TP2540N3-G Microchip MOSFET (P-Channel) (Other) In Stock

Microchip TP2540N3-G is a P-channel MOSFET with 400 V breakdown voltage, 30 Ω max drain-source on resistance, 86 mA drain current, and a built-in body diode in TO-92-3 package. From $0.80 in stock, worldwide shipping.

ACTIVEMOSFET (P-Channel)Verified Jun 2026
Package / Visual Reference
TP2540N3-GOther
Quick Facts
Manufacturer
Microchip
Package
Other
Pin Count
3
Lifecycle
ACTIVE
Category
MOSFET (P-Channel)
Price
From $1.1200(MOQ 1)
Temp Range
-55.0°C to 150.0°C
RoHS
Compliant
Lead Time
3–7 business days
Shipping
DHL Express · Worldwide

Key Features

  • 400 V minimum drain-source breakdown voltage for high-voltage analog switching and line protection
  • Low-threshold gate drive enabling control from 3.3 V or 5 V logic with minimal external components
  • Built-in body diode for inductive load protection in relay driver and motor switch circuits
  • 30 Ω max Rds(on) and 25 pF max Crss for low switching loss at 86 mA drain current
  • Through-hole TO-92-3 package for prototype-friendly assembly and easy hand-soldering in service equipment

Applications

The TP2540N3-G is used in high-voltage analog signal switching, relay driver circuits, and load switching applications where a P-channel device with a 400 V rating and low gate threshold is required. Its TO-92-3 through-hole package makes it popular in service tools, power supply protection circuits, and legacy industrial equipment where through-hole components are preferred for rework. It is also employed in AC phase control and lamp dimmer circuits operating from rectified mains voltages up to 400 V.

Specifications

Manufacturer Package CodeTO-92-3
Factory Lead Time7Weeks
YTEOL9
Additional FeatureLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400V
Drain Current-Max (ID)0.086A
Drain-source On Resistance-Max30Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)25pF
JEDEC-95 CodeTO-92
JESD-30 CodeO-PBCY-T3
JESD-609 Codee3
Number of Elements1
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Polarity/Channel TypeP-CHANNEL
Power Dissipation Ambient-Max0.74W
Power Dissipation-Max (Abs)0.74W
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishMatte Tin (Sn)
Terminal FormTHROUGH-HOLE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
## TP2540N3-G Alternates Showing resultsImage
PackageOther

Compliance & Regulatory

RoHS StatusCompliant
Lead-FreeYes (Pb-Free)
ECCNEAR99
HTS Code8541.29.00.95
Country of OriginPhilippines

Datasheet

TP2540N3-G Datasheet Download

Official datasheet from Microchip

Alternate & Equivalent Parts

Compatible alternatives and drop-in replacements for TP2540N3-G:

Frequently Asked Questions

What drain-source breakdown voltage does the TP2540N3-G support, and what supply rails does that cover?

The TP2540N3-G is rated for a minimum 400 V drain-source breakdown voltage, which comfortably covers rectified 230 V AC mains (peak approximately 325 V) with margin. This makes it suitable for high-voltage load switching, relay drivers, and line protection circuits in mains-powered consumer and industrial equipment.

How does the TP2540N3-G's low-threshold gate characteristic benefit circuits controlled by 5 V logic?

The TP2540N3-G features a low gate threshold, allowing it to turn on fully with gate drive voltages compatible with 5 V CMOS or TTL logic outputs. This eliminates the need for additional level-shifting or boosted gate drive circuitry, simplifying the control interface in microcontroller-driven high-voltage switching designs and reducing external component count.

What is the maximum drain current and on-resistance of the TP2540N3-G, and what does that imply for load current capacity?

The TP2540N3-G handles up to 86 mA of drain current with a maximum Rds(on) of 30 Ω. At full load current this produces approximately 2.6 V of conduction drop, so it is best suited for low-current switching tasks such as small relay coils, indicator LEDs, and signal-level analog switches rather than high-current power loads.

Does the TP2540N3-G include a built-in body diode, and why is that important for inductive loads?

Yes, the TP2540N3-G includes a built-in body diode as part of its single MOSFET configuration. When switching inductive loads such as relay coils or small motor windings, the body diode provides a free-wheeling path for the inductive kickback energy when the device turns off, protecting the MOSFET from voltage spikes exceeding its 400 V breakdown rating without needing an external flyback diode.

Related Guides

Why Buy from FindMyChip

Authorized Source
Verified supply chain with full traceability & inspection
$
Competitive Pricing
Factory-direct from China distributors, low MOQ
Fast Shipping
DHL Express 3–5 days · FedEx/UPS 5–7 days worldwide
Quality Guaranteed
30-day replacement for defective parts, no questions asked

About Microchip

Microchip is a leading electronic component manufacturer. FindMyChip sources Microchip ICs directly from authorized China distributors, offering competitive pricing and reliable stock.

AvailabilityIn Stock
Reference Price (USD)
From $1.1200
Buy from 1pc · Factory-direct pricing
Qty.Unit PriceExt. Price
1+$1.7800$1.78
25+$1.4900$37.25
100+$1.3500$135.00
500+$1.3200$660.00
750+$1.3100$982.50
1000+$1.1200$1120.00
pcs
Unit price: $1.7800 · Total: $1.78

In Stock · 24h Response · Worldwide Shipping

Lead Time3-7 business days
MOQFrom 1 piece
ShippingDHL / FedEx / UPS
OriginChina (Authorized)

Response within 24 hours · Worldwide shipping

Response time is incredible — usually under 4 hours. They understand that production lines can't wait.

JW
James Wright
Supply Chain Director, CircuitPro Ltd, UK