VP2106N3-G Microchip MOSFET (P-Channel) (Other) In Stock
VP2106N3-G is a single P-channel MOSFET from Microchip in a TO-92-3 through-hole package with built-in body diode. Offers 60 V breakdown voltage, 250 mA drain current, and 12 Ω on-resistance. Available in stock with worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- VP2106N3-G Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $0.1800(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- P-channel MOSFET with 60 V drain-source breakdown voltage and integrated built-in diode simplifying reverse-polarity protection circuits
- Ultra-low 250 mA maximum drain current (ID) and 12 Ω R_DS(on) optimized for low-power switching in signal-level applications
- TO-92-3 through-hole package with high input impedance and 8 pF feedback capacitance (Crss) for low-distortion analog switching
Applications
VP2106N3-G is suitable for low-side P-channel switching in battery-management circuits, reverse-polarity protection, and signal routing applications operating up to 60 V. Its 250 mA current rating and high input impedance make it appropriate for analog signal switching and small-signal load control in prototyping and industrial sensor interfaces. The compact TO-92-3 package enables easy hand-soldering and breadboard integration during development.
Specifications
| Manufacturer Package Code | TO-92-3 |
| YTEOL | 10 |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60V |
| Drain Current-Max (ID) | 0.25A |
| Drain-source On Resistance-Max | 12Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 8pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 1W |
| Power Dissipation-Max (Abs) | 1W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines, Taiwan |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for VP2106N3-G:
suggested
suggested
Frequently Asked Questions
What are the key electrical limits of the VP2106N3-G P-channel MOSFET for circuit protection designs?
The VP2106N3-G has a 60 V minimum drain-source breakdown voltage and supports up to 250 mA maximum drain current with a 12 Ω on-resistance. The built-in diode makes it particularly useful for reverse-polarity protection topologies without adding an external Schottky diode.
How does the 8 pF feedback capacitance of VP2106N3-G benefit analog signal switching designs?
The low 8 pF maximum feedback capacitance (Crss) minimizes charge injection and switching transients when VP2106N3-G is used as an analog switch in audio or sensor signal paths. This keeps signal integrity high in circuits operating at moderate frequencies, especially when the source impedance is relatively low.
Why is the TO-92-3 through-hole package of VP2106N3-G advantageous for low-volume or prototype builds?
The TO-92 package allows hand-soldering directly onto perfboard or breadboard without SMD tooling, reducing assembly cost for prototypes and small-batch runs. With a footprint in the JEDEC-95 TO-92 standard, designers can easily replace it with similarly rated P-channel MOSFETs in the same package.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1800 | $0.18 |
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