MOSFET (P-Channel)

SUP75P03-07-E3 is a Vishay Diode for protection, switching, and rectification circuits. Key specs include 30V, 75A, and Transistor Outline, Vertical integration. From RFQ pricing in stock for worldwide shipping.

IPD380P06NM is a mosfet (p-channel) component by Infineon. Key specs: 3 pins, manufacturer-controlled ordering code, production sourcing support. From quote-based pricing, with in-stock sourcing and worldwide shipping through FindMyChip.

SI3443CDV-T1-GE3 is a Vishay mosfet (p-channel) for electronic assembly, repair, and production sourcing. It provides documented component specifications and a 6-pin configuration where applicable. From RFQ pricing with stock checks and worldwide shipping.

SI4423DY-T1-E3 is a MOSFET P-Channel from Vishay for switching and power-control. It provides 8 pins in Small Outline Packages format for repeatable production sourcing. From $0.00 in stock worldwide shipping.

MOSFET 4 P-CH 8V 16SOIC PRECISION P-CHANNEL EPAD® MOSFET ARRAY

X4-DSN1006-3

SPP15P10PLHXKSA1 is a Infineon transistor for board-level electronic assemblies. Key specs include 3 pins and 11.3 A. From RFQ pricing, FindMyChip supports stock checks and worldwide shipping.

MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs

TSM680P06DPQ56 RLG is a MOSFET P-Channel from Taiwan Semiconductor for switching and power-control. It provides 10 pins in 10-pin layout for repeatable production sourcing. From $0.00 in stock worldwide shipping.

SQM110P06-8m9L_GE3 is a Vishay mosfet (p-channel) for electronic assemblies, maintenance BOMs, and production sourcing. Key specs include 3 pins, 60 V, manufacturer-specified package. From RFQ pricing with in-stock sourcing and worldwide shipping support.

IPD80P03P4L07ATMA1 is a Infineon mosfet (p-channel) for electronic assemblies, maintenance BOMs, and production sourcing. Key specs include 3 pins, manufacturer-specified package. From RFQ pricing with in-stock sourcing and worldwide shipping support.

IRF9Z24PBF from Vishay is a mosfet (p-channel) for industrial, consumer, and embedded electronic assemblies. Key specs include 3 pins, 175°C maximum, and Transistor Outline, Vertical. RFQ sourcing supports in-stock checks and worldwide shipping.

TSM2307CX RFG from Taiwan Semiconductor is a mosfet (p-channel) for industrial, consumer, and embedded electronic assemblies. Key specs include 3 pins, 3 A, and SOT23 (3-Pin). RFQ sourcing supports in-stock checks and worldwide shipping.

IRF9Z24NSTRLPBF from Infineon is a mosfet (p-channel) for industrial, consumer, and embedded electronic assemblies. Key specs include 3 pins, -55°C to 175°C, and manufacturer package geometry. RFQ sourcing supports in-stock checks and worldwide shipping.

Infineon SPD04P10PL G is a P-channel power MOSFET rated at -100 V drain-to-source voltage and 4.2 A continuous drain current in a DPAK-2 surface mount package. Features low on-state resistance and fast switching for efficient load switching and motor drive applications. Available from stock with worldwide shipping for power management designs.

The SPD18P06PGBTMA1 is a P-channel power MOSFET from Infineon rated at -60 V drain-source breakdown voltage and -18.6 A continuous drain current, featuring a low 0.13 Ω on-resistance and 150 mJ avalanche energy rating in a DPAK-2 surface mount package. It includes a built-in body diode and avalanche protection for robust load-switching and motor-drive designs. Available worldwide for high-volume production.

Alpha & Omega Semiconductors AON7405 is a P-Channel MOSFET in DFN-8 package with 30 V breakdown voltage, 50 A maximum drain current, and ultra-low 6.2 mΩ on-resistance. It features a single configuration with built-in diode and 97 mJ avalanche energy rating, ideal for high-current power switching and load management applications.

BSZ086P03NS3EG is a 03NS 40A resistor by Infineon. Key specs: 03NS, 40A, -30V. From quote-based pricing, in stock with worldwide shipping for production sourcing for production BOM sourcing.

MOSFET P-Ch -100V -680mA SOT-223-3

Infineon IPD90P03P4L04ATMA1 is a MOSFET (P-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins, 30 V, 90A in 3-pin package. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

Vishay SQM40P10-40L_GE3 is a MOSFET (P-Channel) for embedded electronics, industrial controls, instrumentation, and production BOM sourcing. It offers 3 pins in 3-pin package. From quote-based sourcing, buyers can request stock checks and worldwide shipping support.

MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs

UMT3, 3 PIN

STRH40P10HY1 is a radiation-hardened 100 V, 34 A P-channel power MOSFET from STMicroelectronics in a TO-254AA package. Features 75 mOhm on-resistance, 1133 mJ avalanche energy rating, and built-in body diode for space-grade power switching. Available worldwide with fast shipping.

STMicroelectronics STRH40P10HYT is a radiation-hardened P-channel power MOSFET rated at 100V drain-source voltage and 34A drain current with 75 mΩ on-resistance in a TO-254AA package. It delivers robust avalanche energy handling of 1133 mJ for space and high-reliability power switching applications. Available in stock with worldwide shipping.

STMicroelectronics SCTWA60N120G2AG is an automotive-grade silicon carbide N-channel power MOSFET rated at 1200 V and 52 A with a typical on-resistance of 45 mΩ in the HiP247 long-lead package. Qualified to AEC-Q101 for harsh automotive environments. Available from global distributors with volume pricing.

STMicroelectronics SCTWA40N120G2V is a 1200 V, 36 A silicon carbide N-channel power MOSFET with 62 mΩ typical Rds(on) in an HiP247 long-lead package. From $18.00 in stock with worldwide shipping.

Automotive-grade P-channel -80 V, 18.5 mΩ typ., -40 A STripFET™ F6 Power MOSFET in a DPAK package

Use the download button to access the STD52P3LLH6 schematic symbol and PCB footprint.

STRH12P10GYG from STMicroelectronics is a power MOSFET for load switching, motor drives, power conversion, and protection circuits. Key specifications include 100V, 12A, 5.05A, 0.3ohm, Transistor Outline, Vertical package/footprint, supporting reliable selection for OEM maintenance, prototyping, and production BOMs. The Transistor Outline, Vertical format supports standard assembly and sourcing workflows.

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package

STRH12P10GYT is a radiation-hardened P-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown and 12 A drain current with a 0.3 ohm on-resistance. It integrates a built-in diode, features 112 mJ avalanche energy rating, and is housed in a TO-257AA 3-pin package for space and high-reliability applications. Designed for spacecraft power switching, satellite power management, and rad-hard industrial power control circuits.

Use the download button to access the SCTWA30N120 schematic symbol, PCB footprint, and 3D model.

P-channel -30 V, 11 mΩ typ., -45 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package

Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package

STMicroelectronics SCTWA60N12G2-4AG is an automotive-grade silicon carbide (SiC) Power MOSFET rated at 1200 V and 52 A with 45 mΩ typical on-resistance in an HiP247-4 package. Designed for AEC-Q101 compliance, it delivers high efficiency in demanding EV and industrial power conversion applications.

P-Channel 16.5 V 500mA (Tj) 1W (Tc) Through Hole TO-92

MOSFET 30V 0.6Ohm

Microchip TP2540N3-G is a P-channel MOSFET with 400 V breakdown voltage, 30 Ω max drain-source on resistance, 86 mA drain current, and a built-in body diode in TO-92-3 package. From $0.80 in stock, worldwide shipping.

DPAK-3/2

The VP2206N3-G is a P-channel enhancement-mode vertical DMOS FET from Microchip with a 60 V breakdown voltage and 0.64 A drain current in a TO-92 package. Its 0.9 Ω on-resistance and built-in body diode suit low-side switching and load management applications.

Microchip VP2450N3-G is a P-channel MOSFET rated 500 V drain-source breakdown with 0.1 A drain current and 30 Ω on-resistance in a TO-92 package. Built-in body diode suits flyback and switching topologies. Available from stock with worldwide shipping.

MIC94050YM4 TR is a P-channel MOSFET from Microchip (Micrel) rated at 1.8 A continuous drain current and 6 V maximum drain-to-source voltage. It is designed for low-voltage load switching and power control in handheld and portable applications. Supplied in a 4-pin SOT-143 surface-mount package with tape-and-reel packaging for automated assembly.

The TP2104N3 is a P-channel MOSFET from Microchip rated at 40 V drain-source voltage with 6 ohm on-state resistance for efficient low-side and high-side switching applications. It is suitable for load switching, battery protection, and power management circuits requiring a reliable P-channel device. Available in a compact through-hole or surface-mount package for versatile PCB integration.

TP0606N3-G-P002 is a P-channel enhancement mode MOSFET from Microchip in a TO-92-3 package, rated for 60 V drain-source breakdown voltage and 0.32 A maximum drain current with 3.5 Ω maximum on-resistance. Features a built-in body diode and 35 pF feedback capacitance for low-side switching applications. Available from stock worldwide.

Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island

P-Channel 40 V 430mA (Tj) 740mW (Ta) Through Hole TO-92-3

MOSFET 100V 12Ohm

Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package

Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package