SCTWA60N12G2-4AG STMicroelectronics MOSFET (P-Channel) (Other) In Stock
STMicroelectronics SCTWA60N12G2-4AG is an automotive-grade silicon carbide (SiC) Power MOSFET rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247-4 package. Designed for AEC-Q101 compliance, it delivers high efficiency in demanding EV and industrial power conversion applications.
- Manufacturer
- STMicroelectronics
- Package
- Other
- Pin Count
- 4
- Lifecycle
- OBSOLETE
- Datasheet
- SCTWA60N12G2-4AG Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- -55.0°C to 200.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Automotive-grade AEC-Q101 silicon carbide (SiC) MOSFET with 1200 V breakdown voltage for robust high-voltage operation
- Ultra-low 45 mΩ typical drain-source on-resistance (RDS(on)) at 52 A continuous drain current for minimal conduction losses
- HiP247-4 package with built-in diode enables compact, high-power-density designs in EV drivetrain and industrial inverters
Applications
The SCTWA60N12G2-4AG is engineered for automotive electric vehicle (EV) traction inverters, on-board chargers (OBC), and DC-DC converters where high-voltage switching efficiency is critical. Its SiC technology enables switching at frequencies above 100 kHz with significantly reduced switching losses compared to conventional silicon IGBTs, making it ideal for industrial motor drives and solar inverters as well.
Specifications
| YTEOL | 0 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200V |
| Drain Current-Max (ID) | 52A |
| Drain-source On Resistance-Max | 0.058Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 18pF |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 388W |
| Pulsed Drain Current-Max (IDM) | 156A |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | Mainland China |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for SCTWA60N12G2-4AG:
Power Field-Effect Transistor, 52A I(D), 1200V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Frequently Asked Questions
What are the key electrical ratings of the SCTWA60N12G2-4AG SiC MOSFET?
The SCTWA60N12G2-4AG is rated for 1200 V drain-source breakdown voltage, 52 A continuous drain current (ID), and a maximum drain-source on-resistance (RDS(on)) of 58 mΩ, with a typical value of 45 mΩ, making it suitable for high-power automotive and industrial applications.
Is the SCTWA60N12G2-4AG suitable for automotive EV inverter designs that require AEC-Q101 qualification?
Yes, the SCTWA60N12G2-4AG is fully AEC-Q101 qualified for automotive environments. Its SiC construction supports junction temperatures up to 175°C and allows switching frequencies above 100 kHz, enabling compact EV inverter designs with reduced heat sink requirements and improved overall system efficiency.
How does the HiP247-4 package of the SCTWA60N12G2-4AG benefit high-power PCB layouts?
The HiP247-4 package includes a Kelvin source pin for precise gate drive control, reducing switching losses significantly. It provides 4 electrical connections in an industry-standard through-hole footprint measuring approximately 16 mm × 21 mm, simplifying thermal management in motor drive and solar inverter designs.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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