MOSFET (P-Channel)

MOSFET (P-Channel) components are essential building blocks in modern electronic systems. FindMyChip sources MOSFET (P-Channel) ICs from authorized China distributors with competitive pricing and reliable stock.

298 components

How to Choose MOSFET (P-Channel) Components

  • 1Verify electrical specifications (voltage, current, frequency) match your design requirements.
  • 2Check package footprint and thermal characteristics against your PCB layout constraints.
  • 3Confirm lifecycle status and long-term availability for production designs.

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All MOSFET (P-Channel) Components

Showing 251298 of 298

MIC94053YC6-TRMicrochip

MOSFET 1.8V-rated PFET w/Vgs pull-up

STL30P3LLH6STMicroelectronics

Use the download button to access the STL30P3LLH6 schematic symbol, PCB footprint, and 3D model.

STS3DPF20VSTMicroelectronics

MOSFET P-Ch 20 Volt 3 Amp

STL9P3LLH6STMicroelectronics

Use the download button to access the STL9P3LLH6 schematic symbol, PCB footprint, and 3D model.

STL62P3LLH6STMicroelectronics

Use the download button to access the STL62P3LLH6 schematic symbol, PCB footprint, and 3D model.

MIC94053YC6 TRMicrochip

Micrel MIC94053YC6 TR P-channel MOSFET Transistor, ±2 A, -6 V, 6-Pin SC-70

STS10P3LLH6STMicroelectronics

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. SO-8 package

STD37P3H6AGSTMicroelectronics

MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

VP2106N3-GMicrochip

VP2106N3-G is a single P-channel MOSFET from Microchip in a TO-92-3 through-hole package with built-in body diode. Offers 60 V breakdown voltage, 250 mA drain current, and 12 Ω on-resistance. Available in stock with worldwide shipping.

STD15P6F6AGSTMicroelectronics

MOSFET Automotive-grade P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in a DPAK package

STL4P3LLH6STMicroelectronics

P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

STS5P3LLH6STMicroelectronics

Use the download button to access the STS5P3LLH6 schematic symbol, PCB footprint, and 3D model.

STD10PF06STMicroelectronics

STD10PF06 is an integrated circuit by STMicroelectronics. Key specs include Avalanche Energy Rating (Eas): 125 mJ; DS Breakdown Voltage-Min: 60 V. From RFQ price checks to worldwide shipping, FindMyChip supports sourcing.

STD10PF06-1STMicroelectronics

Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube

STT4P3LLH6STMicroelectronics

P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package

STP10P6F6STMicroelectronics

TO-220, 3 PIN

STT7P2UH7STMicroelectronics

STMICROELECTRONICS - STT7P2UH7 - MOSFET, P-CH, -20V, -7A, SOT-23

STD35P6LLF6STMicroelectronics

DPAK-3/2

STD10P6F6STMicroelectronics

DPAK-3/2

STS10P4LLF6STMicroelectronics

Use the download button to access the STS10P4LLF6 schematic symbol, PCB footprint, and 3D model.

STS7P4LLF6STMicroelectronics

SOP-8

STR2P3LLH6STMicroelectronics

P-channel -30 V, 48 mΩ typ., -2 A STripFET™ H6 Power MOSFET in a SOT‑23 package

STL42P6LLF6STMicroelectronics

Use the download button to access the STL42P6LLF6 schematic symbol, PCB footprint, and 3D model.

STD28P3LLH6AGSTMicroelectronics

Use the download button to access the STD28P3LLH6AG schematic symbol, PCB footprint, and 3D model.

STD10P10F6STMicroelectronics

DPAK-3/2

STD36P4LLF6STMicroelectronics

Use the download button to access the STD36P4LLF6 schematic symbol, PCB footprint, and 3D model.

STD30PF03LT4STMicroelectronics

STMicroelectronics STD30PF03LT4 is a P-channel STripFET power MOSFET rated 30V, 24A with ultra-low 40 milliohm on-resistance and 850mJ avalanche energy rating. Housed in a DPAK (TO-252) surface-mount package for high-efficiency load switching and motor control in automotive and industrial applications.

STD26P3LLH6STMicroelectronics

The STMicroelectronics STD26P3LLH6 is a P-channel power MOSFET with a 30V breakdown voltage, 12A continuous drain current, and ultra-low 45mΩ on-resistance in a DPAK (TO-252) package. It includes a built-in body diode and features 350 mJ avalanche energy rating for robust protection. Available from stock with worldwide shipping at competitive pricing.

CSD23381F4Texas Instruments

Use the download button to access the CSD23381F4 schematic symbol, PCB footprint, and 3D model.

CSD25483F4TTexas Instruments

MOSFET 20V,P-Ch FemtoFET MOSFET

CSD25484F4Texas Instruments

MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection 3-PICOSTAR -55 to 150

VP0106N3-GMicrochip

MOSFET 60V 8Ohm

TPS1110DTexas Instruments

Texas Instruments TPS1110D is a single P-channel logic-level MOSFET with built-in diode, rated at 6A drain current and 75mΩ on-resistance with 7V breakdown voltage. It is logic-level compatible for direct MCU gate drive in an 8-pin SOIC package. Available from stock with worldwide shipping.

CSD25485F5TTexas Instruments

Use the download button to access the CSD25485F5T schematic symbol, PCB footprint, and 3D model.

CSD25310Q2TTexas Instruments

MOSFET CSD25310Q2 20 V P-Channel NexFET Power MOSFETs

CSD22205LTTexas Instruments

-8V, P ch NexFET MOSFET™, single LGA 1.2x1.2, 9.9mOhm

CSD23285F5TTexas Instruments

TEXAS INSTRUMENTS - CSD23285F5T - MOSFET, P-CH, -12V, -5.4A, PICOSTAR

CSD22205LTexas Instruments

-8V, P ch NexFET MOSFET™, single LGA 1.2x1.2, 9.9mOhm

CSD25302Q2Texas Instruments

The CSD25302Q2 is a P-Channel power MOSFET from Texas Instruments rated at -20 V drain-source voltage and -5 A continuous drain current. Key specs include 92 mΩ max Rds(on) and avalanche-rated robustness in a compact 6-pin SON package. Available from stock with worldwide shipping.

CSD19502Q5BTexas Instruments

N-Channel, 3.4mOhm, 80V, SON5x6 NexFET™ Power MOSFET, CSD19502Q5B

CSD23382F4Texas Instruments

Use the download button to access the CSD23382F4 schematic symbol, PCB footprint, and 3D model.

CSD23280F3TTexas Instruments

TEXAS INSTRUMENTS - CSD23280F3T - MOSFET, P-CH, -12V, -1.8A, LGA-3

CSD23285F5Texas Instruments

-12V, P ch NexFET MOSFET™, single LGA 0.8x1.5, 35mOhm

CSD25310Q2Texas Instruments

CSD25310Q2 is a -20V P-Channel NexFET MOSFET in a compact SON 2x2 package with 23.9mΩ on-resistance and -9.6A drain current. From $0.11 in stock, worldwide shipping.

CSD25484F4TTexas Instruments

Use the download button to access the CSD25484F4T schematic symbol, PCB footprint, and 3D model.

CSD25481F4TTexas Instruments

Use the download button to access the CSD25481F4T schematic symbol, PCB footprint, and 3D model.

CSD25480F3Texas Instruments

-20V, P ch NexFET MOSFET™, single LGA 0.6x0.7, 159mOhm

CSD25404Q3Texas Instruments

-20V, P ch NexFET MOSFET™, single SON 3x3, 6.5mOhm

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