TP0606N3-G-P002 Microchip MOSFET (P-Channel) (Other) In Stock
TP0606N3-G-P002 is a P-channel enhancement mode MOSFET from Microchip in a TO-92-3 package, rated for 60 V drain-source breakdown voltage and 0.32 A maximum drain current with 3.5 Ω maximum on-resistance. Features a built-in body diode and 35 pF feedback capacitance for low-side switching applications. Available from stock worldwide.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TP0606N3-G-P002 Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.6089(MOQ 100)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TP0606N3-G-P002?
- 60 V drain-source breakdown voltage with 0.32 A continuous drain current for low-power load switching
- 3.5 Ω maximum drain-source on-resistance enabling efficient conduction in small-signal P-channel circuits
- Built-in body diode with 35 pF feedback capacitance in compact TO-92-3 through-hole package for easy prototyping
What is TP0606N3-G-P002 used for?
TP0606N3-G-P002 is suited for low-power load switching, reverse polarity protection, and analog signal routing in battery-operated and consumer electronics where a compact through-hole P-channel MOSFET is needed. Its 60 V rating allows use in automotive accessory circuits and 48 V industrial low-side control applications. The TO-92-3 package simplifies hand-assembly during prototyping and small-batch production.
What are the specifications of TP0606N3-G-P002?
| Pbfree Code | Yes |
| Manufacturer Package Code | TO-92-3 |
| YTEOL | 8 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 0.32A |
| Drain-source On Resistance-Max | 3.5Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 35pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1W |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Where can I find the TP0606N3-G-P002 datasheet?
TP0606N3-G-P002 Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TP0606N3-G-P002?
No known alternates. Submit an RFQ and our team can suggest alternatives.
Frequently Asked Questions
What is the maximum continuous drain current of TP0606N3-G-P002 and what load can it switch?
The TP0606N3-G-P002 supports a maximum continuous drain current of 0.32 A and a drain-source breakdown voltage of 60 V, allowing it to switch resistive or inductive loads up to approximately 19 W in single-supply automotive or industrial 12 V to 48 V systems.
How does the 3.5 Ω on-resistance of TP0606N3-G-P002 impact power dissipation at full load?
At the maximum 0.32 A drain current, the 3.5 Ω on-resistance of TP0606N3-G-P002 produces about 358 mW of conduction loss. The TO-92-3 package has limited thermal dissipation, so designs should keep duty cycle or ambient temperature low to stay within the device's junction temperature limit.
For which circuit topologies is the built-in body diode of TP0606N3-G-P002 most beneficial?
The integrated body diode in TP0606N3-G-P002 provides a natural freewheeling path for inductive load switching, protecting the drain from voltage spikes up to 60 V. This eliminates an external Schottky diode in motor coil, relay driver, and solenoid control circuits, reducing BOM and board space.
When is TP0606N3-G-P002 a better fit than an SOT-23 P-channel MOSFET for prototyping?
The TO-92-3 through-hole package of TP0606N3-G-P002 inserts directly into breadboards and DIP-style prototype boards without adapters, making it faster to validate P-channel switch designs at 60 V before committing to a surface-mount SOT-23 variant in production layout.
Related Guides
DP83TG720SWRHATQ1 Automotive Ethernet PHY Selection Guide
Choose DP83TG720SWRHATQ1 by comparing MAC interfaces, exact ordering codes, qualification evidence, and documented supply offers.
Nov 15, 2026
TLV76033 Selection Guide: Headroom, Heat, and Sourcing
Choose a TLV76033 3.3-V supply using manufacturer ratings, load profiles, dropout calculations, thermal checks, and exact orderable parts.
Nov 14, 2026
DP83TG720SWRHATQ1 Automotive Ethernet Board Design Guide
A practical DP83TG720SWRHATQ1 board checklist for host interfaces, startup, channel validation, qualified variants, and sourcing.
Nov 14, 2026
BQ76942PFBR Battery Monitor Selection and Procurement Guide
Choose BQ76942PFBR by cell count, protection architecture, factory configuration, measurement needs, and a controlled sourcing specification.
Nov 13, 2026
Why Buy from FindMyChip
About Microchip
Microchip is a leading electronic component manufacturer. FindMyChip sources Microchip ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from Microchip
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.7000 | $70.00 |
| 500+ | $0.6600 | $330.00 |
| 1500+ | $0.6440 | $966.00 |
| 2000+ | $0.6310 | $1262.00 |
| 8000+ | $0.6121 | $4896.56 |
| 16000+ | $0.6089 | $9742.72 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Response time is incredible — usually under 4 hours. They understand that production lines can't wait.”
You May Also Like
SPD15P10P G
Infineon
MOSFET (P-Channel)
AO3407A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
SI5403DC-T1-GE3
Vishay
MOSFET (P-Channel)
BSL303SPEH6327XTSA1
Infineon
MOSFET (P-Channel)
SIA427DJ-T1-GE3
Vishay
MOSFET (P-Channel)
SiSS71DN-T1-GE3
Vishay
MOSFET (P-Channel)
SIS407ADN-T1-GE3
Vishay
MOSFET (P-Channel)
SI7157DP-T1-GE3
Vishay
MOSFET (P-Channel)
BSO201SPHXUMA1
Infineon
MOSFET (P-Channel)
AOD4189
Alpha & Omega Semiconductors
MOSFET (P-Channel)
AOD417
Alpha & Omega Semiconductors
MOSFET (P-Channel)
IPD50P04P4L11ATMA1
Infineon
MOSFET (P-Channel)
AO3401A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
RQ5L015SPTL
ROHM Semiconductor
MOSFET (P-Channel)
DMP3130LQ-7
Diodes Inc.
MOSFET (P-Channel)
BUZ906P
Magnatec
MOSFET (P-Channel)
ZXM61P02FTA
Diodes Inc.
MOSFET (P-Channel)
ZVP3310FTA
Diodes Inc.
MOSFET (P-Channel)
SPP80P06PHXKSA1
Infineon
MOSFET (P-Channel)
BSP171P
Infineon
MOSFET (P-Channel)
SQ2319ADS-T1_GE3
Vishay
MOSFET (P-Channel)
SI7101DN-T1-GE3
Vishay
MOSFET (P-Channel)
IPB80P04P4L08ATMA1
Infineon
MOSFET (P-Channel)
TPCA8108(TE12L,Q)
Toshiba
MOSFET (P-Channel)