TP2540N3-G Microchip MOSFET (P-Channel) (Other) In Stock
Microchip TP2540N3-G is a P-channel MOSFET with 400 V breakdown voltage, 30 Ω max drain-source on resistance, 86 mA drain current, and a built-in body diode in TO-92-3 package. From $0.80 in stock, worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TP2540N3-G Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $1.1200(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
Key Features
- 400 V minimum drain-source breakdown voltage for high-voltage analog switching and line protection
- Low-threshold gate drive enabling control from 3.3 V or 5 V logic with minimal external components
- Built-in body diode for inductive load protection in relay driver and motor switch circuits
- 30 Ω max Rds(on) and 25 pF max Crss for low switching loss at 86 mA drain current
- Through-hole TO-92-3 package for prototype-friendly assembly and easy hand-soldering in service equipment
Applications
The TP2540N3-G is used in high-voltage analog signal switching, relay driver circuits, and load switching applications where a P-channel device with a 400 V rating and low gate threshold is required. Its TO-92-3 through-hole package makes it popular in service tools, power supply protection circuits, and legacy industrial equipment where through-hole components are preferred for rework. It is also employed in AC phase control and lamp dimmer circuits operating from rectified mains voltages up to 400 V.
Specifications
| Manufacturer Package Code | TO-92-3 |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Additional Feature | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 400V |
| Drain Current-Max (ID) | 0.086A |
| Drain-source On Resistance-Max | 30Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 0.74W |
| Power Dissipation-Max (Abs) | 0.74W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| ## TP2540N3-G Alternates Showing results | Image |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Alternate & Equivalent Parts
Compatible alternatives and drop-in replacements for TP2540N3-G:
Frequently Asked Questions
What drain-source breakdown voltage does the TP2540N3-G support, and what supply rails does that cover?
The TP2540N3-G is rated for a minimum 400 V drain-source breakdown voltage, which comfortably covers rectified 230 V AC mains (peak approximately 325 V) with margin. This makes it suitable for high-voltage load switching, relay drivers, and line protection circuits in mains-powered consumer and industrial equipment.
How does the TP2540N3-G's low-threshold gate characteristic benefit circuits controlled by 5 V logic?
The TP2540N3-G features a low gate threshold, allowing it to turn on fully with gate drive voltages compatible with 5 V CMOS or TTL logic outputs. This eliminates the need for additional level-shifting or boosted gate drive circuitry, simplifying the control interface in microcontroller-driven high-voltage switching designs and reducing external component count.
What is the maximum drain current and on-resistance of the TP2540N3-G, and what does that imply for load current capacity?
The TP2540N3-G handles up to 86 mA of drain current with a maximum Rds(on) of 30 Ω. At full load current this produces approximately 2.6 V of conduction drop, so it is best suited for low-current switching tasks such as small relay coils, indicator LEDs, and signal-level analog switches rather than high-current power loads.
Does the TP2540N3-G include a built-in body diode, and why is that important for inductive loads?
Yes, the TP2540N3-G includes a built-in body diode as part of its single MOSFET configuration. When switching inductive loads such as relay coils or small motor windings, the body diode provides a free-wheeling path for the inductive kickback energy when the device turns off, protecting the MOSFET from voltage spikes exceeding its 400 V breakdown rating without needing an external flyback diode.
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7800 | $1.78 |
| 25+ | $1.4900 | $37.25 |
| 100+ | $1.3500 | $135.00 |
| 500+ | $1.3200 | $660.00 |
| 750+ | $1.3100 | $982.50 |
| 1000+ | $1.1200 | $1120.00 |
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