VP2206N3-G Microchip MOSFET (P-Channel) (Other) In Stock

Name: VP2206N3-G
Brand: Microchip
SKU: VP2206N3-G
Availability: InStock

The VP2206N3-G is a P-channel enhancement-mode vertical DMOS FET from Microchip with a 60 V breakdown voltage and 0.64 A drain current in a TO-92 package. Its 0.9 Ω on-resistance and built-in body diode suit low-side switching and load management applications.

ACTIVEMOSFET (P-Channel)Verified Jun 2026

Package / Visual Reference

VP2206N3-GOther

Quick Facts

Manufacturer: Microchip
Package: Other
Pin Count: 3
Lifecycle: ACTIVE
Datasheet: VP2206N3-G Datasheet PDF
Category: MOSFET (P-Channel)
Price: From $1.1900(MOQ 1)
Temp Range: -55.0°C to 150.0°C
RoHS: Compliant
Lead Time: 3–7 business days
Shipping: DHL Express · Worldwide

What are the key features of VP2206N3-G?

60 V minimum drain-source breakdown voltage with 0.64 A continuous drain current for robust switching
0.9 Ω maximum on-resistance reducing conduction losses in low-current P-channel switch circuits
Built-in body diode in compact TO-92 through-hole package simplifying discrete switch designs

What is VP2206N3-G used for?

The VP2206N3-G is used in low-voltage P-channel load switch circuits, battery protection modules, and reverse-polarity protection in portable electronics. Its 60 V rating and 40 pF feedback capacitance enable clean switching in DC power management stages. The through-hole TO-92 package makes it easy to prototype and assemble in hobbyist and low-volume industrial control boards.

What are the specifications of VP2206N3-G?

Manufacturer Package Code	TO-92-3
Factory Lead Time	7Weeks
YTEOL	8
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60V
Drain Current-Max (ID)	0.64A
Drain-source On Resistance-Max	0.9Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	40pF
JEDEC-95 Code	TO-92
JESD-30 Code	O-PBCY-T3
JESD-609 Code	e3
Number of Elements	1
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	ROUND
Package Style	CYLINDRICAL
Polarity/Channel Type	P-CHANNEL
Power Dissipation Ambient-Max	0.74W
Power Dissipation-Max (Abs)	0.74W
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Finish	Matte Tin (Sn)
Terminal Form	THROUGH-HOLE
Terminal Position	BOTTOM
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Package	Other

Compliance & Regulatory

RoHS Status	Compliant
Lead-Free	Yes (Pb-Free)
ECCN	EAR99
HTS Code	8541.29.00.95
Country of Origin	Philippines, Taiwan

Where can I find the VP2206N3-G datasheet?

VP2206N3-G Datasheet Download

Official datasheet from Microchip

What are equivalent replacements for VP2206N3-G?

No known alternates. Submit an RFQ and our team can suggest alternatives.

Frequently Asked Questions

Can VP2206N3-G handle continuous load switching in a 12 V automotive accessory circuit?

VP2206N3-G has a 60 V drain-source breakdown and 0.64 A maximum drain current, comfortably covering 12 V automotive accessories drawing under 640 mA. Its 0.9 Ω on-resistance produces a voltage drop of roughly 0.58 V at full load, which is acceptable for most low-current accessory switches.

How does the TO-92 package of VP2206N3-G affect PCB layout compared to SOT-23 alternatives?

The TO-92 through-hole package has 2.54 mm pin pitch and leads that insert into standard 0.8 mm PCB holes, occupying more vertical height than a SOT-23 but requiring no reflow soldering. This makes VP2206N3-G easier to hand-solder during prototyping and simplifies single-sided PCB layouts with 3 radial pads.

What gate threshold voltage should be expected when driving VP2206N3-G from a 5 V logic signal?

P-channel vertical DMOS FETs like VP2206N3-G typically have a gate threshold between -1 V and -3 V, so a logic signal pulling the gate to 0 V against a 5 V source-side supply provides a 5 V gate overdrive, which fully enhances the channel and minimizes the 0.9 Ω on-resistance for efficient conduction.

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AvailabilityIn Stock

Reference Price (USD)

From $1.1900

Buy from 1pc · Factory-direct pricing

Qty.	Unit Price	Ext. Price
1+	$2.5700	$2.57
5+	$2.2230	$11.11
10+	$1.7800	$17.80
25+	$1.5600	$39.00
100+	$1.4600	$146.00
3000+	$1.1900	$3570.00

pcs

Unit price: $2.5700 · Total: $2.57

In Stock · 24h Response · Worldwide Shipping

Direct Contact

WhatsApp Inquiry Email RFQ

Lead Time3-7 business days

MOQFrom 1 piece

ShippingDHL / FedEx / UPS

OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

“The anti-counterfeit verification gave us confidence we'd never had with other China suppliers.”

Rajesh Patel

Procurement Manager, VoltEdge Energy, India

VP2206N3-G Microchip MOSFET (P-Channel) (Other) In Stock

What are the key features of VP2206N3-G?

What is VP2206N3-G used for?

What are the specifications of VP2206N3-G?

Compliance & Regulatory

Where can I find the VP2206N3-G datasheet?

What are equivalent replacements for VP2206N3-G?

Frequently Asked Questions

Can VP2206N3-G handle continuous load switching in a 12 V automotive accessory circuit?

How does the TO-92 package of VP2206N3-G affect PCB layout compared to SOT-23 alternatives?

What gate threshold voltage should be expected when driving VP2206N3-G from a 5 V logic signal?

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