STRH12P10GYT STMicroelectronics MOSFET (P-Channel) (Transistor Outline, Vertical) In Stock
STRH12P10GYT is a radiation-hardened P-channel power MOSFET from STMicroelectronics rated at 100 V drain-source breakdown and 12 A drain current with a 0.3 ohm on-resistance. It integrates a built-in diode, features 112 mJ avalanche energy rating, and is housed in a TO-257AA 3-pin package for space and high-reliability applications. Designed for spacecraft power switching, satellite power management, and rad-hard industrial power control circuits.
- Manufacturer
- STMicroelectronics
- Package
- Transistor Outline, Vertical
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- STRH12P10GYT Datasheet PDF
- Category
- MOSFET (P-Channel)
- Temp Range
- ?°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- Radiation-hardened P-channel MOSFET with 100 V breakdown voltage and 12 A drain current for space and satellite power switching
- Low 0.3 ohm maximum drain-source on-resistance (RDS(on)) minimizing conduction losses in high-side power switching circuits
- 112 mJ avalanche energy rating (Eas) providing robust protection against inductive load switching transients in rad-hard designs
- Built-in body diode and 85 pF feedback capacitance in TO-257AA package enabling single-device high-side switch implementation
Applications
The STRH12P10GYT is designed for radiation-hardened power management circuits in satellites, spacecraft, and high-reliability industrial systems where a 100 V, 12 A P-channel MOSFET with guaranteed performance under total ionizing dose (TID) radiation is required. Its 0.3 ohm on-resistance and integrated built-in diode make it suitable for high-side power switches, battery management circuits, and solar array regulators in space electronics. It is also used in rad-hard motor drivers and DC-DC converters operating in nuclear environments or high-altitude avionics requiring guaranteed 100 V P-channel switching capability.
Specifications
| YTEOL | 5.05 |
| Avalanche Energy Rating (Eas) | 112mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100V |
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 0.3Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 85pF |
| JEDEC-95 Code | TO-257AA |
| JESD-30 Code | R-XSFM-P3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 75W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Reference Standard | EUROPEAN SPACE AGENCY; RH - 100K Rad(Si) |
| Surface Mount | NO |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 60.5ns |
| Turn-on Time-Max (ton) | 46ns |
| Package | Transistor Outline, Vertical |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| Country of Origin | France |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for STRH12P10GYT:
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Frequently Asked Questions
What are the key power handling parameters of the STRH12P10GYT for designing rad-hard high-side power switches?
The STRH12P10GYT is rated for 100 V drain-source breakdown voltage, 12 A maximum drain current, and 0.3 ohm maximum RDS(on) at rated conditions, with a 112 mJ avalanche energy rating for inductive switching protection. These parameters enable reliable high-side P-channel switching in satellite power buses, spacecraft power regulators, and radiation-exposed industrial applications requiring low conduction loss and high avalanche ruggedness.
How does the radiation-hardened qualification of the STRH12P10GYT affect its suitability compared to standard P-channel MOSFETs in space applications?
Standard commercial P-channel MOSFETs degrade under total ionizing dose (TID) and single-event effects (SEE) encountered in space, causing threshold voltage shifts and increased leakage that compromise circuit reliability. The STRH12P10GYT is radiation-hardened by design, maintaining its 100 V, 12 A, 0.3 ohm performance specifications after exposure to radiation levels typical of LEO and GEO satellite missions, making it the required choice over standard MOSFETs for space power electronics.
What does the built-in diode in the STRH12P10GYT provide, and when does it benefit satellite power circuit design?
The STRH12P10GYT includes a built-in body diode that provides free-wheeling current conduction during switching transitions, eliminating the need for an external reverse-recovery diode in inductive loads such as satellite thruster drivers, motor controllers, and solar array relays. The integrated diode reduces component count by 1 external part per switch position, simplifying rad-hard PCB design at 100 V, 12 A power levels while maintaining the high reliability required for space missions.
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About STMicroelectronics
STMicroelectronics is a global semiconductor leader serving customers across the spectrum of electronics applications. ST's products are found in a wide range of applications including automotive, industrial, personal electronics, and communications.
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