TP2540N3-G Microchip MOSFET (P-Channel) (Other) In Stock
Microchip TP2540N3-G is a P-channel MOSFET with 400 V breakdown voltage, 30 Ω max drain-source on resistance, 86 mA drain current, and a built-in body diode in TO-92-3 package. From $0.80 in stock, worldwide shipping.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TP2540N3-G Datasheet PDF
- Category
- MOSFET (P-Channel)
- Price
- From $1.1200(MOQ 1)
- Temp Range
- -55.0°C to 150.0°C
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TP2540N3-G?
- 400 V minimum drain-source breakdown voltage for high-voltage analog switching and line protection
- Low-threshold gate drive enabling control from 3.3 V or 5 V logic with minimal external components
- Built-in body diode for inductive load protection in relay driver and motor switch circuits
- 30 Ω max Rds(on) and 25 pF max Crss for low switching loss at 86 mA drain current
- Through-hole TO-92-3 package for prototype-friendly assembly and easy hand-soldering in service equipment
What is TP2540N3-G used for?
The TP2540N3-G is used in high-voltage analog signal switching, relay driver circuits, and load switching applications where a P-channel device with a 400 V rating and low gate threshold is required. Its TO-92-3 through-hole package makes it popular in service tools, power supply protection circuits, and legacy industrial equipment where through-hole components are preferred for rework. It is also employed in AC phase control and lamp dimmer circuits operating from rectified mains voltages up to 400 V.
What are the specifications of TP2540N3-G?
| Manufacturer Package Code | TO-92-3 |
| Factory Lead Time | 7Weeks |
| YTEOL | 9 |
| Additional Feature | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 400V |
| Drain Current-Max (ID) | 0.086A |
| Drain-source On Resistance-Max | 30Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 25pF |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation Ambient-Max | 0.74W |
| Power Dissipation-Max (Abs) | 0.74W |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| ## TP2540N3-G Alternates Showing results | Image |
| Package | Other |
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
| ECCN | EAR99 |
| HTS Code | 8541.29.00.95 |
| Country of Origin | Philippines |
Where can I find the TP2540N3-G datasheet?
TP2540N3-G Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TP2540N3-G?
Compatible alternatives and drop-in replacements for TP2540N3-G:
Frequently Asked Questions
What drain-source breakdown voltage does the TP2540N3-G support, and what supply rails does that cover?
The TP2540N3-G is rated for a minimum 400 V drain-source breakdown voltage, which comfortably covers rectified 230 V AC mains (peak approximately 325 V) with margin. This makes it suitable for high-voltage load switching, relay drivers, and line protection circuits in mains-powered consumer and industrial equipment.
How does the TP2540N3-G's low-threshold gate characteristic benefit circuits controlled by 5 V logic?
The TP2540N3-G features a low gate threshold, allowing it to turn on fully with gate drive voltages compatible with 5 V CMOS or TTL logic outputs. This eliminates the need for additional level-shifting or boosted gate drive circuitry, simplifying the control interface in microcontroller-driven high-voltage switching designs and reducing external component count.
What is the maximum drain current and on-resistance of the TP2540N3-G, and what does that imply for load current capacity?
The TP2540N3-G handles up to 86 mA of drain current with a maximum Rds(on) of 30 Ω. At full load current this produces approximately 2.6 V of conduction drop, so it is best suited for low-current switching tasks such as small relay coils, indicator LEDs, and signal-level analog switches rather than high-current power loads.
Does the TP2540N3-G include a built-in body diode, and why is that important for inductive loads?
Yes, the TP2540N3-G includes a built-in body diode as part of its single MOSFET configuration. When switching inductive loads such as relay coils or small motor windings, the body diode provides a free-wheeling path for the inductive kickback energy when the device turns off, protecting the MOSFET from voltage spikes exceeding its 400 V breakdown rating without needing an external flyback diode.
Related Guides
CSD87313DMS Synchronous Buck Power Stage Design Guide
Design a compact CSD87313DMS synchronous buck stage with practical guidance for loss, gate drive, PCB layout, EMI, thermal validation, and sourcing.
Aug 6, 2026
STEF05SGR eFuse Selection Guide for 5 V Overcurrent Protection
Choose STEF05SGR for 5 V overcurrent protection by checking current-limit margin, inrush, thermal loss, fault response, and sourcing.
Aug 6, 2026
C0402C103K3RACTU Selection Guide: Choosing a 10 nF 0402 MLCC
Select C0402C103K3RACTU by voltage margin, X7R behavior, tolerance, 0402 assembly risk, and qualified alternatives.
Aug 4, 2026
STM32H753VIT6 MCU Selection Guide: Memory, Package, Connectivity, and Security
Choose STM32H753VIT6 by evaluating memory architecture, LQFP-100 pin fit, connectivity, security, power, and sourcing tradeoffs.
Aug 4, 2026
Why Buy from FindMyChip
About Microchip
Microchip is a leading electronic component manufacturer. FindMyChip sources Microchip ICs directly from authorized China distributors, offering competitive pricing and reliable stock.
More from Microchip
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7800 | $1.78 |
| 25+ | $1.4900 | $37.25 |
| 100+ | $1.3500 | $135.00 |
| 500+ | $1.3200 | $660.00 |
| 750+ | $1.3100 | $982.50 |
| 1000+ | $1.1200 | $1120.00 |
In Stock · 24h Response · Worldwide Shipping
Response within 24 hours · Worldwide shipping
“Response time is incredible — usually under 4 hours. They understand that production lines can't wait.”
You May Also Like
SPD15P10P G
Infineon
MOSFET (P-Channel)
AO3407A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
SI5403DC-T1-GE3
Vishay
MOSFET (P-Channel)
BSL303SPEH6327XTSA1
Infineon
MOSFET (P-Channel)
SIA427DJ-T1-GE3
Vishay
MOSFET (P-Channel)
SiSS71DN-T1-GE3
Vishay
MOSFET (P-Channel)
SIS407ADN-T1-GE3
Vishay
MOSFET (P-Channel)
SI7157DP-T1-GE3
Vishay
MOSFET (P-Channel)
BSO201SPHXUMA1
Infineon
MOSFET (P-Channel)
AOD4189
Alpha & Omega Semiconductors
MOSFET (P-Channel)
AOD417
Alpha & Omega Semiconductors
MOSFET (P-Channel)
IPD50P04P4L11ATMA1
Infineon
MOSFET (P-Channel)
AO3401A
Alpha & Omega Semiconductors
MOSFET (P-Channel)
RQ5L015SPTL
ROHM Semiconductor
MOSFET (P-Channel)
DMP3130LQ-7
Diodes Inc.
MOSFET (P-Channel)
BUZ906P
Magnatec
MOSFET (P-Channel)
ZXM61P02FTA
Diodes Inc.
MOSFET (P-Channel)
ZVP3310FTA
Diodes Inc.
MOSFET (P-Channel)
SPP80P06PHXKSA1
Infineon
MOSFET (P-Channel)
BSP171P
Infineon
MOSFET (P-Channel)
SQ2319ADS-T1_GE3
Vishay
MOSFET (P-Channel)
SI7101DN-T1-GE3
Vishay
MOSFET (P-Channel)
IPB80P04P4L08ATMA1
Infineon
MOSFET (P-Channel)
TPCA8108(TE12L,Q)
Toshiba
MOSFET (P-Channel)