADN-T1-GE3
Vishay
MOSFET (P-Channel)
SI7157DP-T1-GE3
Vishay
MOSFET (P-Channel)
BSO201SPHXUMA1
Infineon
MOSFET (P-Channel)
AOD4189
Alpha & Omega Semiconductors
MOSFET (P-Channel)
AOD417
Alpha & Omega Semiconductors
MOSFET (P-Channel)
IPD50P04P4L11ATMA1
Infineon
MOSFET (P-Channel)
AO3401A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
RQ5L015SPTL
ROHM Semiconductor
MOSFET (P-Channel)
DMP3130LQ-7
Diodes Inc.
MOSFET (P-Channel)
BUZ906P
Magnatec
MOSFET (P-Channel)
ZXM61P02FTA
Diodes Inc.
MOSFET (P-Channel)
ZVP3310FTA
Diodes Inc.
MOSFET (P-Channel)
SPP80P06PHXKSA1
Infineon
MOSFET (P-Channel)
BSP171P
Infineon
MOSFET (P-Channel)
SQ2319ADS-T1_GE3
Vishay
MOSFET (P-Channel)
SI7101DN-T1-GE3
Vishay
MOSFET (P-Channel)
IPB80P04P4L08ATMA1
Infineon
MOSFET (P-Channel)
TPCA8108(TE12L,Q)
Toshiba
MOSFET (P-Channel)