VP2450N3-G Microchip MOSFET (P-Channel) (Other) In Stock
Microchip VP2450N3-G is a P-channel MOSFET rated 500 V drain-source breakdown with 0.1 A drain current and 30 Ω on-resistance in a TO-92 package. Built-in body diode suits flyback and switching topologies. Available from stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VP2450N3-G Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $1.1300(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of VP2450N3-G?
- 500 V drain-source breakdown voltage with integrated body diode enables direct use in offline flyback, buck-boost, and high-voltage switching circuits without external clamping
- Low feedback capacitance (Crss) of 20 pF maximum reduces Miller effect, improving switching speed and efficiency at high voltage in TO-92 single-transistor topologies
- Compact TO-92-3 package with P-channel enhancement-mode operation simplifies high-side switch design in 100 mA load circuits without inverting drive logic
What is VP2450N3-G used for?
The VP2450N3-G is suited for high-voltage switch-mode power supply auxiliary circuits, gate drive bias supplies, and low-current offline AC-DC converters operating from 85 V to 400 V DC bus. Its 500 V rating and 30 Ω on-resistance make it appropriate for standby power stages, burst-mode controllers, and snubber-free clamping networks in flyback adapters. The TO-92 footprint and P-channel topology also fit simple high-side load switches and overvoltage protection circuits in industrial sensor modules.
What are the specifications of VP2450N3-G?
| Manufacturer Package Code | TO-92-3 |
| YTEOL | 9 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 500V |
| Drain Current-Max (ID) | 0.1A |
| Drain-source On Resistance-Max | 30Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 20pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 0.74W |
| Power Dissipation-Max (Abs) | 0.74W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines, Taiwan |
Where can I find the VP2450N3-G datasheet?
VP2450N3-G Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for VP2450N3-G?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum drain current and on-resistance of the VP2450N3-G, and what load power does this support?
The VP2450N3-G is rated for a maximum drain current of 100 mA and a drain-source on-resistance of 30 Ω, resulting in a conduction loss of approximately 0.3 W at full current. This makes it suitable for low-power auxiliary loads and bias supplies up to about 50 mW continuous at 500 V.
How does the 20 pF feedback capacitance of the VP2450N3-G affect high-voltage switching performance?
A low feedback capacitance (Crss) of 20 pF maximum limits the Miller charge during voltage transitions, reducing the gate drive current required to switch the device at 100 kHz or faster. This means a simple resistor-bias drive circuit can achieve clean transitions in flyback auxiliary winding circuits without elaborate gate drivers.
When is the VP2450N3-G a suitable choice over an NPN BJT for a high-side switch in a 400 V offline circuit?
Unlike an NPN BJT, the P-channel MOSFET VP2450N3-G can be turned on by pulling its gate low relative to the source, making it directly usable as a high-side switch in 400 V circuits without a level-shifting bootstrap capacitor. The built-in body diode also provides inherent reverse-current protection, reducing BOM in simple 100 mA load-control or snubber topologies.
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