TP2104N3 Microchip MOSFET (P-Channel) (Other) In Stock
The TP2104N3 is a P-channel MOSFET from Microchip rated at 40 V drain-source voltage with 6 ohm on-state resistance for efficient low-side and high-side switching applications. It is suitable for load switching, battery protection, and power management circuits requiring a reliable P-channel device. Available in a compact through-hole or surface-mount package for versatile PCB integration.
- Manufacturer
- Microchip
- Package
- Other
- Pin Count
- 3
- Lifecycle
- ACTIVE
- Datasheet
- TP2104N3 Datasheet PDF
- Category
- MOSFET (P-Channel)
- RoHS
- Compliant
- Lead Time
- 3–7 business days
- Shipping
- DHL Express · Worldwide
What are the key features of TP2104N3?
- P-channel MOSFET with 40 V VDS rating and 6 ohm RDS(on) for robust load switching and battery protection designs
- Low gate threshold enabling drive from 3.3 V or 5 V logic-level signals in low-power embedded switching circuits
- Compact package with suitable current handling for power management and reverse-polarity protection applications
What is TP2104N3 used for?
The TP2104N3 is well-suited for battery management, load switching, and reverse-polarity protection circuits in portable electronics, IoT devices, and embedded power supply designs. Its 40 V drain-source rating accommodates a wide range of power supply voltages, making it useful in automotive accessories, industrial sensors, and consumer electronics power control. The P-channel topology simplifies high-side switch implementations that need minimal gate drive circuitry.
Compliance & Regulatory
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-Free) |
Where can I find the TP2104N3 datasheet?
TP2104N3 Datasheet DownloadOfficial datasheet from Microchip
What are equivalent replacements for TP2104N3?
Compatible alternatives and drop-in replacements for TP2104N3:
Frequently Asked Questions
What is the drain-source voltage rating and on-resistance of the TP2104N3 P-channel MOSFET?
The TP2104N3 has a 40 V drain-source voltage rating and 6 ohm RDS(on), providing adequate breakdown protection and moderate conduction losses for load switching in battery-powered and low-voltage embedded system applications.
In which circuit topologies does the P-channel TP2104N3 simplify implementation compared to N-channel alternatives?
The TP2104N3 simplifies high-side switch designs at supply voltages up to 40 V because P-channel MOSFETs turn on when the gate is pulled low relative to the source, eliminating the need for a charge pump or bootstrap circuit required by N-channel high-side switches.
What are typical applications for the TP2104N3 in battery-powered portable designs?
Typical applications include battery reverse-polarity protection, load switching, power multiplexing, and soft-start circuits in portable electronics and IoT nodes where the 40 V 6 ohm P-channel MOSFET controls supply rails up to several amperes.
Can TP2104N3 be driven directly from 3.3 V or 5 V microcontroller GPIO outputs?
Yes, the TP2104N3 is designed with a low gate threshold voltage that allows direct drive from 3.3 V or 5 V logic-level GPIO outputs, enabling microcontroller-controlled switching of 40 V load lines without additional level-shift circuitry.
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